2SD635 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD635
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8000
Noise Figure, dB: -
Package: TO220
2SD635 Transistor Equivalent Substitute - Cross-Reference Search
2SD635 Datasheet (PDF)
2sd635.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD635DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB675Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p
2sd633 2sd635.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION With TO-220C package Complement to type 2SB673/675 DARLINGTON High DC current gain Low saturation voltage APPLICATIONS High power switching Hammer drive,pulse motor drive PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emit
2sd639.pdf
Transistor2SD638, 2SD639Silicon NPN epitaxial planer typeFor medium-power general amplificationUnit: mmComplementary to 2SB643 and 2SB6446.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute
2sd636 2sd637.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
2sd637 e.pdf
Transistor2SD637Silicon NPN epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45
2sd637.pdf
Transistor2SD637Silicon NPN epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45
2sd638 e.pdf
Transistor2SD638, 2SD639Silicon NPN epitaxial planer typeFor medium-power general amplificationUnit: mmComplementary to 2SB643 and 2SB6446.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute
2sd632.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD632DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Excellent Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers appl
2sd633.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD633DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB673Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p
2sd634.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD634DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB674Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
