2SD669 datasheet и подбор замены

 ..1. Size:439K  utc
 2sd669 2sd669a.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R SOT-223 B C E Tape Reel 2SD669xL-x-AB3-R 2SD669xG-

 ..2. Size:32K  hitachi
 2sd669.pdf 

2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCE

 ..3. Size:110K  jiangsu
 2sd669 2sd669a.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 TO- 126C 2SD669A TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier Complementary Pair with 2SB649/A 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector- Base Voltage 180 V VCEO Collector-E

 ..4. Size:245K  wietron
 2sd669.pdf 

2SD669/2SD669A NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol 2SD669 2SD669A Unit VCBO 180 180 V Collector-Emitter Voltage VCEO 120 160 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 V Collector Current IC 1.5 A PD 1.0 W Power Disspation Tj 150 C Junction T

 ..5. Size:1131K  blue-rocket-elect
 2sd669 2sd669a.pdf 

2SD669(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(A) Complementary pair with 2SB649(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P

 ..6. Size:280K  inchange semiconductor
 2sd669 2sd669a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION With TO-126 package Complement to type 2SB649/649A High breakdown voltage VCEO 120/160V High current 1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collect

 ..7. Size:209K  inchange semiconductor
 2sd669.pdf 

isc Silicon NPN Power Transistor 2SD669 DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RA

 0.1. Size:265K  mcc
 2sd669-b-c-d 2sd669a-b-c.pdf 

 0.2. Size:36K  hitachi
 2sd669a.pdf 

2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO

 0.3. Size:236K  secos
 2sd669-669a.pdf 

2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 2.7 0.2 7.6 0.2 FEATURES 1.3 0.2 4.0 0.1 Power dissipation 10.8 0.2 PCM 1mW Tamb=25 O3.1 0.1 Collector current 1 2 3 2.2 0.1 ICM 1.5 A 1.27 0.1 Collector-base voltage 15.5 0.2 V

 0.4. Size:247K  jiangsu
 2sd669al.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SD669AL TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 170 V VEBO Emitter-Base Volt

 0.5. Size:180K  lge
 2sd669-2sd669a to-126.pdf 

2SD669/2SD669A(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features 2.500 7.400 2.900 1.100 7.800 Low frequency power amplifier complementary pair 1.500 with 2SB649/A 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 0.000 0.300 Symbol Parameter Value Units11.000 VCBO Collector- Base Voltage 180 V 2.

 0.6. Size:665K  blue-rocket-elect
 2sd669ad.pdf 

2SD669AD Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features 2SB649AD Complementary pair with 2SB649AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni

 0.7. Size:473K  blue-rocket-elect
 2sd669a.pdf 

2SD669(A)(BR3DA669(A)QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF) Complementary pair with 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF). / Applications Low frequency power

 0.8. Size:163K  nell
 2sd669am-a.pdf 

RoHS RoHS 2SD669AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose NPN Power Transistor 1.5A / 120V, 160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SB649AM/2SB649AM-A NPN E All dimensions in millimeters

 0.9. Size:216K  inchange semiconductor
 2sd669a.pdf 

isc Silicon NPN Power Transistor 2SD669A DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM R