2SD687 - описание и поиск аналогов

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isc Silicon NPN Darlington Power Transistor 2SD687 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications.

isc Silicon NPN Darlington Power Transistor 2SD683 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High DC Current Gain- h = 500(Min.)@ I = 5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage and high power switching applications. Motor driver applications. ABSOLUTE MAXIMUM RATIN

isc Silicon NPN Darlington Power Transistor 2SD689 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Complement to Type 2SB679 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

isc Silicon NPN Darlington Power Transistor 2SD686 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Complement to Type 2SB676 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS