2SD687 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD687
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO220
2SD687 Transistor Equivalent Substitute - Cross-Reference Search
2SD687 Datasheet (PDF)
2sd687.pdf
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2sd687.pdf
isc Silicon NPN Darlington Power Transistor 2SD687DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications.
2sd683.pdf
isc Silicon NPN Darlington Power Transistor 2SD683DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High DC Current Gain-: h = 500(Min.)@ I = 5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage and high power switching applications.Motor driver applications.ABSOLUTE MAXIMUM RATIN
2sd684.pdf
isc Silicon NPN Darlington Power Transistor 2SD684DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain-: h = 1500(Min.)@I = 2AFE CLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applications.
2sd689.pdf
isc Silicon NPN Darlington Power Transistor 2SD689DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CComplement to Type 2SB679Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
2sd686.pdf
isc Silicon NPN Darlington Power Transistor 2SD686DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type 2SB676Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
