2SD711A. Аналоги и основные параметры
Наименование производителя: 2SD711A
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: TO3
Аналоги (замена) для 2SD711A
- подборⓘ биполярного транзистора по параметрам
2SD711A даташит
8.2. Size:184K inchange semiconductor
2sd711.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD711 DESCRIPTION High DC Current Gain Low Collector Saturation Voltage Excellent Safe Operating Area High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor controls Inverters choppers Switching regulators G
9.1. Size:106K utc
2sd718.pdf 
UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45 50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage
9.3. Size:89K wingshing
2sd716.pdf 
2SD716 SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 100 V Collector curre
9.4. Size:88K wingshing
2sd717.pdf 
Silicon Epitaxial Planar Transistor 2SD717 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 70 V CBO Collector-emitter voltage (open base) V - 70 V CEO Collector
9.6. Size:252K first silicon
2sd718 to3p.pdf 
SEMICONDUCTOR 2SD718 TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45 50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte
9.7. Size:195K cn sptech
2sd718r 2sd718o.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD718 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB688 APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
9.8. Size:196K cn sptech
2sd717o 2sd717y.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD717 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 6.0A CE(sat) C High Collector Power Dissipation P = 80W @T =25 C C APPLICATIONS High power switching applications DC-DC converter and DC-AC inverter application
9.9. Size:218K inchange semiconductor
2sd718.pdf 
isc Silicon NPN Power Transistor 2SD718 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB688 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applicati
9.10. Size:219K inchange semiconductor
2sd716.pdf 
isc Silicon NPN Power Transistor 2SD716 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V (Max)@I = 4A CE(sat) C Complement to Type 2SB686 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 30 35W high-fid
9.11. Size:218K inchange semiconductor
2sd717.pdf 
isc Silicon NPN Power Transistor 2SD717 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 6.0A CE(sat) C High Collector Power Dissipation P = 80W @T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applicat
9.12. Size:194K inchange semiconductor
2sd715.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD715 DESCRIPTION High DC Current Gain h = 2000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power am
Другие транзисторы: 2SD704, 2SD705, 2SD706, 2SD707, 2SD708, 2SD709, 2SD71, 2SD710, MJE340, 2SD712, 2SD712A, 2SD713, 2SD715, 2SD716, 2SD716O, 2SD716R, 2SD717
