2SD711A Specs and Replacement
Type Designator: 2SD711A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2SD711A datasheet
8.2. Size:184K inchange semiconductor
2sd711.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD711 DESCRIPTION High DC Current Gain Low Collector Saturation Voltage Excellent Safe Operating Area High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor controls Inverters choppers Switching regulators G... See More ⇒
9.1. Size:106K utc
2sd718.pdf
UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45 50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage... See More ⇒
9.3. Size:89K wingshing
2sd716.pdf
2SD716 SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 100 V Collector curre... See More ⇒
9.4. Size:88K wingshing
2sd717.pdf
Silicon Epitaxial Planar Transistor 2SD717 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 70 V CBO Collector-emitter voltage (open base) V - 70 V CEO Collector... See More ⇒
9.6. Size:252K first silicon
2sd718 to3p.pdf
SEMICONDUCTOR 2SD718 TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45 50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte... See More ⇒
9.7. Size:195K cn sptech
2sd718r 2sd718o.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD718 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB688 APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
9.8. Size:196K cn sptech
2sd717o 2sd717y.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD717 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 6.0A CE(sat) C High Collector Power Dissipation P = 80W @T =25 C C APPLICATIONS High power switching applications DC-DC converter and DC-AC inverter application... See More ⇒
9.9. Size:218K inchange semiconductor
2sd718.pdf
isc Silicon NPN Power Transistor 2SD718 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB688 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applicati... See More ⇒
9.10. Size:219K inchange semiconductor
2sd716.pdf
isc Silicon NPN Power Transistor 2SD716 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V (Max)@I = 4A CE(sat) C Complement to Type 2SB686 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 30 35W high-fid... See More ⇒
9.11. Size:218K inchange semiconductor
2sd717.pdf
isc Silicon NPN Power Transistor 2SD717 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 6.0A CE(sat) C High Collector Power Dissipation P = 80W @T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applicat... See More ⇒
9.12. Size:194K inchange semiconductor
2sd715.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD715 DESCRIPTION High DC Current Gain h = 2000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power am... See More ⇒
Detailed specifications: 2SD704, 2SD705, 2SD706, 2SD707, 2SD708, 2SD709, 2SD71, 2SD710, MJE340, 2SD712, 2SD712A, 2SD713, 2SD715, 2SD716, 2SD716O, 2SD716R, 2SD717
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