2SD74. Аналоги и основные параметры
Наименование производителя: 2SD74
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 90 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO3
Аналоги (замена) для 2SD74
- подборⓘ биполярного транзистора по параметрам
2SD74 даташит
..1. Size:194K inchange semiconductor
2sd74.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD74 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching ap
0.5. Size:152K inchange semiconductor
2sd748 2sd748a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD748 2SD748A DESCRIPTION With TO-3 package High VCBO High power dissipation APPLICATIONS Low frequency power amplifier regulator for TV power supply applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum
0.6. Size:125K inchange semiconductor
2sd743 2sd743a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A DESCRIPTION With TO-220C package Complement to type 2SB703/703A APPLICATIONS Designed for use in audio frequency power amplifier ,low speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s
0.7. Size:214K inchange semiconductor
2sd743.pdf 
isc Silicon NPN Power Transistor 2SD743 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 40 200 @I = 0.5A FE C Complement to Type 2SB703 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier, low speed switching applications. ABSOLUT
0.8. Size:202K inchange semiconductor
2sd748.pdf 
isc Silicon NPN Power Transistor 2SD748 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier. Regulator for TV power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Bas
0.9. Size:218K inchange semiconductor
2sd745.pdf 
isc Silicon NPN Power Transistor 2SD745 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Complement to Type 2SB705 High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications Suitable for output stages of 60 120 watts audio amplifier and vol
0.10. Size:179K inchange semiconductor
2sd745 2sd745a 2sd745b.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD745/745A/745B DESCRIPTION With MT-200 package Complement to type 2SB705/705A/705B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60 120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting b
Другие транзисторы: 2SD734F, 2SD734G, 2SD735, 2SD736, 2SD737, 2SD738, 2SD738A, 2SD73Y, MPSA42, 2SD741, 2SD743, 2SD743A, 2SD745, 2SD745A, 2SD745B, 2SD746, 2SD746A
