2SD74 PDF and Equivalents Search

 ..1. Size:194K  inchange semiconductor

 2sd74.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD74 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching ap... See More ⇒

 0.1. Size:174K  mospec

 2sd743 2sb703.pdf

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 0.2. Size:101K  no

 2sd746.pdf

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 0.3. Size:30K  no

 2sd748.pdf

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 0.4. Size:36K  no

 2sd741.pdf

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 0.5. Size:152K  inchange semiconductor

 2sd748 2sd748a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD748 2SD748A DESCRIPTION With TO-3 package High VCBO High power dissipation APPLICATIONS Low frequency power amplifier regulator for TV power supply applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ... See More ⇒

 0.6. Size:125K  inchange semiconductor

 2sd743 2sd743a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD743 2SD743A DESCRIPTION With TO-220C package Complement to type 2SB703/703A APPLICATIONS Designed for use in audio frequency power amplifier ,low speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s... See More ⇒

 0.7. Size:214K  inchange semiconductor

 2sd743.pdf

isc Silicon NPN Power Transistor 2SD743 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 40 200 @I = 0.5A FE C Complement to Type 2SB703 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier, low speed switching applications. ABSOLUT... See More ⇒

 0.8. Size:202K  inchange semiconductor

 2sd748.pdf

isc Silicon NPN Power Transistor 2SD748 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier. Regulator for TV power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Bas... See More ⇒

 0.9. Size:218K  inchange semiconductor

 2sd745.pdf

isc Silicon NPN Power Transistor 2SD745 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Complement to Type 2SB705 High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications Suitable for output stages of 60 120 watts audio amplifier and vol... See More ⇒

 0.10. Size:179K  inchange semiconductor

 2sd745 2sd745a 2sd745b.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD745/745A/745B DESCRIPTION With MT-200 package Complement to type 2SB705/705A/705B APPLICATIONS Audio frequency power amplifier Suitable for output stages of 60 120W audio amplifiers and voltage regulators PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting b... See More ⇒