Биполярный транзистор 2SD768K - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD768K
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора: TO220AB
2SD768K Datasheet (PDF)
2sd768.pdf
2SD768(K)Silicon NPN EpitaxialApplicationMedium speed and power switching complementary pair with 2SB727(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 3 k 200 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO
2sd768.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD768DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type 2SB727Minimum Lot-to-Lot variations for robust deviceperformance and reliable
2sd762 2sd762a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD762 2SD762A DESCRIPTION With TO-220C package Wide area of safe operation APPLICATIONS For audio freuqency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VAL
2sd764.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD764DESCRIPTIONWith TO-3 PackageHigh Voltage CapabilityLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
2sd762.pdf
isc Silicon NPN Power Transistor 2SD762DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max.) @I = 2.0ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIM
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050