2SD768K Datasheet PDF and Equivalents Search

 8.1. Size:36K  hitachi

 2sd768.pdf

2SD768(K) Silicon NPN Epitaxial Application Medium speed and power switching complementary pair with 2SB727(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 3 k 200 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO... See More ⇒

 8.2. Size:206K  inchange semiconductor

 2sd768.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD768 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Complement to Type 2SB727 Minimum Lot-to-Lot variations for robust device performance and reliable ... See More ⇒

 9.1. Size:22K  no

 2sd761.pdf

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 9.2. Size:39K  no

 2sd762.pdf

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 9.3. Size:90K  inchange semiconductor

 2sd762 2sd762a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD762 2SD762A DESCRIPTION With TO-220C package Wide area of safe operation APPLICATIONS For audio freuqency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VAL... See More ⇒

 9.4. Size:179K  inchange semiconductor

 2sd764.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD764 DESCRIPTION With TO-3 Package High Voltage Capability Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

 9.5. Size:212K  inchange semiconductor

 2sd762.pdf

isc Silicon NPN Power Transistor 2SD762 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max.) @I = 2.0A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIM... See More ⇒