2SD795A datasheet и подбор замены

 8.1. Size:42K  no
 2sd795.pdf 

 8.2. Size:214K  inchange semiconductor
 2sd795.pdf 

isc Silicon NPN Power Transistor 2SD795 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.7V(Max) @I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUT

 9.1. Size:125K  toshiba
 2sd797.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:258K  toshiba
 2sd799.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:157K  nec
 2sd794.pdf 

 9.4. Size:131K  mospec
 2sd798.pdf 

A A A

 9.5. Size:81K  jmnic
 2sd799.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD799 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS Igniter applications High voltage switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum rating

 9.6. Size:76K  jmnic
 2sd798.pdf 

Product Specification www.jmnic.com Silicon Power Transistors 2SD798 DESCRIPTION DARLINGTON High voltage With TO-220 package APPLICATIONS With switching and igniter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 emitter Fig.1 simplified outline (TO-220) and symbol LIMITING VALUES SYMBOL PARAMETER CONDITIONS MAX UNIT VCB

 9.7. Size:324K  lge
 2sd794-2sd794a.pdf 

2SD794/2SD794A TO-126C Transistor (NPN) TO-126C 1. EMITTER 2. COLLECTOR 1 2 3 3. BASE Features High voltage and Large current capacity Complementary to 2SB744,2SB744A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V 3.000 7.800 3.400 8.200 1.800 Collector-Emitter Voltage 2SD794 45 2.200 VCEO V 4.040

 9.8. Size:182K  cn sptech
 2sd797.pdf 

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD797 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO High Power Dissipation High Current Capability APPLICATIONS High power amplifier applications. High Power switching applications. DC-DC converter applications. Regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 9.9. Size:204K  inchange semiconductor
 2sd797.pdf 

isc Silicon NPN Power Transistor 2SD797 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO High Power Dissipation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High Power switching applications. DC-DC converter applications. Regulator ap

 9.10. Size:210K  inchange semiconductor
 2sd799.pdf 

isc Silicon NPN Darlington Power Transistor 2SD799 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min.) (BR)CEO High DC Current Gain h = 600(Min.) @I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications. High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 9.11. Size:212K  inchange semiconductor
 2sd798.pdf 

isc Silicon NPN Darlington Power Transistor 2SD798 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1500(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

 9.12. Size:214K  inchange semiconductor
 2sd794.pdf 

isc Silicon NPN Power Transistor 2SD794 DESCRIPTION High Collector Current -I = 3A C Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO Complement to Type 2SB744 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.13. Size:202K  inchange semiconductor
 2sd792.pdf 

isc Silicon NPN Power Transistor 2SD792 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V

 9.14. Size:187K  inchange semiconductor
 2sd793.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD793 DESCRIPTION Collector-Emitter BreakdownVoltage- V = 30V(Min.) (BR)CEO Low Collector to Emitter Saturation Voltage V = 2.0V(Max.)@I = 1.5A CE(sat) C Excellent h linearity FE Complement to Type 2SB743 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

 9.15. Size:148K  inchange semiconductor
 2sd794-a 2sd794 2sd794a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD794 2SD794A DESCRIPTION With TO-126 package Complement to type 2SB744/744A High current 3A Excellent hFE linearity APPLICATIONS For use in audio frequency amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas