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2SD795A Specs and Replacement

Type Designator: 2SD795A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 155 °C

Electrical Characteristics

Transition Frequency (ft): 95 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 165

Noise Figure, dB: -

Package: TO220

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2SD795A datasheet

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 8.2. Size:214K  inchange semiconductor

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2SD795A

isc Silicon NPN Power Transistor 2SD795 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.7V(Max) @I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUT... See More ⇒

 9.1. Size:125K  toshiba

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2SD795A

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 9.2. Size:258K  toshiba

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2SD795A

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Detailed specifications: 2SD794A, 2SD794AO, 2SD794AR, 2SD794AY, 2SD794O, 2SD794R, 2SD794Y, 2SD795, 2SD669A, 2SD796, 2SD797, 2SD798, 2SD799, 2SD80, 2SD800, 2SD801, 2SD802

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