MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB3N120E/DDesigner's Data SheetMTB3N120ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 3.0 AMPERES 1200 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 5.0 OHMthan any existing surface

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N120E/DDesigner's Data SheetMTP3N120ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highvoltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.1200 VOLTS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB3N120E/DDesigner's Data SheetMTB3N120ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 3.0 AMPERES 1200 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 5.0 OHMthan any existing surface

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N120E/DDesigner's Data SheetMTP3N120ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highvoltage TMOS EFET is designed to3.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.1200 VOLTS

IGA03N120H2HighSpeed 2-Technology C Designed for: - TV Horizontal Line Deflection GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control

IKA03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - TV Horizontal Line Deflection GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-TO2

IKB03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for frequency inverters for washingmachines, fans, pumps and vacuum cleanersGE 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuits- temperature stable behavior- parallel switching capability- tight parame

IGA03N120H2HighSpeed 2-Technology C Designed for: - TV Horizontal Line Deflection GE 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control

IKP03N120H2IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for:- SMPS- Lamp BallastGE- ZVS-Converter 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuitsPG-TO-247-3- temperature stable behavior- parallel switching capability- tight parameter dis

IGP03N120H2 IGW03N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

IGB03N120H2 HighSpeed 2-Technology C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G E 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qual

IGP03N120H2 IGW03N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

IKP03N120H2IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for:- SMPS- Lamp BallastGE- ZVS-Converter 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuitsPG-TO-247-3- temperature stable behavior- parallel switching capability- tight parameter dis

IKP03N120H2 IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimize

IKA03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for:- TV Horizontal Line DeflectionGE 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuits- temperature stable behavior- parallel switching capability- tight parameter distributionPG-TO220-3-31PG-T

IGP03N120H2 IGW03N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

IGB03N120H2 HighSpeed 2-Technology C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G E 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qual

IGP03N120H2 IGW03N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

High VoltageVDSS = 1200 VIXTH 3N120Power MOSFETsID25 = 3 AN-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 150C 3N120 1200 V3N110 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 3N120 1200 V3N110 1100 VVGS Continuous 20 VG D (TAB)DVGSM Transient 30 V

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

IXFA 3N120 VDSS =1200 VHiPerFETTMIXFP 3N120 ID25 = 3 APower MOSFETsRDS(on) = 4.5 trr 300 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220 (IXFP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VD (TAB)VGS Conti

High Voltage VDSS = 1200VIXTA3N120HVID25 = 3APower MOSFET RDS(on) 4.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 V D (Tab)VGSS Continuous 20 VVGSM Transient 30 VG = Gate D

High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous

MTP3N120EDesigners Data SheetTMOS E-FET.Power Field EffectTransistorN-Channel Enhancement-Mode Siliconhttp://onsemi.comGateThis advanced high-voltage TMOS E-FET is designed to withstandhigh energy in the avalanche mode and switch efficiently. This newhigh energy device also offers a drain-to-source diode with fastTO-220ABrecovery time. Designed for high voltage, hi

JFFM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

JFQM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

WMJ3N120D1 WMO3N120D11200V 3A 6.3 N-ch Power MOSFETDescriptionTO-247TO-252WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.DGGDSSFeatures Typ.R =6.3@V =10VDS(on) GS

HM3N120FGeneral Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

HM3N120AGeneral Description VDSS 1200 V HM3N120A ANR, the silicon N-channel Enhanced ID 3 A RDS(ON)Typ 5.1 VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effi