3N120 Specs and Replacement
Type Designator: 3N120
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 10 pF
Noise Figure, dB: -
Package: TO72
- BJT ⓘ Cross-Reference Search
3N120 datasheet
0.1. Size:322K motorola
mtb3n120erev1x.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB3N120E/D Designer's Data Sheet MTB3N120E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 3.0 AMPERES 1200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 5.0 OHM than any existing surface... See More ⇒
0.2. Size:217K motorola
mtp3n120e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS ... See More ⇒
0.3. Size:277K motorola
mtb3n120e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB3N120E/D Designer's Data Sheet MTB3N120E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 3.0 AMPERES 1200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 5.0 OHM than any existing surface... See More ⇒
0.4. Size:252K motorola
mtp3n120e-.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS ... See More ⇒
0.5. Size:614K infineon
iga03n120h2.pdf
IGA03N120H2 HighSpeed 2-Technology C Designed for - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control... See More ⇒
0.6. Size:767K infineon
ika03n120h2g.pdf
IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-TO2... See More ⇒
0.7. Size:650K infineon
ikb03n120h2.pdf
IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parame... See More ⇒
0.8. Size:614K infineon
iga03n120h2g.pdf
IGA03N120H2 HighSpeed 2-Technology C Designed for - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control... See More ⇒
0.9. Size:752K infineon
ikp03n120h2.pdf
IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis... See More ⇒
0.10. Size:341K infineon
igp03n120h2.pdf
IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis... See More ⇒
0.11. Size:1153K infineon
igb03n120h2 rev2 4g.pdf
IGB03N120H2 HighSpeed 2-Technology C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qual... See More ⇒
0.12. Size:336K infineon
igp03n120h2 igw03n120h2.pdf
IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis... See More ⇒
0.13. Size:752K infineon
ikw03n120h2.pdf
IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis... See More ⇒
0.14. Size:375K infineon
ikp03n120h2 ikw03n120h2 rev2 5g.pdf
IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis... See More ⇒
0.15. Size:405K infineon
ikb03n120h2 .pdf
IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimize... See More ⇒
0.16. Size:500K infineon
ika03n120h2.pdf
IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Designed for - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-T... See More ⇒
0.17. Size:341K infineon
igw03n120h2.pdf
IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis... See More ⇒
0.18. Size:1153K infineon
igb03n120h2.pdf
IGB03N120H2 HighSpeed 2-Technology C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G E 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qual... See More ⇒
0.19. Size:341K infineon
igp03n120h2 igw03n120h2 rev2 6.pdf
IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis... See More ⇒
0.20. Size:131K ixys
ixth3n120.pdf
High Voltage VDSS = 1200 V IXTH 3N120 Power MOSFETs ID25 = 3 A N-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 150 C 3N120 1200 V 3N110 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 3N120 1200 V 3N110 1100 V VGS Continuous 20 V G D (TAB) D VGSM Transient 30 V... See More ⇒
0.21. Size:562K ixys
ixta3n120 ixtp3n120.pdf
VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC = ... See More ⇒
0.22. Size:560K ixys
ixta3n120trl.pdf
VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC = ... See More ⇒
0.23. Size:565K ixys
ixfa3n120 ixfp3n120.pdf
IXFA 3N120 VDSS =1200 V HiPerFETTM IXFP 3N120 ID25 = 3 A Power MOSFETs RDS(on) = 4.5 trr 300 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V D (TAB) VGS Conti... See More ⇒
0.24. Size:138K ixys
ixta3n120hv.pdf
High Voltage VDSS = 1200V IXTA3N120HV ID25 = 3A Power MOSFET RDS(on) 4.5 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V D (Tab) VGSS Continuous 20 V VGSM Transient 30 V G = Gate D ... See More ⇒
0.25. Size:175K ixys
ixta3n120 ixtp3n120 ixth3n120.pdf
High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous... See More ⇒
0.26. Size:176K onsemi
mtp3n120e.pdf
MTP3N120E Designer s Data Sheet TMOS E-FET. Power Field Effect Transistor N-Channel Enhancement-Mode Silicon http //onsemi.com Gate This advanced high-voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast TO-220AB recovery time. Designed for high voltage, hi... See More ⇒
0.27. Size:943K jiaensemi
jffm3n120e.pdf
JFFM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒
0.28. Size:818K jiaensemi
jfqm3n120e.pdf
JFQM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒
0.30. Size:425K cn hmsemi
hm3n120f.pdf
HM3N120F General Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio... See More ⇒
0.31. Size:610K cn hmsemi
hm3n120a.pdf
HM3N120A General Description VDSS 1200 V HM3N120A ANR, the silicon N-channel Enhanced ID 3 A RDS(ON)Typ 5.1 VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effi... See More ⇒
Detailed specifications: 3N112
, 3N113
, 3N114
, 3N115
, 3N116
, 3N117
, 3N118
, 3N119
, 2SC2240
, 3N121
, 3N123
, 3N127
, 3N129
, 3N130
, 3N131
, 3N132
, 3N133
.
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