All Transistors. 3N120 Datasheet

 

3N120 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3N120

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 10 pF

Noise Figure, dB: -

Package: TO72

3N120 Transistor Equivalent Substitute - Cross-Reference Search

 

3N120 Datasheet (PDF)

1.1. mtb3n120erev1x.pdf Size:322K _motorola

3N120
3N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB3N120E/D Designer's? Data Sheet MTB3N120E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 3.0 AMPERES 1200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 5.0 OHM than any existing surface mount pack

1.2. mtp3n120e.pdf Size:217K _motorola

3N120
3N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced highvoltage TMOS EFET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS This new hig

 1.3. mtb3n120e.pdf Size:277K _motorola

3N120
3N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB3N120E/D Designer's? Data Sheet MTB3N120E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 3.0 AMPERES 1200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 5.0 OHM than any existing surface mount pack

1.4. mtp3n120e-.pdf Size:252K _motorola

3N120
3N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced highvoltage TMOS EFET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS This new hig

 1.5. ikp03n120h2 ikw03n120h2 rev2 5g.pdf Size:375K _infineon

3N120
3N120

IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter distributi

1.6. ikb03n120h2 rev2 3.pdf Size:405K _infineon

3N120
3N120

IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for I

1.7. igp03n120h2 igw03n120h2 rev2 6.pdf Size:341K _infineon

3N120
3N120

IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter distributi

1.8. ika03n120h2 rev2 2g.pdf Size:767K _infineon

3N120
3N120

IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-TO220-3-34

1.9. igb03n120h2 rev2 4g.pdf Size:1153K _infineon

3N120
3N120

IGB03N120H2 HighSpeed 2-Technology C Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G E 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qualified acc

1.10. iga03n120h2 rev2 2g.pdf Size:614K _infineon

3N120
3N120

IGA03N120H2 HighSpeed 2-Technology C Designed for: - TV Horizontal Line Deflection G E 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control PG-TO2

1.11. ixth3n120.pdf Size:131K _ixys

3N120
3N120

High Voltage VDSS = 1200 V IXTH 3N120 Power MOSFETs ID25 = 3 A N-Channel Enhancement Mode VDS(on) = 4.5 ? Avalanche Rated, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25C to 150C 3N120 1200 V 3N110 1100 V VDGR TJ = 25C to 150C; RGS = 1 M? 3N120 1200 V 3N110 1100 V VGS Continuous 20 V G D (TAB) D VGSM Transient 30 V S ID25 TC

1.12. ixta3n120trl.pdf Size:560K _ixys

3N120
3N120

VDSS ID25 RDS(on) High Voltage IXTA 3N120 Ω Ω Ω Ω Power MOSFETs 1200 V 3 A 4.5 Ω IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V D (TAB) G VGSM Transient ±30 V D S ID25 TC = 25°C3 A IDM TC =

1.13. ixta3n120hv.pdf Size:138K _ixys

3N120
3N120

High Voltage VDSS = 1200V IXTA3N120HV ID25 = 3A Power MOSFET   RDS(on)  4.5       N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V D (Tab) VGSS Continuous 20 V VGSM Transient 30 V G = Gate D

1.14. ixfa3n120 ixfp3n120.pdf Size:565K _ixys

3N120
3N120

IXFA 3N120 VDSS =1200 V HiPerFETTM IXFP 3N120 ID25 = 3 A Power MOSFETs ? RDS(on) = 4.5 ? ? ? ? ? ? trr ? 300 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V D (TAB) VGS Continuous 20 V G D VGSM Trans

1.15. ixta3n120 ixtp3n120.pdf Size:562K _ixys

3N120
3N120

VDSS ID25 RDS(on) High Voltage IXTA 3N120 ? ? ? ? Power MOSFETs 1200 V 3 A 4.5 ? IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C3 A IDM TC = 25C, pulse width limi

1.16. iga03n120h2.pdf Size:612K _igbt_a

3N120
3N120

 IGA03N120H2 HighSpeed 2-Technology C • Designed for: - TV – Horizontal Line Deflection G E • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A PG-TO220-3-34 (FullPAK) - simple Gate-Control

1.17. igw03n120h2.pdf Size:341K _igbt_a

3N120
3N120

 IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • Designed for: - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

1.18. ikp03n120h2.pdf Size:752K _igbt_a

3N120
3N120

IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Designed for: - SMPS - Lamp Ballast G E - ZVS-Converter  2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

1.19. ika03n120h2.pdf Size:500K _igbt_a

3N120
3N120

IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Designed for: - TV – Horizontal Line Deflection G E  2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution PG-TO220-3-31 PG-T

1.20. ikw03n120h2.pdf Size:752K _igbt_a

3N120
3N120

IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Designed for: - SMPS - Lamp Ballast G E - ZVS-Converter  2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

1.21. igp03n120h2.pdf Size:341K _igbt_a

3N120
3N120

 IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C • Designed for: - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

1.22. ikb03n120h2.pdf Size:650K _igbt_a

3N120
3N120

IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G E  2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parame

1.23. igb03n120h2.pdf Size:1148K _igbt_a

3N120
3N120

 IGB03N120H2 HighSpeed 2-Technology C • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G E • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A • Qual

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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