3N65 - Даташиты. Аналоги. Основные параметры

UNISONIC TECHNOLOGIES CO., LTD 3N65 Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicati

STL13N65M2 N-channel 650 V, 0.365 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS RDS(on) max ID STL13N65M2 650 V 0.475 6.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 1 2 3 100% avalanche tested 4 Zener-protected PowerFLAT 5x6 HV Applications S

STW63N65DM2 N-channel 650 V, 0.042 typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW63N65DM2 650 V 0.05 60 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extreme

STD13N65M2 N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID TAB STD13N65M2 650 V 0.43 10 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Figure 1. I

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 typ., 24 A MDmesh M2 Power MOSFETs in D PAK, TO-220FP, TO-220 and I PAK packages Datasheet - production data Features TAB TAB RDS(on) Order codes VDS max ID STB33N65M2 3 3 1 2 1 STF33N65M2 TO-220FP D2PAK 650 V 0.14 24 A STP33N65M2 TAB TAB STI33N65M2 Extremely low gate charge Exce

STP13N65M2, STU13N65M2 N-channel 650 V, 0.37 typ.,10 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features RDS(on) Order code VDS ID max TAB STP13N65M2 TAB 650 V 0.43 10A STU13N65M2 3 2 1 3 2 Extremely low gate charge 1 TO-220 Excellent output capacitance (Coss) profile IPAK 100% avalanche tested Zener-pr

www.onsemi.com FCH023N65S3 N-Channel SuperFET III MOSFET 650 V, 75 A, 23 m Features Description 700 V @ TJ = 150 C SuperFET III MOSFET is ON Semiconductor s brand- new high voltage super-junction (SJ) MOSFET family that is uti- Typ. RDS(on) = 19.5 m lizing charge balance technology for outstanding low on-resis- Ultra Low Gate Charge (Typ. Qg = 222 nC) tance and

NTHL033N65S3HF MOSFET Power, N Channel, SUPERFET III, FRFET www.onsemi.com 650 V, 70 A, 33 mW Description VDSS RDS(ON) MAX ID MAX SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge 650 V 33 mW @ 10 V 70 A balance technology for outstanding low on-resistance and lower gate charge performance. This advanc

UNISONIC TECHNOLOGIES CO., LTD 3N65Z Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N65Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switchi

UNISONIC TECHNOLOGIES CO., LTD 3N65A Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching appli

UNISONIC TECHNOLOGIES CO., LTD 3N65K Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65K is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicati

Spec. No. C798FP Issued Date 2010.03.12 CYStech Electronics Corp. Revised Date 2011.03.30 Page No. 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3.6 (typ.) MTN3N65FP ID 3A Description The MTN3N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

DHSJ13N65/DHFSJ13N65/DHISJ13N65 DHESJ13N65/DHBSJ13N65/DHDSJ13N65 13A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced 2 D V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 0.28 DS(on) (TYP) G RoHS standard. 1 I = 13A 3 S D 2 Features F

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

RU13N65R N-Channel Advanced Power MOSFET Features Pin Description 650V/13A, RDS (ON) =650m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) G DS TO220 D D D D D Applications D pp D AC/DC Power Conversion i

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

JFFC13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

JFFM13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

PTP13N65 PTA13N65 650V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 650V 0.55 13A RDS(ON),typ.=0.55 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Bran

SW13N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V High ruggedness Low RDS(ON) (Typ 0.6 )@VGS=10V ID 13A Low Gate Charge (Typ 54nC) RDS(ON) 0.6 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application LED, Charger, PC Power 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS 650V High ruggedness 5 ID 13A 1 8 Low RDS(ON) (Typ 0.24 ) 2 7 6 @VGS=10V 3 RDS(ON) 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3

March 2013 BVDSS = 650 V RDS(on) typ = 0.4 HFS13N65U ID = 14.0 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

March 2013 BVDSS = 650 V RDS(on) typ = 0.4 HFP13N65U ID = 14.0 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

QM03N65F 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM03N65F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 4 3A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM03N65F mee

QM03N65D 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM03N65D is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 4 3A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM03N65D mee

WML53N MK53N65C N65C4, WM C4 WMN53N65C4, WMM53N MJ53N65C N65C4, WM C4 650V 0.06 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C4 is ate

WML53N MK53N65F N65F2, WM F2 WMN , WMM53N MJ53N65F N53N65F2, N65F2, WM F2 650V 0.062 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s n junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa body ET f

WML13 WMK13N6 3N65EM, W 65EM, WMM13N65EM WMN13 WMP13N6 3N65EM, W 65EM, WMO13N65EM 650V n Power MOSFET V 0.35 Super Junction Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate ch

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

nvert CS3N65F,CS3N65P,CS3N65U,CS3N65D Suzhou Convert Semiconductor Co ., Ltd. 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N65F TO-220F

nvert CS3N65LF,3N65LU Suzhou Convert Semiconductor Co ., Ltd. 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N65LF TO-220F CS3N65LF CS3N

nvert Suzhou Convert Semiconductor Co ., Ltd. CS13N65P,CS13N65F 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS13N65F TO-220F CS13N65F CS