Справочник транзисторов. 3N65

 

Биполярный транзистор 3N65 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 3N65

Тип материала: Si

Полярность: NPN

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10 V

Макcимальный постоянный ток коллектора (Ic): 0.005 A

Предельная температура PN-перехода (Tj): 150 °C

Корпус транзистора: TO72

Аналоги (замена) для 3N65

 

 

3N65 Datasheet (PDF)

1.1. stl13n65m2.pdf Size:636K _update

3N65
3N65

STL13N65M2 N-channel 650 V, 0.365 Ω typ., 6.5 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code VDS RDS(on) max ID STL13N65M2 650 V 0.475 Ω 6.5 A • Extremely low gate charge • Excellent output capacitance (COSS) profile 1 2 3 • 100% avalanche tested 4 • Zener-protected PowerFLAT™ 5x6 HV Applications • S

1.2. stf13n65m2 stfi13n65m2.pdf Size:564K _update

3N65
3N65

STF13N65M2, STFI13N65M2 N-channel 650 V, 0.37 Ω typ., 10 A MDmesh™ M2 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Features RDS(on) Order code VDS max ID STF13N65M2 650 V 0.43 Ω 10A STFI13N65M2 • Extremely low gate charge 3 2 1 2 1 3 • Excellent output capacitance (Coss) profile TO-220FP I2PAKFP (TO-281) • 100% avalanche tested

 1.3. sti33n65m2.pdf Size:794K _update

3N65
3N65

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packages Datasheet - production data Features TAB TAB RDS(on) Order codes VDS max ID STB33N65M2 3 3 1 2 1 STF33N65M2 TO-220FP D2PAK 650 V 0.14 Ω 24 A STP33N65M2 TAB TAB STI33N65M2 • Extremely low gate charge • Exce

1.4. stf33n65m2.pdf Size:794K _update

3N65
3N65

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packages Datasheet - production data Features TAB TAB RDS(on) Order codes VDS max ID STB33N65M2 3 3 1 2 1 STF33N65M2 TO-220FP D2PAK 650 V 0.14 Ω 24 A STP33N65M2 TAB TAB STI33N65M2 • Extremely low gate charge • Exce

 1.5. stp33n65m2.pdf Size:794K _upd

3N65
3N65

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packages Datasheet - production data Features TAB TAB RDS(on) Order codes VDS max ID STB33N65M2 3 3 1 2 1 STF33N65M2 TO-220FP D2PAK 650 V 0.14 Ω 24 A STP33N65M2 TAB TAB STI33N65M2 • Extremely low gate charge • Exce

1.6. stu13n65m2.pdf Size:545K _upd

3N65
3N65

STP13N65M2, STU13N65M2 N-channel 650 V, 0.37 Ω typ.,10 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features RDS(on) Order code VDS ID max TAB STP13N65M2 TAB 650 V 0.43Ω 10A STU13N65M2 3 2 1 3 2 • Extremely low gate charge 1 TO-220 • Excellent output capacitance (Coss) profile IPAK • 100% avalanche tested • Zener-pr

1.7. stb33n65m2.pdf Size:794K _upd

3N65
3N65

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packages Datasheet - production data Features TAB TAB RDS(on) Order codes VDS max ID STB33N65M2 3 3 1 2 1 STF33N65M2 TO-220FP D2PAK 650 V 0.14 Ω 24 A STP33N65M2 TAB TAB STI33N65M2 • Extremely low gate charge • Exce

1.8. std13n65m2.pdf Size:550K _upd

3N65
3N65

STD13N65M2 N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID TAB STD13N65M2 650 V 0.43 Ω 10 A • Extremely low gate charge 3 2 • Excellent output capacitance (Coss) profile 1 • 100% avalanche tested • Zener-protected DPAK Applications • Switching applications Figure 1. I

1.9. mdf13n65b.pdf Size:830K _upd-mosfet

3N65
3N65

 MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω General Description Features These N-channel MOSFET are produced using advanced  V = 650V DS MagnaChip’s MOSFET Technology, which provides low on-  I = 14A @ V = 10V D GS state resistance, high switching performance and excellent  R ≤ 0.46Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

1.10. stp13n65m2.pdf Size:545K _upd-mosfet

3N65
3N65

STP13N65M2, STU13N65M2 N-channel 650 V, 0.37 Ω typ.,10 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features RDS(on) Order code VDS ID max TAB STP13N65M2 TAB 650 V 0.43Ω 10A STU13N65M2 3 2 1 3 2 • Extremely low gate charge 1 TO-220 • Excellent output capacitance (Coss) profile IPAK • 100% avalanche tested • Zener-pr

1.11. hfp13n65u.pdf Size:194K _update_mosfet

3N65
3N65

March 2013 BVDSS = 650 V RDS(on) typ = 0.4 HFP13N65U ID = 14.0 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area

1.12. qm03n65f.pdf Size:316K _update_mosfet

3N65
3N65

 QM03N65F 機密 第 1 頁 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM03N65F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 4 Ω 3A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM03N65F mee

1.13. qm03n65d.pdf Size:343K _update_mosfet

3N65
3N65

 QM03N65D 機密 第 1 頁 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM03N65D is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 4 Ω 3A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM03N65D mee

1.14. cs3n65a4h-g.pdf Size:345K _update_mosfet

3N65
3N65

Silicon N-Channel Power MOSFET R ○ CS3N65 A4H-G General Description: VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.15. hfs13n65u.pdf Size:186K _update_mosfet

3N65
3N65

March 2013 BVDSS = 650 V RDS(on) typ = 0.4 HFS13N65U ID = 14.0 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area

1.16. 3n65k.pdf Size:390K _utc

3N65
3N65

UNISONIC TECHNOLOGIES CO., LTD 3N65K Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65K is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications

1.17. 3n65z.pdf Size:344K _utc

3N65
3N65

UNISONIC TECHNOLOGIES CO., LTD 3N65Z Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N65Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching

1.18. 3n65.pdf Size:410K _utc

3N65
3N65

UNISONIC TECHNOLOGIES CO., LTD 3N65 Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications a

1.19. 3n65a.pdf Size:358K _utc

3N65
3N65

UNISONIC TECHNOLOGIES CO., LTD 3N65A Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applicat

1.20. mtn3n65fp.pdf Size:354K _cystek

3N65
3N65

Spec. No. : C798FP Issued Date : 2010.03.12 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 3.6Ω (typ.) MTN3N65FP ID : 3A Description The MTN3N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

1.21. cs3n65 a4h-g.pdf Size:345K _crhj

3N65
3N65

Silicon N-Channel Power MOSFET R ○ CS3N65 A4H-G General Description: VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.22. mdf13n65bth.pdf Size:811K _magnachip

3N65
3N65

 MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω General Description Features These N-channel MOSFET are produced using advanced  V = 650V DS MagnaChip’s MOSFET Technology, which provides low on-  I = 14A @ V = 10V D GS state resistance, high switching performance and excellent  R ≤ 0.46Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable device

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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