8550 Rev.F Jul.-2019 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features P ,I , 8050 C CHigh PC and IC, complementary pair with 8050. / Applications 2W 2W output amplifier of portable radios in class B push-pull operation.

March 2008SS85502W Output Amplifier of Portable Radios in Class B Push-pull OperationFeatures Complimentary to SS8050 Collector Current: IC=1.5A Collector Power Dissipation: PC=1W (TC=25C)TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-

SS8550 PNP EPITAXIAL SILICON TRANSISTOR2W OUTPUT AMPLIFIER OF PORTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. Complimentary to SS8050 Collector Current IC= -1.5A Collector Dissipation:PC=2W (TC=25 )ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEB

MCCMMSS8550-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8550-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"PNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plastic-Encapsulate

MCCMMSS8550-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8550-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plastic-Encapsulate Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.Tra

MMSS8550W-LMCCMicro Commercial Components MMSS8550W-HTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMSS8550W-JPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"PNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plasti

MMS8550Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1PNP Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSPlastic-EncapsulateCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise SpecifiedTransistor Operating Junction Tempera

MCCMMS8550-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMS8550-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.Plastic-Encapsulate Collector-

MMSS8550W-LMCCMicro Commercial Components MMSS8550W-HTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMSS8550W-JPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"PNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plasti

MCCMMS8550-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMS8550-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.Plastic-Encapsulate Collector-

MCCSS8550-CTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsSS8550-DCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storage

S8550-BMCCMicro Commercial ComponentsTMS8550-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S8550-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating a

MMSS8550W-LMCCMicro Commercial Components MMSS8550W-HTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMSS8550W-JPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"PNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plasti

M C CTMPXT8550-BMicro Commercial Components PXT8550-CMicro Commercial Components20736 Marilla Street ChatsworthPXT8550-DCA 91311Phone: (818) 701-4933PXT8550-D3Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Marking:Y2/8550Plas

MCC8550SS-CTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components8550SS-DCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storage

MCCMMSS8550-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8550-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Silicon Case Material:Molded Plastic. UL FlammabilityClassificatio Rating 94-0 and MSL Rating 1 Marking:Y2 Plastic-Encapsulate Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.Tra

DATA SHEETwww.onsemi.comPNP Epitaxial SiliconTransistorTO-92-3CASE 135ANSS8550123Features 2 W Output Amplifier of Portable Radios in Class B Push-PullOperation Complementary to SS8050TO-92-3 Collector Current: IC = 1.5 A CASE 135AR1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS23Compliant1. Emitter2. BaseABSOLUTE MAXIMUM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES * Collector Current up to 1.5A * Collector-Emitter Volt

UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP 1transistor, designed for Class B push-pull audio amplifier and TO-92general purpose applications. FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V

UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL PNP TRANSISTORDESCRIPTION The UTC HE8550 is a low voltage high current smallsignal PNP transistor, designed for Class B push-pull2W audio amplifier for portable radio and general purposeapplications.1FEATURES*Collector current up to 1.5A*Collector-Emitter voltage up to 25 V*Complimentary to

UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL PNPTRANSISTORFEATURES*Collector current up to 800mA*Collector-Emitter voltage up to 20 V*Complimentary to 8050SAPPLICATIONS*Class B push-pull audio amplifier*General purpose applicationsTO-921:EMITTER 2: COLLECTOR 3: BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )

UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH 3CURRENT SMALL SIGNAL PNP TRANSISTOR 21SOT-23 DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 FEATURES TO-92*Collector current up to 700mA *Collector-Emitter vo

STA8550SFPNP Silicon TransistorDescriptions PIN Connection High current application Radio in class B push-pull operation 3 Feature 1 Complementary pair with STC8050SF 2 SOT-23F Ordering Information Type NO. Marking Package Code 8B STA8550SF SOT-23F Device Code hFE Rank Year&Week Code Absolute Maximum Ratings (Ta=25

STS8550SemiconductorSemiconductorPNP Silicon TransistorDescriptions High current application Radio in class B push-pull operationFeature Complementary pair with STS8050Ordering InformationType NO. Marking Package Code STS8550 STS8550 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.060.11.27 Typ.2.54 Typ.1 2 3PIN Conn

SPS8550Semiconductor Semiconductor PNP Silicon TransistorFeatures Suitable for low voltage large current drivers High DC current gain and large current capability Complementary pair with SPS8050 Ordering Information Type NO. Marking Package Code SPS8550 SPS8550 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collecto

S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-924.55 0.2 3.5 0.2 (1.27 Typ.)FEATURES 1.25 0.21 2 3 Excellent hFE linearity 2.54 0.11: Emitter2: Base3: Collector 0.080.43 0.070.46 0.1ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Symbol Ratings Unit

S8550PNP SiliconElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURES SOT-23Dim Min MaxCollector3A 2.800 3.040Complimentary to S8050B 1.200 1.4001BaseC 0.890 1.1102EmitterCollector Current: IC=0.5AD 0.370 0.500G 1.780 2.040AH 0.013 0.100LJ 0.085 0.1773K 0.450 0.60

M8550 -40V, -0.8A, 200mW PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Power dissipation AL33MARKING Top View C B11 2Product Marking Code 2K EM8550 Y21 DH JF GCLASSIFICATION OF hFE(2) Product-Rank M8550-L M8550-H Millimeter Millimeter REF. R

M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE AD Power Dissipation BE CFG H1Emitter 1112Base 2223Collector 333J Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified

8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G HEmitter Collector Base JCLASSIFICATION OF hFE (1) A DMillimeterProduct-Rank 8550SST-B 8550SST-C 8550SST-DREF.B Min. Max.A 4.

SS8550TPNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURESPower dissipationPCM : 1 WCollector CurrentICM : -1.5 A1Collector-base voltage 23V(BR)CBO : - 40 V12 3Operating & storage junction temperature1O OTj, Tstg : - 55 C ~ + 150 C1. EMITTER22. BASS3 . COL

SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free Collector3FEATURES SOT-23 Power dissipation Collector31Dim Min MaxPCM : 0.3 W BaseA 2.800 3.0401BaseB 1.200 1.4002 Collector Current EmitterC 0.890 1.1102ICM : - 1.5 A D 0.370 0.500EmitterG 1.780 2

SS8550WPNP SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-323FEATURESCollectorDim Min Max33A 1.800 2.200Power dissipation11 B 1.150 1.3502 BasePCM : 0.2 WC 0.800 1.000Collector CurrentD 0.300 0.4002ICM : -1.5 A A G 1.200 1.400EmitterLH 0.000 0.100Collector-base voltageJ 0.100 0.2503V(BR)CBO : - 40 VS

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPNCN8550 PNPTO-92Plastic PackageCBEABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 40 VVEBOEmitter Base Voltage 6.0 VICCollector Current 800 mAICMPeak Colle

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR TRANSISTOR CD8550 TO-92CBEABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 25 VCollector -Base Voltage VCBO 40 VEmitter Base Voltage VEBO 6.0 VCollector Current IC 2.0 ACollector Power Dissipation PC 1.0 WOperating And Storage Ju

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8550 PIN CONFIGURATION (PNP)SOT-231 = BASE2 = EMITTER3 = COLLECTOR Formed SMD Package312ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 30 VVCEOCollector Emitter Voltage 25 VEmitter Base Voltage V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S8550 FEATURE Equivalent Circuit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8550 TRANS ISTOR(PNP) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage

www.jscj-elec.com AD-SS8550* series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-SS8550* series Plastic-Encapsulated Transistor AD-SS8550* series Transistor (PNP) FEATURES High Collector Current Complimentary to AD-SS8050 AEC-Q101 qualified Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-SS8550* series MAXIMUM RATINGS (T = 25C unless otherwise speci

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 8550SS TRANSISTOR (PNP) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors8550S TRANSISTOR (PNP)TO-92 FEATURE Excellent hFE linearity 1. EMITTER2. COLLECTOR3. BASEEquivalent Circuit 8550S=Device code Solid dot=Green molding compound device, 8550S Z if none,the normal deviceZ=Rank of hFE XXX=Code1ORDERING INFORMATION Part Number

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT8550 TRANSISTOR (PNP) 1. BASE FEATURES Compliment to PXT8050 2. COLLECTOR MARKING: Y2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Bas

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550S TRANSISTOR (PNP) TO-92 FEATURES 1.EMITTER Power Dissipation 2. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.BASE Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collecto

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT- 23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO3. COLLECTOR V Collector-Emitter Voltage -25 V

SEMICONDUCTOR KTC8550TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8050.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -35 VCollector-Base VoltageG 0.85H 0.45VCEO -30 VCollector-Emitter Voltage_HJ 14.0

SEMICONDUCTOR MPS8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. EFEATUREL B LComplementary to MPS8050S. DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25)H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55P PM 0.20 M

SEMICONDUCTOR KTC8550ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8050A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage -35 VG 0.85H 0.45VCEOCollector-Emitter Voltage -30 V_HJ 14

SEMICONDUCTOR KTC8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8050S.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201MAXIMUM RATING (Ta=25) G 1.90H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55VCBO -35 VC

SEMICONDUCTOR MPS8550SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8050SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -25 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -1,200 mAPC *Collector Power Dissipation 350 mWTjJunctio

SEMICONDUCTOR MPS8550TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to MPS8050.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -40 VCollector-Base VoltageG 0.85H 0.45VCEO -25 VCollector-Emitter Voltage _HJ 14.0

SS8 550TRANSISTOR(PNP)SOT-323 FEA TURES Complimentary to SS8050 1. Base MARKING: Y2 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W

S8 550S901 2SOT-23 TRANSISTOR(PNP)FEATURES Complimentary to S8050 1. BASE Collector current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A

M8 550TRANSISTOR(PNP)SOT-23 FEATURES Power dissipation MARKING: Y21 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Ju

PXT8 550TRANSISTOR(PNP) SOT-89 FEATURES 1. BASE Compliment to PXT8050 1 2. COLLECTOR MARKING: Y2 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipati

SS8 550TRANSISTOR(PNP)FEATURES SOT23 High Collector Current Complementary to SS8050 MARKING: Y2MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO3. COLLECTOR V Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -1.5 A P Collector P

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8550FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8550FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8550FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8550FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

SS8550 SOT-23 Transistor(PNP)SOT-231. Base 2.Emitter 3.Collector FeaturesComplimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A

S8550 Silicon Epitaxial Planar TransistorFEATURES High Collector Current.(IC= -500mA). A SOT-23 Complementary To S8050.Dim Min MaxA 2.70 3.10E Excellent HFE Linearity. B 1.10 1.50K BC 1.0 TypicalD 0.4 TypicalAPPLICATIONS E 0.35 0.48JDG 1.80 2.00 High Collector Current. GH 0.02 0.1J 0.1 TypicalHK 2.20 2.60CAll Dimensions in mm ORDERING INFORM

M8550(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters)PC Colle

S8550(PNP)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units -40 VVCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters)

S8550 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC C

PXT8550 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.42 1.61.83. EMITTER 1.41.43 2.64.25Features2.43.75 Compliment to PXT8050 0.8MIN0.530.400.480.442x)MARKING: Y2 0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Colle

M8550 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A

SS8550 Silicon Epitaxial Planar Transistor1. BASE 2. EMITTERA SOT-23 3. COLLECTORDim Min MaxA 2.70 3.10EEATURES B 1.10 1.50K BC 1.0 Typical Collector Current.(IC= 1.5A D 0.4 TypicalE 0.35 0.48J Complementary To SS8050. DG 1.80 2.00GH 0.02 0.1 Collector Dissipation: PC=0.3W (TC=25C) J 0.1 TypicalHK 2.20 2.60CAll Dimensions in mm APPLICA

SS8550(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PC : 1 W (TA=25) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Collector Curren

8550S(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -25 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -500 mA

S8550PNP General Purpose TransistorsTO-92P b Lead(Pb)-Free1. E MIT T E R122. B A SE33. COL L E CTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-E m itter Voltage VCE O -2 5 VdcCollector-B as e Voltage VCB O -4 0VdcE m itter-B as e VOltage VE B O-5 . 0 VdcCollector Current IC-5 0 0 mAdcP 0 . 6 2 5Total Device Dis s ipation T =2 5

M8550LT1PNP General Purpose Transistors3P b Lead(Pb)-Free12SOT-23ValueVCEO 25405.0 8003002.44170.125100 40 5.01000.15u35u4.0 0.15WEITRON1/4 15-Jul-10http://www.weitron.com.twM8550LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current Gain-

SS8550LT1PNP General Purpose Transistors31P b Lead(Pb)-Free2SOT-23ValueVCEO-25-40-5.0-15003002.4 417-0.1-25-40-100-5.0-100-0.15 u-40-0.15 u-5.0WEITRON27-Jul-20121/2http://www.weitron.com.twSS8550LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC

SS8550Plastic-Encapsulate TransistorsTO-92PNP Silicon COLLECTOR32BASE11. EMITTER 2312. BASEEMITTER3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol SS8550UnitCollector-Emitter Voltage VCEO -25 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base Voltage VEBO-5.0 VdcCollector Current IC-1.5 AdcTotal Device Dissipation T =25 C PD WA 1.0

SS8550WPNP Plastic-Encapsulate Transistor3P b Lead(Pb)-Free12MAXIMUM RATINGS (TA=25 unless otherwise noted)1. BASESymbol Parameter Value Units2. EMITTER3. COLLECTORV(BR)CBO Collector- Base Voltage -40 VICM Collector Current -1.5 ASOT-323(SC-70).PCM Power Dissipation (Tamb=25C) W0.2TJ Junction Temperature -55 to +150 Tstg Storage Temperature -55 to +15

FM120-MWILLAS8550SLT1THRUFM1200-MSOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offersSOT-23 better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

FM120-M 8550HXLT1WILLASTHRUFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize b

FM120-M WILLAS8550xLT1THRUGeneral Purpose BARRIER RECTIFIERS -20V- 200VTransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board

Spec. No. : HE6114HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2006.07.28MICROELECTRONICS CORP.Page No. : 1/4HE8550PNP Epitaxial Planar TransistorDescriptionThe HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pulloperation. TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature................................

Spec. No. : HE6813HI-SINCERITYIssued Date : 1997.08.11Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBT8550PNP EPITAXIAL TRANSISTORDescriptionThe HMBT8550 is designed for general purpose amplifier applications.SOT-23Features High DC Current: hFE=150-400 at IC=150mA Complementary to HMBT8050Absolute Maximum Ratings Maximum TemperaturesStor

Spec. No. : HE6108HI-SINCERITYIssued Date : 1997.09.05Revised Date : 2004.11.23MICROELECTRONICS CORP.Page No. : 1/5HA8550PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550 is designed for use in 2W output amplifier of portable radios in class Bpush-pull operation.FeaturesTO-92 High total power dissipation (PT: 2W, TC=25C) High collector current (IC: 1.5A)

Spec. No. : HE6109HI-SINCERITYIssued Date : 1997.09.05Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5HA8550SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550S is designed for general purpose amplifier applications.TO-92Features High DC Current Gain (hFE=100~500 at IC=150mA) Complementary to HA8050SAbsolute Maximum Ratings Maximum Temperatu

Spec. No. : HE6129HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2004.07.26MICROELECTRONICS CORP.Page No. : 1/5HE8550SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HE8550S is designed for general purpose amplifier applications.FeaturesTO-92 High DC Current gain: 100-500 at IC=150mA Complementary to HE8050SAbsolute Maximum Ratings Maximum Temperatures

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25) 2. BASE Collector current 3. COLLECTOR ICM: -0.5 A Collector-base voltage 1 2 3 V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM: 0.2 W (Tamb=25) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBO: -25 V Operating and storage junction temperature range TJ, Tstg: -55to +150 ELE

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Unit: mm Operating and storage junction temperature range TJ, Tst

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25) 3. COLLECTOR : 2 W (TC=25) 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltag

PNP PNP EPITAXIAL SILICON TRANSISTOR R3CG8550 MAIN CHARACTERISTICS Package I -1.5A CV -25V CEOP 1W C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92

Spec. No. : C313A3-B Issued Date : 2004.03.04 CYStech Electronics Corp.Revised Date : 2009.02.02 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTP8550BA3Description The BTP8550BA3 is designed for use in 2W output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complemen

Spec. No. : C313A3 Issued Date : 2003.07.30 CYStech Electronics Corp.Revised Date : 2007.04.19Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP8550A3Description The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complementary to BT

Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp.Revised Date :2009.02.02 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CESATBTP8550N3Features Low VCE(SAT), -0.22V(typically) at IC=-500mA/IB=-50mA. Complementary to BTN8050N3. Pb-free package Symbol Outline BTP8550N3 SOT-23 BBase CCollector EEmitter Absolute Maxi

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURES Excellent Hfe linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURES Complimentary to S8050 Collector current:Ic=0.5A MARKING:2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

TO-92 Plastic-Encapsulate TransistorsFEATURESTO-92Power dissipationPC : 1 W (TA=25)1.EMITTERMAXIMUM RATINGS (TA=25 unless otherwise noted)2.BASE1 2 3Symbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value Units3.COLLECTORVCBO -40 VVCBOVCBO Collector-Base VoltageVCBOELECTRICALELECTRICALELECTRICALEL

S8550 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features P ,I , S8050 C CHigh PC and IC, complementary pair with S8050. / Applications Amplifier of portable radios in class B push-pull operation.

8550M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 8050M Complementary pair with 8050M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 3 1

S8550M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features S8050M Complementary pair with S8050M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning

L8550(BR3CA8550K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features PC, IC , L8050(BR3DA8050K) High PC and IC, complementary pair with L8050(BR3DA8050K). / Applications 2W 2W output amplifier of portable radios in cl

S8550MG Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features S8050MG Complementary pair with S8050MG.HF Product. / Applications Power amplifier applications. / Equivalent Circu

3CA8550 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features P ,I , 3DA8050 C CHigh PC and IC, complementary pair with 3DA8050. / Applications 2W 2W output amplifier of portable radios in class B push-pull opera

S8550W(BR3CG8550W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 PNP Silicon PNP transistor in a SOT-323 Plastic Package. / Features S8050W(BR3CG8050W)Complementary pair with S8050W(BR3CG8050W). / Applications Power amplifier applications. / Equivalent Cir

8550W(BR3CA8550W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 PNP Silicon PNP transistor in a SOT-323 Plastic Package. / Features 8050W(BR3DA8050W)Complementary pair with 8050W(BR3DA8050W). / Applications Power amplifier applications. / Equivalent Circui

L8550M Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features L8050M Complementary pair with L8050M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 3 2

S8550A(BR3CG8550AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features PC, IC , S8050A(BR3DG8050AK) High PC and IC, complementary pair with S8050A(BR3DG8050AK). / Applications Amplifier of portable radios in class B pu

8550T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 8050T Complementary pair with 8050T. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 1 2

8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 25 VEmitter Base Voltage

MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package OAbsolute Maximum Ratings (T = 25 C) aParameter Symbol Value Unit Collector Bas

8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Co

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesPNP Silicon S-L8550HPLT1GSeriesFEATURE High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirem

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT

LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesS-L8550HPLT1GPNP SiliconFEATURESeries High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8550PLT1GPNP SiliconSeriesFEATURE S-LH8550PLT1G High current capacity in compact package.SeriesIC =-1.5A. Epitaxial planar type. PNP complement: LH85503 Pb-Free Package is available.S- Prefix for Automotive and Other Applications Requiring Unique 1Site and Control Change Requirements; AEC-Q101 Qualified and

Shantou Huashan Electronic Devices Co.,Ltd. H8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJunction Temperature150PCCollector Dissipation

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

Shantou Huashan Electronic Devices Co.,Ltd. HC8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJunction Temperature150PCCollector Dissipation

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

SEMICONDUCTOR FTA8550HTECHNICAL DATA General Purpose Transistors PNP Silicon FEATURE 3 High current capacity in compact package. I C =-1.5A. 1 Epitaxial planar type. 2 PNP complement: FTC8050HPb-Free Package is available. SOT23 DEVICE MARKING AND ORDERING INFORMATION COLLECTOR 3 Shipping Device Marking 1 FTA8550H 1FD 3000/Tape&Reel BASE 2 EM

S8550GPlastic-Encapsulate TransistorsSimplified outlineS8550G TRANSISTOR NPN TO-92Features Power dissipation 1.EMITTER PCM : 0.625 WTamb=25 Collector current 2. COLLECTOR ICM : -0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO : -40 V Operating and storage junction temperature range TJTstg: -55 to +150 Electrical Characteristic

FF8550HQLGPlastic-Encapsulate TransistorsSimplified outlineFF8550HQLG TRANSISTORPNP)SOT-23Features3 Complimentary to F8050HQLG High Collector Current11. BASE 2. EMITTER 23. COLLECTORMaximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Vol

SS8550GPlastic-Encapsulate Transistors Simplified outlineSS8550G TRANSISTOR NPN TO-92Features Power dissipation 1.EMITTER PC : 1 W (Ta=25 ) 2.BASE 3.COLLECTOR123 Maximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Coll

SMD Type TransistorsSMD TypePNP TransistorsKST8550D-50SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13Features Collector Current Capability IC=-1.2A Collector Emitter Voltage VCEO=-50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VC

SMD Type TransistorsPNP TransistorsH8550 Features1.70 0.1 Collector Power Dissipation: PC=0.5W Collector Current: IC=-1.5A Comlementary to H80500.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -40 VCollector-emitter voltage VCEO -25 VEmitter-base voltage VEBO -

SMD Type TransistorsSMD TypePNP TransistorsKST8550SSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesCollector current: IC-=0.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage V

SMD Type TransistorsSMD TypePNP TransistorsKST8550SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesCollector Current: IC=-1.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEB

SMD Type TransistorsSMD TypePNP Transistors KST8550DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2Collector Current: IC=-1.5A+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage

SMD Type TransistorsPNP TransistorsH8550D Features1.70 0.1 Collector Power Dissipation: PC=0.5W Collector Current: IC=-1.5A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -40 VCollector-emitter voltage VCEO -25 VEmitter-base voltage VEBO -5 VCollector current IC -1

SMD Type TransistorsPNP TransistorsKST8550XSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Power Dissipation: PC=0.3W Collector Current: IC=-1.5A1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emit

SMD TypeSMD Type TransistorsPNP TransistorsKST8550MSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current: IC=-0.8A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-

CHENMKO ENTERPRISE CO.,LTDCHT8550GPSURFACE MOUNTEPITAXIAL TransistorVOLTAGE 20 Volts CURRENT 700 mAmpereFEATURE* Small surface mounting type. (SOT-23)* High DC current . SOT-23CONSTRUCTION(1)* PNP transistors in one package.(3)(2)( ) ( ).055 1.40 .028 0.70( ) ( ).047 1.20 .020 0.50( ).103 2.64.086 (2.20)( ).045 1.15C (3)CIRCUIT( ).033 0.85(1

DC COMPONENTS CO., LTD.DMBT8550DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2.045(1.15)Absolute Maximum Ratings(TA=25oC).034(0.85).091(2.30)

DC COMPONENTS CO., LTD.DC8550DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in 2W output amplifier of portableradios in class B push-pull operation.TO-92Pinning.190(4.83)1 = Emitter.170(4.33)2 = Base2oTyp3 = Collector.190(4.83).170(4.33)2oTypAbsolute Maximum Ratings(TA=25oC).500Characterist

TRANSISTOR S8550DA MAIN CHARACTERISTICS FEATURES IC -1.5A Epitaxial silicon VCEO -45V High switching speed PC 1W S8050DA Complementary to S8050DA RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power am

S8550A(3CG8550A) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8050A(3DG8050A) C CFeatures: High P and I , complementary pair with S8050A(3DG8050A). C C/Absolute maximum ratings(Ta=25) Symbol Rati

S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR :/Purpose: Power amplifier applications. : S8050M(3DG8050M)/Features: Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA

S8550(3CG8550) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8050(3DG8050) C CFeatures: High P and I , complementary pair with S8050(3DG8050). C C/Absolute maximum ratings(Ta=25) Symbol Rating Uni

Product specification PNP Silicon Epitaxial Planar Transistor S8550 FEATURES Pb High Collector Current.(I = -500mA). CLead-free Complementary To S8050. Excellent H Linearity. FEAPPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S8550 2TY SOT-23 : none is for Lead Free package; G is for

Production specification PLASTIC-ENCAPSULATE TRANSISTORS PXT8550 FEATURES Commplimentray to PXT8050 PbLead-free SOT-89 ORDERING INFORMATION Type No. Marking Package Code PXT8550 8550 SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter ValueUnit Collector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Vol

Product specification PNP Silicon Epitaxial Planar Transistor SS8550 EATURES Pb Collector Current.(I = 1.5A CLead-free Complementary To SS8050. Collector Dissipation: P =0.3W (T =25C) C CAPPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SS8550 Y2 SOT-23 : none is for Lead Free package;

K8550S PNP Silicon Transistor Descriptions PIN Connection General purpose Bipolar Transistor Features Large collector current Suitable for low-Voltage operation because of Its low saturation voltage Complementary pair with K8050S Ordering Information Type NO. Marking Package Code KV K8550S SOT-23 Device Code HFE Grade

KS8550L PNP Silicon Transistor Descriptions PIN Connection High current application Features Complementary pair with KS8050L Ordering Information Type NO. Marking Package Code KU KS8550L SOT-23 Device Code HFE Grade Year& Week Code AUK Dalian Absolute maximum ratings Ta=25C Characteristic Symbol Ratings Unit Collector-Base

PT23T8550 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements Pure tin plating: 7 ~ 17 um Pin flatness:3mil Structu

S8550SOT-23 TRANSISTOR(PNP)FEATURES Complimentary to S8050 1. BASE Collector current: IC=0.5A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissip

SS8550TRANSISTOR(PNP)SOT23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -1.5 A P Collector Power Dissipati

SS8550WPNP Transistors Features3 High Collector Current Complementary to SS8050W21.Base2.Emitter3.Collector1 Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A PC Collector Power D

SUNROC8550C TRANSISTOR(PNP) MAXIMUM RATINGS(Ta=25 unless otherwise noted) 1. EMITTER Symbol Parameter Value UnitsCollector-Base Voltage 2. BASE VCBO -40 VCollector-Emitter Voltage -25VCEO V3. COLLECTOR Emitter-Base Voltage VEBO -5 VCollector Current IC -0.5 ACollector Power Dissipation PC 625 mWJunction Temperature Tj 150 Storag Temperature -55150

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RUMW UMW S8550SOT-23 Plastic-Encapsulate TransistorsSOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Complimentary to S8050 3. COLLECTOR Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Volta

RUMW UMW SS8550SOT-23 Plastic-Encapsulate TransistorsSS8550 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EB

RoHS MMBT8550LT1PNP EPITAXIAL SILICON TRANSISTOR SOT-2332W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION2 Complement to MMPT8050LT11.1.BASE Collector-current:Ic=-500mA 2.EMITTER High Total Power Dissipation:Pc=225mW2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage

MMBT8550C/DFeatures For switching and amplifier applications Especially suitable for AF-Driver stages and lowpower output stages As complementary type of the NPN transistorMMBT8050C/D is recommendedAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 25 VEmitter Base V

S8550General Purpose TransistorsPNP SiliconPackage outlineFeatures High current capacity in compact package IC = -0.5A.SOT-23 Epitaxial planar type Pb-free package is available Suffix "-H" indicates Halogen-free part, ex.S8550 -H.(B)(C)(A)0.063 (1.60)0.027 (0.67)0.047 (1.20) 0.013 (0.32)0.108 (2.75)Mechanical data0.083 (2.10) Epoxy:UL94-V0 ra

1.5A1500http://www.anbonsemi.comDocument ID Issued Date Revised Date Revision Page.TEL:886-755-23776891AS-3140127 2013/03/08 2016/05/16 D 4FAX:886-755-81482182http://www.anbonsemi.comDocument ID Issued Date Revised Date Revision Page.TEL:886-755-23776891AS-3140127 2013/03/08 2016/05/16 D 4FAX:886-755-81482182http://www.anbonsemi.comDocument ID Issued Date Revised Dat

S8550Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 Features Complimentary to S8050 Collector Current: I =0.5A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) UnitsSymbol ValueParameter V 1. BASE VCBO Collector-Base Voltage -40V 2. EMITTER VCEO Collector-Emitter Voltage -25 3. COLLECTOR V VEBO Emitt

M8550Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 FeaturesComplimentary to M8050 Collector Current: I =0.8AMaximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) UnitsSymbol ValueParameterV 1. BASE VCBO Collector-Base Voltage -40V 2. EMITTER VCEO Collector-Emitter Voltage -253. COLLECTOR V VEBO Emitter-Bas

SS8550Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS FeaturesSOT-23 High Collector Current Complementary to SS8050Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO2. EMITTER -25 V V Collector-Emitter Voltage CEO3. COLLECTOR V Emitter-Ba

FEATURES High Collector Current SOT-23 Complementary to S8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -0.5 A P Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To Ambient 417

FEATURES High Collector Current SOT-23 Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -1.5 A P Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To Ambient 417

1.5A1500Document ID Issued Date Revised Date Revision Page.FM-3140127 2013/03/08 2016/05/16 D 4Document ID Issued Date Revised Date Revision Page.FM-3140127 2013/03/08 2016/05/16 D 4Document ID Issued Date Revised Date Revision Page.FM-3140127 2013/03/08 2016/05/16 D 4 SS8550 Y2 Document ID Issued Date Revised Date Revision Page.FM-3140127 2013/03/08 2016/05/16 D 4

S8550SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23Complimentary to S8050 Collector Current: IC=-0.5A Marking: 2TYSymbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOCI Collector Current -500 mA CP Collector Power Dissipation 300 mW CR

SS8550HD ST 0.52SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23Complimentary to SS8050Collector Current: IC=-1.5A Marking: Y2Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -25 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current C-1.5 A P Collector Power Dissipation 3

S8550PNP Silicon General Purpose TransistorTO-924.55 0.2 3.5 0.2 (1.27 Typ.)FEATURES 1.25 0.21 2 3Complimentary to S80502.54 0.1Collector Current: IC = 0.5A 1: Emitter2: Base3: Collector 0.080.43 0.070.46 0.1ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Symbol Ratings UnitCollector to Base Voltage VCBO -40 VCollector to Emitter Voltage VCEO -25 VEmitte

SS8550TO-92 Plastic-Encapsulate Transistors TRANSISTOR ( ) 1. EMITTER 2. BASE 3. COLLECTOREquivalent Circuit SS8550= Device codeTO-92 Bulk 1000pcs/BagSSS8550 Tape 2000pcs/BoxCollector-Base Voltage -40 V Collector-Emitter Voltage -25 VEmitter-Base Voltage -5 VCollector Current -Continuous -1.5 A Collector Power Dissipation mWThermal Resistance rom Junction o Ambi

S8550 SOT-23 Plastic-Encapsulate TransistorsS8550 TRANSISTOR (PNP)SOT-23 FEATURES Complimentary to S8050 Collector Current: IC=0.5A 1. BASEMARKING: 2TY 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOVEBO Emitter-Base Voltage -5 V IC

SS8 550TRANSISTOR(PNP)FEATURES SOT23 High Collector Current Complementary to SS8050 MARKING: Y2MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO3. COLLECTOR V Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -1.5 A P Collector P

www.msksemi.comSS8550-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES High Collector Current Complementary to SS8050-MS1. BASE2. EMITTERSOT23 MARKING Y2 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOVCEO Collector-Emitter Voltage -25 V VEBO Emi

www.msksemi.comS8550-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES Complimentary to S8050-MS 1. BASE Collector current: IC=0.5A2. EMITTERSOT23 3. COLLECTORMARKING : 2TY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-B

S8550PLASTIC-ENCAPSULATE TRANSISTORS PNP Silicon FEATURES Collector CurrentIC = -0.5A MECHANICAL DATA C Available in SOT-23 Package E SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODES8550--T3 SOT-23 Tape Reel2TYNotes: 1. : none is for Lead Free package;

SS8550PLASTIC-ENCAPSULATE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C E B MECHANICAL DATA Available in SOT-23, SOT-323, TO-92 PackageC SolderabilityMIL-STD-202, Method 208 E Full RoHS Compliance B E B C ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODESS8550--T

MMBT8550-1.5A PNP Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. Especially Suitable for AF-Driver Stages and LowPower Output Stages. As Complementary Type of the NPN TransistorMMBT8050-1.5A is Recommended.1.Base 2.Emitter 3.CollectorMarking: -C: X2-D: Y2Absolute Maximum Ratings Ratings at 25 ambient temperature unless other

MMBT8550 PNP Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the NPN TransistorMMBT8050 is Recommended.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 40 V CBOCollector Emitter Voltage

S8550S8550SOT-23PNP TRANSISTOR3FEATURES Complimentary to S8050 Collector current: IC=0.5A 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASE2.EMITTERCollectorBase Voltage -40 VCBO V3.COLLECTORVCEO -25 VCollectorEmitter Voltage-5EmitterBase Voltage VEBO VACollector Current Continuous IC-0.5PC

SS8550 SS8550SOT-23PNP TRANSISTOR3FEATURES High Collector Current Complementary to SS8050 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2ParameterSymbolValue Unit1.BASE2.EMITTERCollectorBase Voltage VCBO -40V3.COLLECTORCollectorEmitter Voltage VCEO -25 VEmitterBase Voltage VEBO -5 V IC -1.5 ACollector Current ContinuousCo

Jingdao Microelectronics co.LTD S8550S8550SOT-23PNP TRANSISTOR3FEATURES Complimentary to S8050 Collector current: IC=0.5A 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASE2.EMITTERCollectorBase Voltage -40 VCBO V3.COLLECTORVCEO -25 VCollectorEmitter Voltag

Jingdao Microelectronics co.LTD SS8550 SS8550SOT-23PNP TRANSISTOR3FEATURES High Collector Current Complementary to SS8050 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2ParameterSymbolValue Unit1.BASE2.EMITTERCollectorBase Voltage VCBO -40V3.COLLECTORCollectorEmitter Voltage VCEO -25 V

S8 550SOT-23 TRANSISTOR(PNP)FEATURES Complimentary to S8050 1. BASE Collector current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Colle

SS8 550 TRANSISTOR(PNP)FEATURES SOT23 High Collector Current Complementary to SS8050 MARKING: Y2MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO3. COLLECTOR V Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -1.5 A P Collector

Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= -500mA Complementary To S8050. Excellent HFE Linearity. APPLICATIONS High Collector Current. ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified 1 of 3 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) 2 of 3 TYPICAL CHARAC

PXT8550PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 25 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 1.5 APower Dissipation Ptot

Integrated inOVP&OCP productsprovider S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 1BASE Collector current: IC=0.8A 2EMITTER 3COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC

Integrated inOVP&OCP products SS8550providerSOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -40 V VCEO Collector

S8550 SOT-23 PNP Transistors321.Base2.EmitterFeatures1 3.CollectorCollector current: IC-=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -0.5 ACollector Power Dissipation PC 0.3 WJunct

SS8550 SOT-23 PNP Transistors321.BaseFeatures2.EmitterCollector Current: IC=-1.5A1 3.Collector Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -1.5 ACollector Power Dissipation PC 0.3 WJunc

S8550SOT-23 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURES Complimentary to S8050 Collector current:Ic=0.5A MARKING:2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -40 V VCEO Collector-Emitter Voltage

L8550HQGeneral Purpose TransistorsPNP SiliconFEATURECOLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1BASE2EMITTERMAXIMUM RATINGSRating Symbol Max UnitCollector-Emitter Voltage V -25 VCEOCollector-Base Voltage VCBO -40 VEmitter-Base Voltage VEBO -5 VCollecto

SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO3. COLLECTOR V Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -1.5 A P Collector Power Diss

SS8550 SS8550 TRANSISTOR (PNP) FEATURES Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -40 V VCEO Collector-Emitter Voltage - -25 V VEBO Emitter-Base Voltage

S8550 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8050 ; Complementary to S8050 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

SS8550 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8050 ; Complementary to SS8050 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

S8550S8550 TRANSISTOR (PNP)FEATURES SOT-23 Complimentary to S8050 Collector current: IC=0.5A 1BASE 2EMITTER 3COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -0.5 APC Coll

PXT8550PXT8550PXT8550 PXT8550 TRANSISTOR (PNP)SOT-89FEATURESCompliment to PXT8050 MARKING: Y21. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted)3. EMITTER Symbol Parameter Value UnitV Collector-Base Voltage -40 VCBOVCEO Collector-Emitter Voltage -25 VV Emitter-Base Voltage -5 VEBOI Collector Current -Continuous -1.5 ACP Collector Power

SS8550WSS8550WSS8550WSS8550WTRANSISTOR(PNP)SS8 550 W SOT323 3FEATURES Complimentary to SS8050W 1. BASE 12. EMITTER 23. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -1.5 APC

SS8550SS8550 TRANSISTORPNP FEATURES Complimentary to SS8050 SOT-23 1BASE MARKING: Y2 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -1.5 APC Collector Power Dissipation

RoHS RoHSCOMPLIANT COMPLIANTS8550-L THRU S8550-H PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: S8550-L 2TYL S8550-H 2TYMaximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Colle

RoHS COMPLIANT SS8550-L THRU SS8550-H PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: SS8550-L Y2L SS8550-H Y2 Off Characteristics Item Symbol Unit Conditions Value Collector-Emitter Voltage VCEO V IC=-100uAdc, IB=

S8550 S8550 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8050 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: 2TY Maximum Ratings & Thermal Characteristics TA = 25C unle

SS8550 SS8550 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8050 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: Y2 Maximum Ratings & Thermal Characteristics TA = 25C unl

S8550T TRANSISTOR (PNP)SOT-523 FEATURES Complimentary to S8050T1. BASE 2. EMITTER Collector current: IC=0.5A 3. COLLECTOR MARKING : 2TYMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -0.5 APC Collector Pow

S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 1BASE Collector current: IC=0.5A 2EMITTER 3COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Co

SOT-89Plastic-Encapsulate TransistorsSS8550 TRANSISTOR (PNP)FEATURESCompliment to SS8050MARKING: Y2MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value UnitV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -25 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current -Continuous -1.5 ACP Collector Power Dissipation 0.5 WCThermal Resist

TRANSISTORPNPSS8550WSOT323 FEATURES Complimentary to SS8050W 1. BASE 2. EMITTER 3. COLLECTOR MARKING: Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -1.5 APC Collector Power Dissipation 0.2 W

S8550GUANGDONG FENGHUA SEMICONDUCTOR TECHNOLOGY CO.,LTD 10 PNP TransistorNO.10,2nd Nanxiang Road, Guangzhou Science Park,Guangzhou City,Guangdong Province,China. Applications:.General purpose application,Switching application

FHTA8550-MEPNP Transistor DESCRIPTIONSSOT-23 PNP PNP transistor in a SOT-23 Plastic Package. APPLICATIONSGeneral purpose application,switching. PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Addition

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDS8550(T =25)aCHARACTERISTIC Symbol Rating Unit Collector-Base VoltageV -40 VdcCBO-Collect-Emitter VoltageV -25 VdcCEO-Emitter-Base VoltageV -5.0 VdcEBO-C

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDSS8550FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to SS8050 SS8050 (Ta=25)CHARACTERISTIC Symbol Rating Unit Collector-Base VoltageVCB

S8550PNP GENERAL PURPOSE SWITCHING TRANSISTOR25Volts POWER 300mWattsVOLTAGEFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-25V.Collector current IC=-0.5A.ansition frequency fT>150MHz @ IC=-Tr20mAdc, VCE=-6Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, PlasticTerminals: Solder

SS8550PNP GENERAL PURPOSE SWITCHING TRANSISTOR25Volts POWER 300mWattsVOLTAGEFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-25V.Collector current IC=-1.5A.ansition frequency fT>100MHz @ IC=-Tr50mAdc, VCE=-10Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, PlasticTerminals: Sold

S8550BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to S8050 Excellent h LinearityFE High Collector Current Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol

PXT8550BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to PXT8050 Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V -40 VCBOCollec

SS8550BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to SS8050 Excellent h LinearityFE High Collector Current Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol

PNP S8550S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 1BASE Collector current: IC=0.5A 2EMITTER 3COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Ba

RS8550S E M I C O N D U C T O RTRANSISTOR(PNP)SOT-23FEATURES Complimentary to S80501. BASE Collector current: I =0.5AC2. EMITTER3. COLLECTORMARKING : 2TYMAXIMUM RATINGS (T =25 unless otherwise noted)ASymbol Parameter Value UnitsV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -25 VCEOVEBO Emitter-Base Voltage -5 VI Collector Current

S8550SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) SOT-23 FEATURES Complimentary to S8050 Collector current: IC=0.5A 1. BASE 2. EMITTER MARKING : 2TY 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collec

SS8550MOTPNP TRANSISTOR PNP PNP High Voltage Transistor SMD SS8550 PNP, BEC Transistor Polarity: PNP General Purpose Transistors Transistor pinout: BEC SOT-23 Package Marking Code: Y2 hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and Switching Inner circuit SS85

SS8550-Y2FeaturesSOT- 231.5AMechanical Data1500www.shunyegroup.com.cn1/4 S0S8550-Y2www.shunyegroup.com.cn2 4 SS8550-Y2www.shunyegroup.com.cn3 4 SS8550-Y2MMBTSS8550 Y2 www.shunyegroup.com.cn4 4

MMBTS8550PNP Silicon Tr ansistors Features Collector current: IC=0.5A SOT23MAXIMUM RATINGS (Ta=25 unless otherwise noted) SymbolParameter Value UnitCollectorBase Voltage -40 VCBO VVCEO -25 VCollectorEmitter Voltage(B)(C)-5 (A)EmitterBase Voltage VEBO VACollector Current Continuous IC-0.50.063 (1.60)0.027 (0.67)0.047 (1.20) 0.013 (0.

S8550 Features Complimentary to S8050 Collector current: IC=-0.5A SOT-23 AMARKING: 2TYDim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00J0.013 0.10KK0.903 1.10JMAXIMUM RATINGS (Ta=25 unless otherwise noted)L0.45 0.61M

SS8550 Features Complimentary to SS8050 Collector current: IC= -1.5A SOT-23 AMARKING: Y2Dim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00J0.013 0.10KK0.903 1.10JL0.45 0.61M0.085 0.180MAXIMUM RATINGS (Ta=25 unless othe

HMBT8550PNP-TRANSISTORPNP, 8550 PNP PNP Plastic-Encapsulate Transistors SMDHS8550, HS8550AHM8550, HMBT8550High breakdown voltageLow collector-emitter saturation voltageHSS8550, HMA6801Complementary to HMBT8050Transistor Polarity: PNP

Jiangsu Weida Semiconductor Co., Ltd. S8550NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation T

Jiangsu Weida Semiconductor Co., Ltd. SS8550Plastic-Encapsulate TransistorsTO-92PNP Silicon COLLECTOR32BASE11. EMITTER 2312. BASEEMITTER3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol SS8550 UnitCollector-Emitter Voltage VCEO -25 VdcVCBOCollector-Base Voltage -40 VdcVEBOEmitter-Base Voltage -5.0 VdcCollector CurrentAdcIC -1.5Total De