8550 - описание и поиск аналогов

8550 Rev.F Jul.-2019 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features P , I , 8050 C C High PC and IC, complementary pair with 8050. / Applications 2W 2W output amplifier of portable radios in class B push-pull operation.

March 2008 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation Features Complimentary to SS8050 Collector Current IC=1.5A Collector Power Dissipation PC=1W (TC=25 C) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-

SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8050 Collector Current IC= -1.5A Collector Dissipation PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEB

MCC MMSS8550-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8550-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plastic-Encapsulate

MCC MMSS8550-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8550-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plastic-Encapsulate Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Tra

MMSS8550W-L MCC Micro Commercial Components MMSS8550W-H TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMSS8550W-J Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plasti

MMS8550 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 PNP Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-Encapsulate Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Transistor Operating Junction Tempera

MCC MMS8550-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMS8550-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Plastic-Encapsulate Collector-

MMSS8550W-L MCC Micro Commercial Components MMSS8550W-H TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMSS8550W-J Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plasti

MCC MMS8550-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMS8550-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Plastic-Encapsulate Collector-

MCC SS8550-C TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components SS8550-D CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 1.5A Collector-base Voltage 40V Transistors Operating and storage

S8550-B MCC Micro Commercial Components TM S8550-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8550-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating a

MMSS8550W-L MCC Micro Commercial Components MMSS8550W-H TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMSS8550W-J Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plasti

M C C TM PXT8550-B Micro Commercial Components PXT8550-C Micro Commercial Components 20736 Marilla Street Chatsworth PXT8550-D CA 91311 Phone (818) 701-4933 PXT8550-D3 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Marking Y2/8550 Plas

MCC 8550SS-C TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 8550SS-D CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 1.5A Collector-base Voltage 40V Transistors Operating and storage

MCC MMSS8550-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8550-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Silicon Case Material Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking Y2 Plastic-Encapsulate Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Tra

DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor TO-92-3 CASE 135AN SS8550 1 2 3 Features 2 W Output Amplifier of Portable Radios in Class B Push-Pull Operation Complementary to SS8050 TO-92-3 Collector Current IC = 1.5 A CASE 135AR 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 3 Compliant 1. Emitter 2. Base ABSOLUTE MAXIMUM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES * Collector Current up to 1.5A * Collector-Emitter Volt

UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP 1 transistor, designed for Class B push-pull audio amplifier and TO-92 general purpose applications. FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V

UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to

UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S APPLICATIONS *Class B push-pull audio amplifier *General purpose applications TO-92 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ,unless otherwise specified )

UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH 3 CURRENT SMALL SIGNAL PNP TRANSISTOR 2 1 SOT-23 DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 FEATURES TO-92 *Collector current up to 700mA *Collector-Emitter vo

STS8550 Semiconductor Semiconductor PNP Silicon Transistor Descriptions High current application Radio in class B push-pull operation Feature Complementary pair with STS8050 Ordering Information Type NO. Marking Package Code STS8550 STS8550 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0.1 0.4 0.02 2.06 0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Conn

SPS8550 Semiconductor Semiconductor PNP Silicon Transistor Features Suitable for low voltage large current drivers High DC current gain and large current capability Complementary pair with SPS8050 Ordering Information Type NO. Marking Package Code SPS8550 SPS8550 TO-92 Outline Dimensions unit mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collecto

S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-92 4.55 0.2 3.5 0.2 (1.27 Typ.) FEATURES 1.25 0.2 1 2 3 Excellent hFE linearity 2.54 0.1 1 Emitter 2 Base 3 Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C Parameter Symbol Ratings Unit

S8550 PNP Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8050 B 1.200 1.400 1 Base C 0.890 1.110 2 Emitter Collector Current IC=0.5A D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.60

M8550 -40V, -0.8A, 200mW PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 MARKING Top View C B 1 1 2 Product Marking Code 2 K E M8550 Y21 D H J F G CLASSIFICATION OF hFE(2) Product-Rank M8550-L M8550-H Millimeter Millimeter REF. R

M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE A D Power Dissipation B E C F G H 1Emitter 1 1 1 2Base 2 2 2 3Collector 3 3 3 J Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise specified

8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G H Emitter Collector Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8550SST-B 8550SST-C 8550SST-D REF. B Min. Max. A 4.

SS8550T PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM 1 W Collector Current ICM -1.5 A 1 Collector-base voltage 2 3 V(BR)CBO - 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg - 55 C + 150 C 1. EMITTER 2 2. BASS 3 . COL

SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free Collector 3 FEATURES SOT-23 Power dissipation Collector 3 1 Dim Min Max PCM 0.3 W Base A 2.800 3.040 1 Base B 1.200 1.400 2 Collector Current Emitter C 0.890 1.110 2 ICM - 1.5 A D 0.370 0.500 Emitter G 1.780 2

SS8550W PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM -1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO - 40 V S

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Colle

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD8550 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 25 V Collector -Base Voltage VCBO 40 V Emitter Base Voltage VEBO 6.0 V Collector Current IC 2.0 A Collector Power Dissipation PC 1.0 W Operating And Storage Ju

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8550 PIN CONFIGURATION (PNP) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S8550 FEATURE Equivalent Circuit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8550 TRANS ISTOR(PNP) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage

www.jscj-elec.com AD-SS8550* series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-SS8550* series Plastic-Encapsulated Transistor AD-SS8550* series Transistor (PNP) FEATURES High Collector Current Complimentary to AD-SS8050 AEC-Q101 qualified Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-SS8550* series MAXIMUM RATINGS (T = 25 C unless otherwise speci

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 8550SS TRANSISTOR (PNP) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR (PNP) TO-92 FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 8550S=Device code Solid dot=Green molding compound device, 8550S Z if none,the normal device Z=Rank of hFE XXX=Code 1 ORDERING INFORMATION Part Number

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT8550 TRANSISTOR (PNP) 1. BASE FEATURES Compliment to PXT8050 2. COLLECTOR MARKING Y2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Bas

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550S TRANSISTOR (PNP) TO-92 FEATURES 1.EMITTER Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collecto

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT- 23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V

SEMICONDUCTOR KTC8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -35 V Collector-Base Voltage G 0.85 H 0.45 VCEO -30 V Collector-Emitter Voltage _ H J 14.0

SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. E FEATURE L B L Complementary to MPS8050S. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 Q L 0.55 P P M 0.20 M

SEMICONDUCTOR KTC8550A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8050A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage -35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage -30 V _ H J 14

SEMICONDUCTOR KTC8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8050S. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 Q L 0.55 VCBO -35 V C

SEMICONDUCTOR MPS8550SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8050SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -1,200 mA PC * Collector Power Dissipation 350 mW Tj Junctio

SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to MPS8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -40 V Collector-Base Voltage G 0.85 H 0.45 VCEO -25 V Collector-Emitter Voltage _ H J 14.0

SS8 550 TRANSISTOR(PNP) SOT-323 FEA TURES Complimentary to SS8050 1. Base MARKING Y2 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W

S8 550 S901 2 SOT-23 TRANSISTOR(PNP) FEATURES Complimentary to S8050 1. BASE Collector current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A

M8 550 TRANSISTOR(PNP) SOT-23 FEATURES Power dissipation MARKING Y21 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Ju

PXT8 550 TRANSISTOR(PNP) SOT-89 FEATURES 1. BASE Compliment to PXT8050 1 2. COLLECTOR MARKING Y2 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipati

SS8 550 TRANSISTOR(PNP) FEATURES SOT 23 High Collector Current Complementary to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector P

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

SS8550 SOT-23 Transistor(PNP) SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A

S8550 Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= -500mA). A SOT-23 Complementary To S8050. Dim Min Max A 2.70 3.10 E Excellent HFE Linearity. B 1.10 1.50 K B C 1.0 Typical D 0.4 Typical APPLICATIONS E 0.35 0.48 J D G 1.80 2.00 High Collector Current. G H 0.02 0.1 J 0.1 Typical H K 2.20 2.60 C All Dimensions in mm ORDERING INFORM

M8550(PNP) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters) PC Colle

S8550(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units -40 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters)

S8550 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current IC=0.5A MARKING 2TY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC C

PXT8550 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 Features 2.4 3.75 Compliment to PXT8050 0.8 MIN 0.53 0.40 0.48 0.44 2x) MARKING Y2 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Colle

M8550 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING Y21 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A

SS8550 Silicon Epitaxial Planar Transistor 1. BASE 2. EMITTER A SOT-23 3. COLLECTOR Dim Min Max A 2.70 3.10 E EATURES B 1.10 1.50 K B C 1.0 Typical Collector Current.(IC= 1.5A D 0.4 Typical E 0.35 0.48 J Complementary To SS8050. D G 1.80 2.00 G H 0.02 0.1 Collector Dissipation PC=0.3W (TC=25 C) J 0.1 Typical H K 2.20 2.60 C All Dimensions in mm APPLICA

SS8550(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PC 1 W (TA=25 ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Curren

8550S(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA

S8550 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. E MIT T E R 1 2 2. B A SE 3 3. COL L E CTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-E m itter Voltage V CE O -2 5 Vdc Collector-B as e Voltage VCB O -4 0 Vdc E m itter-B as e VOltage VE B O -5 . 0 Vdc Collector Current IC -5 0 0 mAdc P 0 . 6 2 5 Total Device Dis s ipation T =2 5

M8550LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http //www.weitron.com.tw M8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain -

SS8550LT1 PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 Value VCEO -25 -40 -5.0 -1500 300 2.4 417 -0.1 -25 -40 -100 -5.0 -100 -0.15 u -40 -0.15 u -5.0 WEITRON 27-Jul-2012 1/2 http //www.weitron.com.tw SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC

SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -1.5 Adc Total Device Dissipation T =25 C PD W A 1.0

SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead(Pb)-Free 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. EMITTER 3. COLLECTOR V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A SOT-323(SC-70) . PCM Power Dissipation (Tamb=25 C) W 0.2 TJ Junction Temperature -55 to +150 Tstg Storage Temperature -55 to +15

FM120-M WILLAS 8550SLT1THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers SOT-23 better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

FM120-M 8550HXLT1 WILLAS THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize b

FM120-M WILLAS 8550xLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board

Spec. No. HE6114 HI-SINCERITY Issued Date 1992.09.30 Revised Date 2006.07.28 MICROELECTRONICS CORP. Page No. 1/4 HE8550 PNP Epitaxial Planar Transistor Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature................................

Spec. No. HE6813 HI-SINCERITY Issued Date 1997.08.11 Revised Date 2004.08.17 MICROELECTRONICS CORP. Page No. 1/4 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features High DC Current hFE=150-400 at IC=150mA Complementary to HMBT8050 Absolute Maximum Ratings Maximum Temperatures Stor

Spec. No. HE6108 HI-SINCERITY Issued Date 1997.09.05 Revised Date 2004.11.23 MICROELECTRONICS CORP. Page No. 1/5 HA8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features TO-92 High total power dissipation (PT 2W, TC=25 C) High collector current (IC 1.5A)

Spec. No. HE6109 HI-SINCERITY Issued Date 1997.09.05 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 HA8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features High DC Current Gain (hFE=100 500 at IC=150mA) Complementary to HA8050S Absolute Maximum Ratings Maximum Temperatu

Spec. No. HE6129 HI-SINCERITY Issued Date 1993.01.15 Revised Date 2004.07.26 MICROELECTRONICS CORP. Page No. 1/5 HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550S is designed for general purpose amplifier applications. Features TO-92 High DC Current gain 100-500 at IC=150mA Complementary to HE8050S Absolute Maximum Ratings Maximum Temperatures

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) TO-92 FEATURE Power dissipation 1. EMITTER PCM 0.625 W (Tamb=25 ) 2. BASE Collector current 3. COLLECTOR ICM -0.5 A Collector-base voltage 1 2 3 V(BR)CBO -40 V Operating and storage junction temperature range TJ, Tstg -55 to +150

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM 0.2 W (Tamb=25 ) Collector current ICM -1.5 A Collector-base voltage V(BR)CBO -25 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELE

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.5 A Collector-base voltage V(BR)CBO -40 V Unit mm Operating and storage junction temperature range TJ, Tst

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM 1 W (TA=25 ) 3. COLLECTOR 2 W (TC=25 ) 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltag

Spec. No. C313A3-B Issued Date 2004.03.04 CYStech Electronics Corp. Revised Date 2009.02.02 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTP8550BA3 Description The BTP8550BA3 is designed for use in 2W output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complemen

Spec. No. C313A3 Issued Date 2003.07.30 CYStech Electronics Corp. Revised Date 2007.04.19 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTP8550A3 Description The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complementary to BT

Spec. No. C313N3-H Issued Date 2003.09.26 CYStech Electronics Corp. Revised Date 2009.02.02 Page No. 1/6 Low V PNP Epitaxial Planar Transistor CESAT BTP8550N3 Features Low VCE(SAT), -0.22V(typically) at IC=-500mA/IB=-50mA. Complementary to BTN8050N3. Pb-free package Symbol Outline BTP8550N3 SOT-23 B Base C Collector E Emitter Absolute Maxi

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Complimentary to SS8050 MARKING Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base

TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PC 1 W (TA=25 ) 1.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.BASE 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units 3.COLLECTOR VCBO -40 V VCBO VCBO Collector-Base Voltage VCBO ELECTRICAL ELECTRICAL ELECTRICAL EL

S8550 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features P , I , S8050 C C High PC and IC, complementary pair with S8050. / Applications Amplifier of portable radios in class B push-pull operation.

8550M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 8050M Complementary pair with 8050M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 3 1

S8550M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features S8050M Complementary pair with S8050M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning

L8550(BR3CA8550K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features PC, IC , L8050(BR3DA8050K) High PC and IC, complementary pair with L8050(BR3DA8050K). / Applications 2W 2W output amplifier of portable radios in cl

S8550MG Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features S8050MG Complementary pair with S8050MG.HF Product. / Applications Power amplifier applications. / Equivalent Circu

3CA8550 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features P , I , 3DA8050 C C High PC and IC, complementary pair with 3DA8050. / Applications 2W 2W output amplifier of portable radios in class B push-pull opera

S8550W(BR3CG8550W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 PNP Silicon PNP transistor in a SOT-323 Plastic Package. / Features S8050W(BR3CG8050W) Complementary pair with S8050W(BR3CG8050W). / Applications Power amplifier applications. / Equivalent Cir

8550W(BR3CA8550W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 PNP Silicon PNP transistor in a SOT-323 Plastic Package. / Features 8050W(BR3DA8050W) Complementary pair with 8050W(BR3DA8050W). / Applications Power amplifier applications. / Equivalent Circui

L8550M Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features L8050M Complementary pair with L8050M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 3 2

S8550A(BR3CG8550AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features PC, IC , S8050A(BR3DG8050AK) High PC and IC, complementary pair with S8050A(BR3DG8050AK). / Applications Amplifier of portable radios in class B pu

8550T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 8050T Complementary pair with 8050T. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 1 2

8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage

MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Bas

8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Co

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

LESHAN RADIO COMPANY, LTD. L8550HPLT1G General Purpose Transistors Series PNP Silicon S-L8550HPLT1G Series FEATURE High current capacity in compact package. Epitaxial planar type. 3 PNP complement L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirem

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550PLT1G Series PNP Silicon S-L8550PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION SOT

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550PLT1G Series PNP Silicon S-L8550PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION SOT

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550PLT1G Series PNP Silicon S-L8550PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION SOT

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8550PLT1G PNP Silicon Series FEATURE S-LH8550PLT1G High current capacity in compact package. Series IC =-1.5A. Epitaxial planar type. PNP complement LH8550 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550PLT1G Series PNP Silicon S-L8550PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION SOT

LESHAN RADIO COMPANY, LTD. L8550HPLT1G General Purpose Transistors Series S-L8550HPLT1G PNP Silicon FEATURE Series High current capacity in compact package. Epitaxial planar type. 3 PNP complement L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8550PLT1G PNP Silicon Series FEATURE S-LH8550PLT1G High current capacity in compact package. Series IC =-1.5A. Epitaxial planar type. PNP complement LH8550 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8550PLT1G PNP Silicon Series FEATURE S-LH8550PLT1G High current capacity in compact package. Series IC =-1.5A. Epitaxial planar type. PNP complement LH8550 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8550PLT1G PNP Silicon Series FEATURE S-LH8550PLT1G High current capacity in compact package. Series IC =-1.5A. Epitaxial planar type. PNP complement LH8550 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements; AEC-Q101 Qualified and

Shantou Huashan Electronic Devices Co.,Ltd. H8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Junction Temperature 150 PC Collector Dissipation

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Juncttion Temperature 150 PC Collector Dissipation

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Juncttion Temperature 150 PC Collector Dissipation

SEMICONDUCTOR FTA8550H TECHNICAL DATA General Purpose Transistors PNP Silicon FEATURE 3 High current capacity in compact package. I C =-1.5A. 1 Epitaxial planar type. 2 PNP complement FTC8050H Pb-Free Package is available. SOT 23 DEVICE MARKING AND ORDERING INFORMATION COLLECTOR 3 Shipping Device Marking 1 FTA8550H 1FD 3000/Tape&Reel BASE 2 EM

S8550G Plastic-Encapsulate Transistors Simplified outline S8550G TRANSISTOR NPN TO-92 Features Power dissipation 1.EMITTER PCM 0.625 W Tamb=25 Collector current 2. COLLECTOR ICM -0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO -40 V Operating and storage junction temperature range TJ Tstg -55 to +150 Electrical Characteristic

FF8550HQLG Plastic-Encapsulate Transistors Simplified outline FF8550HQLG TRANSISTOR PNP) SOT-23 Features 3 Complimentary to F8050HQLG High Collector Current 1 1. BASE 2. EMITTER 2 3. COLLECTOR Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Vol

SS8550G Plastic-Encapsulate Transistors Simplified outline SS8550G TRANSISTOR NPN TO-92 Features Power dissipation 1.EMITTER PC 1 W (Ta=25 ) 2.BASE 3.COLLECTOR 123 Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Coll

SMD Type Transistors SMD Type PNP Transistors KST8550D-50 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-1.2A Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V C

SMD Type Transistors PNP Transistors H8550 Features 1.70 0.1 Collector Power Dissipation PC=0.5W Collector Current IC=-1.5A Comlementary to H8050 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -

SMD Type Transistors SMD Type PNP Transistors KST8550S SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector current IC-=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage V

SMD Type Transistors SMD Type PNP Transistors KST8550 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current IC=-1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEB

SMD Type Transistors SMD Type PNP Transistors KST8550D SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features 1 2 Collector Current IC=-1.5A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage

SMD Type Transistors PNP Transistors H8550D Features 1.70 0.1 Collector Power Dissipation PC=0.5W Collector Current IC=-1.5A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current IC -1

SMD Type Transistors PNP Transistors KST8550X SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Power Dissipation PC=0.3W Collector Current IC=-1.5A 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emit

SMD Type SMD Type Transistors PNP Transistors KST8550M SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current IC=-0.8A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-

CHENMKO ENTERPRISE CO.,LTD CHT8550GP SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. (SOT-23) * High DC current . SOT-23 CONSTRUCTION (1) * PNP transistors in one package. (3) (2) ( ) ( ) .055 1.40 .028 0.70 ( ) ( ) .047 1.20 .020 0.50 ( ) .103 2.64 .086 (2.20) ( ) .045 1.15 C (3) CIRCUIT ( ) .033 0.85 (1

DC COMPONENTS CO., LTD. DMBT8550 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 .045(1.15) Absolute Maximum Ratings(TA=25oC) .034(0.85) .091(2.30)

DC COMPONENTS CO., LTD. DC8550 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) 1 = Emitter .170(4.33) 2 = Base 2oTyp 3 = Collector .190(4.83) .170(4.33) 2oTyp Absolute Maximum Ratings(TA=25oC) .500 Characterist

TRANSISTOR S8550DA MAIN CHARACTERISTICS FEATURES IC -1.5A Epitaxial silicon VCEO -45V High switching speed PC 1W S8050DA Complementary to S8050DA RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power am

S8550A(3CG8550A) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8050A(3DG8050A) C C Features High P and I , complementary pair with S8050A(3DG8050A). C C /Absolute maximum ratings(Ta=25 ) Symbol Rati

S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR /Purpose Power amplifier applications. S8050M(3DG8050M) /Features Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA

S8550(3CG8550) PNP /SILICON PNP TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8050(3DG8050) C C Features High P and I , complementary pair with S8050(3DG8050). C C /Absolute maximum ratings(Ta=25 ) Symbol Rating Uni

Product specification PNP Silicon Epitaxial Planar Transistor S8550 FEATURES Pb High Collector Current.(I = -500mA). C Lead-free Complementary To S8050. Excellent H Linearity. FE APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S8550 2TY SOT-23 none is for Lead Free package; G is for

Production specification PLASTIC-ENCAPSULATE TRANSISTORS PXT8550 FEATURES Commplimentray to PXT8050 Pb Lead-free SOT-89 ORDERING INFORMATION Type No. Marking Package Code PXT8550 8550 SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Vol

Product specification PNP Silicon Epitaxial Planar Transistor SS8550 EATURES Pb Collector Current.(I = 1.5A C Lead-free Complementary To SS8050. Collector Dissipation P =0.3W (T =25 C) C C APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SS8550 Y2 SOT-23 none is for Lead Free package;

KS8550L PNP Silicon Transistor Descriptions PIN Connection High current application Features Complementary pair with KS8050L Ordering Information Type NO. Marking Package Code KU KS8550L SOT-23 Device Code HFE Grade Year& Week Code AUK Dalian Absolute maximum ratings Ta=25 C Characteristic Symbol Ratings Unit Collector-Base

PT23T8550 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualified max reflow temperature 260 Device meets MSL 1 requirements Pure tin plating 7 17 um Pin flatness 3mil Structu

S8550 SOT-23 TRANSISTOR(PNP) FEATURES Complimentary to S8050 1. BASE Collector current IC=0.5A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissip

SS8550 TRANSISTOR(PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Dissipati

SS8550W PNP Transistors Features 3 High Collector Current Complementary to SS8050W 2 1.Base 2.Emitter 3.Collector 1 Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A PC Collector Power D

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R UMW UMW S8550 SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Complimentary to S8050 3. COLLECTOR Collector current IC=0.5A MARKING 2TY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Volta

R UMW UMW SS8550 SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EB

RoHS MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT8050LT1 1. 1.BASE Collector-current Ic=-500mA 2.EMITTER High Total Power Dissipation Pc=225mW 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage

MMBT8550C/D Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages As complementary type of the NPN transistor MMBT8050C/D is recommended Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base V

S8550 General Purpose Transistors PNP Silicon Package outline Features High current capacity in compact package IC = -0.5A. SOT-23 Epitaxial planar type Pb-free package is available Suffix "-H" indicates Halogen-free part, ex.S8550 -H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) 0.108 (2.75) Mechanical data 0.083 (2.10) Epoxy UL94-V0 ra

1.5A 1500 http //www.anbonsemi.com Document ID Issued Date Revised Date Revision Page. TEL 886-755-23776891 AS-3140127 2013/03/08 2016/05/16 D 4 FAX 886-755-81482182 http //www.anbonsemi.com Document ID Issued Date Revised Date Revision Page. TEL 886-755-23776891 AS-3140127 2013/03/08 2016/05/16 D 4 FAX 886-755-81482182 http //www.anbonsemi.com Document ID Issued Date Revised Dat

S8550 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 Features Complimentary to S8050 Collector Current I =0.5A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Units Symbol Value Parameter V 1. BASE VCBO Collector-Base Voltage -40 V 2. EMITTER VCEO Collector-Emitter Voltage -25 3. COLLECTOR V VEBO Emitt

M8550 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 Features Complimentary to M8050 Collector Current I =0.8A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Units Symbol Value Parameter V 1. BASE VCBO Collector-Base Voltage -40 V 2. EMITTER VCEO Collector-Emitter Voltage -25 3. COLLECTOR V VEBO Emitter-Bas

SS8550 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 High Collector Current Complementary to SS8050 Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO 2. EMITTER -25 V V Collector-Emitter Voltage CEO 3. COLLECTOR V Emitter-Ba

FEATURES High Collector Current SOT-23 Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To Ambient 417

1.5A 1500 Document ID Issued Date Revised Date Revision Page. FM-3140127 2013/03/08 2016/05/16 D 4 Document ID Issued Date Revised Date Revision Page. FM-3140127 2013/03/08 2016/05/16 D 4 Document ID Issued Date Revised Date Revision Page. FM-3140127 2013/03/08 2016/05/16 D 4 SS8550 Y2 Document ID Issued Date Revised Date Revision Page. FM-3140127 2013/03/08 2016/05/16 D 4

SS8550 HD ST 0.52 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Complimentary to SS8050 Collector Current IC=-1.5A Marking Y2 Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -25 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current C -1.5 A P Collector Power Dissipation 3

S8550 PNP Silicon General Purpose Transistor TO-92 4.55 0.2 3.5 0.2 (1.27 Typ.) FEATURES 1.25 0.2 1 2 3 Complimentary to S8050 2.54 0.1 Collector Current IC = 0.5A 1 Emitter 2 Base 3 Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitte

SS8550 TO-92 Plastic-Encapsulate Transistors TRANSISTOR ( ) 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit SS8550= Device code TO-92 Bulk 1000pcs/Bag S SS8550 Tape 2000pcs/Box Collector-Base Voltage -40 V Collector-Emitter Voltage -25 V Emitter-Base Voltage -5 V Collector Current -Continuous -1.5 A Collector Power Dissipation mW Thermal Resistance rom Junction o Ambi

S8550 SOT-23 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) SOT-23 FEATURES Complimentary to S8050 Collector Current IC=0.5A 1. BASE MARKING 2TY 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO VEBO Emitter-Base Voltage -5 V IC

SS8 550 TRANSISTOR(PNP) FEATURES SOT 23 High Collector Current Complementary to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector P

www.msksemi.com SS8550-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Collector Current Complementary to SS8050-MS 1. BASE 2. EMITTER SOT 23 MARKING Y2 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO VCEO Collector-Emitter Voltage -25 V VEBO Emi

www.msksemi.com S8550-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Complimentary to S8050-MS 1. BASE Collector current IC=0.5A 2. EMITTER SOT 23 3. COLLECTOR MARKING 2TY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-B

S8550 PLASTIC-ENCAPSULATE TRANSISTORS PNP Silicon FEATURES Collector Current IC = -0.5A MECHANICAL DATA C Available in SOT-23 Package E Solderability MIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE S8550 - -T3 SOT-23 Tape Reel 2TY Notes 1. none is for Lead Free package;

SS8550 PLASTIC-ENCAPSULATE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C E B MECHANICAL DATA Available in SOT-23, SOT-323, TO-92 Package C Solderability MIL-STD-202, Method 208 E Full RoHS Compliance B E B C ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE SS8550 - -T

MMBT8550-1.5A PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. Especially Suitable for AF-Driver Stages and Low Power Output Stages. As Complementary Type of the NPN Transistor MMBT8050-1.5A is Recommended. 1.Base 2.Emitter 3.Collector Marking -C X2 -D Y2 Absolute Maximum Ratings Ratings at 25 ambient temperature unless other

MMBT8550 PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the NPN Transistor MMBT8050 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collector Emitter Voltage

S8550 S8550 SOT-23 PNP TRANSISTOR 3 FEATURES Complimentary to S8050 Collector current IC=0.5A 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE 2.EMITTER Collector Base Voltage -40 VCBO V 3.COLLECTOR VCEO -25 V Collector Emitter Voltage -5 Emitter Base Voltage VEBO V A Collector Current Continuous IC -0.5 PC

SS8550 SS8550 SOT-23 PNP TRANSISTOR 3 FEATURES High Collector Current Complementary to SS8050 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Parameter Symbol Value Unit 1.BASE 2.EMITTER Collector Base Voltage VCBO -40 V 3.COLLECTOR Collector Emitter Voltage VCEO -25 V Emitter Base Voltage VEBO -5 V IC -1.5 A Collector Current Continuous Co

Jingdao Microelectronics co.LTD S8550 S8550 SOT-23 PNP TRANSISTOR 3 FEATURES Complimentary to S8050 Collector current IC=0.5A 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE 2.EMITTER Collector Base Voltage -40 VCBO V 3.COLLECTOR VCEO -25 V Collector Emitter Voltag

Jingdao Microelectronics co.LTD SS8550 SS8550 SOT-23 PNP TRANSISTOR 3 FEATURES High Collector Current Complementary to SS8050 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Parameter Symbol Value Unit 1.BASE 2.EMITTER Collector Base Voltage VCBO -40 V 3.COLLECTOR Collector Emitter Voltage VCEO -25 V

S8 550 SOT-23 TRANSISTOR(PNP) FEATURES Complimentary to S8050 1. BASE Collector current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Colle

SS8 550 TRANSISTOR(PNP) FEATURES SOT 23 High Collector Current Complementary to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector

Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= -500mA Complementary To S8050. Excellent HFE Linearity. APPLICATIONS High Collector Current. ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified 1 of 3 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) 2 of 3 TYPICAL CHARAC

PXT8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 1.5 A Power Dissipation Ptot

Integrated in OVP&OCP products provider S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 1 BASE Collector current IC=0.8A 2 EMITTER 3 COLLECTOR MARKING 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC

Integrated in OVP&OCP products SS8550 provider SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Complimentary to SS8050 MARKING Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -40 V VCEO Collector

S8550 SOT-23 PNP Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector Collector current IC-=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.5 A Collector Power Dissipation PC 0.3 W Junct

SS8550 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter Collector Current IC=-1.5A 1 3.Collector Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1.5 A Collector Power Dissipation PC 0.3 W Junc

L8550HQ General Purpose Transistors PNP Silicon FEATURE COLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V -25 V CEO Collector-Base Voltage VCBO -40 V Emitter-Base Voltage VEBO -5 V Collecto

SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Diss

S8550 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8050 ; Complementary to S8050 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

SS8550 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8050 ; Complementary to SS8050 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

S8550 S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 Collector current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Coll

PXT8550 PXT8550 PXT8550 PXT8550 TRANSISTOR (PNP) SOT-89 FEATURES Compliment to PXT8050 MARKING Y2 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO VCEO Collector-Emitter Voltage -25 V V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -1.5 A C P Collector Power

SS8550W SS8550W SS8550W SS8550W TRANSISTOR(PNP) SS8 550 W SOT 323 3 FEATURES Complimentary to SS8050W 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC

SS8550 SS8550 TRANSISTOR PNP FEATURES Complimentary to SS8050 SOT-23 1 BASE MARKING Y2 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation

RoHS RoHS COMPLIANT COMPLIANT S8550-L THRU S8550-H PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking S8550-L 2TY L S8550-H 2TY Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Colle

RoHS COMPLIANT SS8550-L THRU SS8550-H PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking SS8550-L Y2 L SS8550-H Y2 Off Characteristics Item Symbol Unit Conditions Value Collector-Emitter Voltage VCEO V IC=-100uAdc, IB=

S8550 S8550 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8050 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking 2TY Maximum Ratings & Thermal Characteristics TA = 25 C unle

SS8550 SS8550 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8050 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking Y2 Maximum Ratings & Thermal Characteristics TA = 25 C unl

S8550T TRANSISTOR (PNP) SOT-523 FEATURES Complimentary to S8050T 1. BASE 2. EMITTER Collector current IC=0.5A 3. COLLECTOR MARKING 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Pow

S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 1 BASE Collector current IC=0.5A 2 EMITTER 3 COLLECTOR MARKING 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Co

SOT-89Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Compliment to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -1.5 A C P Collector Power Dissipation 0.5 W C Thermal Resist

TRANSISTOR PNP SS8550W SOT 323 FEATURES Complimentary to SS8050W 1. BASE 2. EMITTER 3. COLLECTOR MARKING Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W

FHTA8550-ME PNP Transistor DESCRIPTIONS SOT-23 PNP PNP transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Addition

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD S8550 (T =25 ) a CHARACTERISTIC Symbol Rating Unit Collector-Base Voltage V -40 Vdc CBO - Collect-Emitter Voltage V -25 Vdc CEO - Emitter-Base Voltage V -5.0 Vdc EBO - C

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD SS8550 FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to SS8050 SS8050 (Ta=25 ) CHARACTERISTIC Symbol Rating Unit Collector-Base Voltage VCB

S8550 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-25V. Collector current IC=-0.5A. ansition frequency fT>150MHz @ IC=- Tr 20mAdc, VCE=-6Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic Terminals Solder

SS8550 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-25V. Collector current IC=-1.5A. ansition frequency fT>100MHz @ IC=- Tr 50mAdc, VCE=-10Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic Terminals Sold

S8550 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to S8050 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol

PXT8550 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to PXT8050 Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V -40 V CBO Collec

SS8550 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to SS8050 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol

PNP S8550 S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 1 BASE Collector current IC=0.5A 2 EMITTER 3 COLLECTOR MARKING 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Ba

R S8550 S E M I C O N D U C T O R TRANSISTOR(PNP) SOT-23 FEATURES Complimentary to S8050 1. BASE Collector current I =0.5A C 2. EMITTER 3. COLLECTOR MARKING 2TY MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO VEBO Emitter-Base Voltage -5 V I Collector Current

S8550 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) SOT-23 FEATURES Complimentary to S8050 Collector current IC=0.5A 1. BASE 2. EMITTER MARKING 2TY 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collec

SS8550 MOT PNP TRANSISTOR PNP PNP High Voltage Transistor SMD SS8550 PNP, BEC Transistor Polarity PNP General Purpose Transistors Transistor pinout BEC SOT-23 Package Marking Code Y2 hFE 100 200, 200 300 Ldeal for Medium Power Amplification and Switching Inner circuit SS85

SS8550-Y2 Features SOT- 23 1.5A Mechanical Data 1500 www.shunyegroup.com.cn 1/4 S0S8550-Y2 www.shunyegroup.com.cn 2 4 SS8550-Y2 www.shunyegroup.com.cn 3 4 SS8550-Y2 MMBTSS8550 Y2 www.shunyegroup.com.cn 4 4

MMBTS8550 PNP Silicon Tr ansistors Features Collector current IC=0.5A SOT23 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector Base Voltage -40 VCBO V VCEO -25 V Collector Emitter Voltage (B) (C) -5 (A) Emitter Base Voltage VEBO V A Collector Current Continuous IC -0.5 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.

S8550 Features Complimentary to S8050 Collector current IC=-0.5A SOT-23 A MARKING 2TY Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J 0.013 0.10 K K 0.903 1.10 J MAXIMUM RATINGS (Ta=25 unless otherwise noted) L 0.45 0.61 M

SS8550 Features Complimentary to SS8050 Collector current IC= -1.5A SOT-23 A MARKING Y2 Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J 0.013 0.10 K K 0.903 1.10 J L 0.45 0.61 M 0.085 0.180 MAXIMUM RATINGS (Ta=25 unless othe

HMBT8550 PNP-TRANSISTOR PNP, 8550 PNP PNP Plastic-Encapsulate Transistors SMD HS8550, HS8550A HM8550, HMBT8550 High breakdown voltage Low collector-emitter saturation voltage HSS8550, HMA6801 Complementary to HMBT8050 Transistor Polarity PNP

Jiangsu Weida Semiconductor Co., Ltd. S8550 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation T

Jiangsu Weida Semiconductor Co., Ltd. SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc VCBO Collector-Base Voltage -40 Vdc VEBO Emitter-Base Voltage -5.0 Vdc Collector Current Adc IC -1.5 Total De