8550 Datasheet, Equivalent, Cross Reference Search

Type Designator: 8550

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: TO92

8550 Transistor Equivalent Substitute - Cross-Reference Search

8550 Datasheet (PDF)

1.1. s8550g.pdf Size:824K _update

S8550G Plastic-Encapsulate Transistors Simplified outline S8550G TRANSISTOR（ NPN ） TO-92 Features Power dissipation 1.EMITTER PCM : 0.625 W（Tamb=25℃） Collector current 2. COLLECTOR ICM : -0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO : -40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ Electrical Characteristic

1.2. 3cg8550m s8550m.pdf Size:136K _update

S8550M(3CG8550M) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于功率放大电路。/Purpose: Power amplifier applications. 特点:与 S8050M(3DG8050M)互补。/Features: Complementary pair with S8050M(3DG8050M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数值单位 Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA

1.3. ss8550-c-d.pdf Size:196K _update

MCC SS8550-C TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components SS8550-D CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. PNP Silicon • Collector-current 1.5A • Collector-base Voltage 40V Transistors • Operating and storage

1.4. s8550b s8550c s8550d.pdf Size:177K _update

S8550-B MCC Micro Commercial Components TM S8550-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8550-D Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. PNP Silicon • Collector-current 0.5A • Collector-base Voltage 40V Transistors • Operating a

1.5. pxt8550-b-c-d-d3.pdf Size:325K _update

M C C TM PXT8550-B Micro Commercial Components PXT8550-C Micro Commercial Components 20736 Marilla Street Chatsworth PXT8550-D CA 91311 Phone: (818) 701-4933 PXT8550-D3 Fax: (818) 701-4939 Features • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating PNP Silicon • Moisture Sensitivity Level 1 • Marking:Y2/8550 Plas

1.6. ss8550g.pdf Size:1061K _update

SS8550G Plastic-Encapsulate Transistors Simplified outline SS8550G TRANSISTOR（ NPN ） TO-92 Features Power dissipation 1.EMITTER PC : 1 W (Ta=25 ) ℃ 2.BASE 3.COLLECTOR 123 Maximum Ratings(T a=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Coll

1.7. mps8550sc.pdf Size:603K _update

SEMICONDUCTOR MPS8550SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ·Complementary to MPS8050SC. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -1,200 mA PC * Collector Power Dissipation 350 mW Tj Junctio

1.8. l8550hslt1g.pdf Size:83K _upd

LESHAN RADIO COMPANY, LTD. L8550HPLT1G General Purpose Transistors Series S-L8550HPLT1G PNP Silicon FEATURE Series High current capacity in compact package. Epitaxial planar type. 3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

1.9. m8550s.pdf Size:346K _upd

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550S TRANSISTOR (PNP) TO-92 FEATURES 1.EMITTER Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3.BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collecto

1.10. mmbt8550.pdf Size:332K _upd

Tel/Fax: +86 (0)769 82827329 Skype: topdiode Email: info@topdiode.com Website: www.topdiode.com Tel/Fax: +86 (0)769 82827329 Skype: topdiode Email: info@topdiode.com Website: www.topdiode.com

1.11. mmbt8550lt1.pdf Size:131K _upd

RoHS MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT8050LT1 1. 1.BASE Collector-current:Ic=-500mA 2.EMITTER High Total Power Dissipation:Pc=225mW 2.4 3.COLLECTOR 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage

1.12. mmss8550w-j.pdf Size:187K _upd

MMSS8550W-L MCC Micro Commercial Components MMSS8550W-H TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMSS8550W-J Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Halogen free available upon request by adding suffix "-HF" PNP Silicon • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 • Marking:Y2 Plasti

1.13. cht8550gp.pdf Size:67K _upd

CHENMKO ENTERPRISE CO.,LTD CHT8550GP SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. (SOT-23) * High DC current . SOT-23 CONSTRUCTION (1) * PNP transistors in one package. (3) (2) ( ) ( ) .055 1.40 .028 0.70 ( ) ( ) .047 1.20 .020 0.50 ( ) .103 2.64 .086 (2.20) ( ) .045 1.15 C (3) CIRCUIT ( ) .033 0.85 (1

1.14. mmt8550.pdf Size:207K _upd

1.15. mms8550-l.pdf Size:183K _upd

MCC MMS8550-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMS8550-H CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Plastic-Encapsulate • Collector-

1.16. lh8550plt1g.pdf Size:157K _upd

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8550PLT1G PNP Silicon Series FEATURE S-LH8550PLT1G High current capacity in compact package. Series IC =-1.5A. Epitaxial planar type. PNP complement: LH8550 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements; AEC-Q101 Qualified and

1.17. dmbt8550.pdf Size:77K _upd

DC COMPONENTS CO., LTD. DMBT8550 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 .045(1.15) Absolute Maximum Ratings(TA=25oC) .034(0.85) .091(2.30)

1.18. mmss8550-h.pdf Size:153K _upd

MCC MMSS8550-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8550-H CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP Silicon • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 • Marking:Y2 Plastic-Encapsulate • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Tra

1.19. 8550c.pdf Size:143K _upd

SUNROC 8550C TRANSISTOR(PNP) MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) 1. EMITTER Symbol Parameter Value Units Collector-Base Voltage 2. BASE VCBO -40 V Collector-Emitter Voltage -25 VCEO V 3. COLLECTOR Emitter-Base Voltage VEBO -5 V Collector Current IC -0.5 A Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Storag Temperature -55～150 �

1.20. mms8550-h.pdf Size:183K _upd

1.21. 8550ss.pdf Size:230K _upd

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8550SS TRANSISTOR (PNP) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-

1.22. mmss8550-l.pdf Size:153K _upd

1.23. ff8550hplg ff8550hqlg.pdf Size:1005K _upd

FF8550HQLG Plastic-Encapsulate Transistors Simplified outline FF8550HQLG TRANSISTOR（PNP) SOT-23 Features 3 Complimentary to F8050HQLG High Collector Current 1 1. BASE 2. EMITTER 2 3. COLLECTOR Maximum Ratings(T a=25℃ unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Vol

1.24. mmss8550w-h.pdf Size:187K _upd

1.25. pt23t8550.pdf Size:113K _upd

PT23T8550 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

1.26. 8550ss-c 8550ss-d.pdf Size:366K _upd

MCC 8550SS-C TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 8550SS-D CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. PNP Silicon • Collector-current 1.5A • Collector-base Voltage 40V Transistors • Operating and storage

1.27. mmss8550w-l.pdf Size:187K _upd

1.28. dc8550.pdf Size:64K _update_bjt

DC COMPONENTS CO., LTD. DC8550 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) 1 = Emitter .170(4.33) 2 = Base 2oTyp 3 = Collector .190(4.83) .170(4.33) 2oTyp Absolute Maximum Ratings(TA=25oC) .500 Characterist

1.29. ss8550.pdf Size:347K _fairchild_semi

SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. � Complimentary to SS8050 � Collector Current: IC=1.5A � Collector Power Dissipation: PC=2W (TC=25�C) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collec

1.30. ss8550.pdf Size:64K _samsung

SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. � Complimentary to SS8050 � Collector Current IC= -1.5A � Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V C

1.31. he8550.pdf Size:156K _utc

UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES * Collector Current up to 1.5A * Collector-Emitter Voltage up

1.32. s8550.pdf Size:138K _utc

UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR ? DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP 1 transistor, designed for Class B push-pull audio amplifier and TO-92 general purpose applications. ? FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Com

1.33. he8550l.pdf Size:21K _utc

UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC

1.34. utc8550s.pdf Size:22K _utc

UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S APPLICATIONS *Class B push-pull audio amplifier *General purpose applications TO-92 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25�C ,unless otherwise specified ) PARA

1.35. 8550s.pdf Size:182K _utc

UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH 3 CURRENT SMALL SIGNAL 1 PNP TRANSISTOR 2 SOT-23 DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES 1 *Collector current up to 700mA TO-92 *Collector-Emitter voltage up

1.36. sta8550sf.pdf Size:279K _auk

STA8550SF PNP Silicon Transistor Descriptions PIN Connection • High current application • Radio in class B push-pull operation 3 Feature 1 • Complementary pair with STC8050SF 2 SOT-23F Ordering Information Type NO. Marking Package Code 8B ? ? STA8550SF SOT-23F ? ? ? ?Device Code ?hFE Rank ?Year&Week Code Absolute Maximum Ratings (Ta=25°C) Characteristi

1.37. sps8550.pdf Size:187K _auk

SPS8550 Semiconductor Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with SPS8050 Ordering Information Type NO. Marking Package Code SPS8550 SPS8550 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector

1.38. sts8550.pdf Size:96K _auk

STS8550 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8050 Ordering Information Type NO. Marking Package Code STS8550 STS8550 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connect

1.39. 8550sst.pdf Size:344K _secos

8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8550SST-B 8550SST-C 8550SST-D REF. B Min. Max. A 4.40 4.70 Ra

1.40. m8550t.pdf Size:818K _secos

M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE A D Power Dissipation B E C F G H 1Emitter 1 1 1 2Base 2 2 2 3Collector 3 3 3 J Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

1.41. ss8550.pdf Size:329K _secos

SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 FEATURES SOT-23 Power dissipation Collector 3 1 Dim Min Max PCM : 0.3 W Base A 2.800 3.040 1 Base B 1.200 1.400 2 Collector Current Emitter C 0.890 1.110 2 ICM : - 1.5 A D 0.370 0.500 Emitter G 1.780 2.04

1.42. s8550.pdf Size:196K _secos

S8550 PNP Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8050 B 1.200 1.400 1 Base C 0.890 1.110 2 Emitter Collector Current: IC=0.5A D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600

1.43. m8550.pdf Size:738K _secos

M8550 -40V, -0.8A, 200mW PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 MARKING Top View C B 1 1 2 Product Marking Code 2 K E M8550 Y21 D H J F G CLASSIFICATION OF hFE(2) Product-Rank M8550-L M8550-H Millimeter Millimeter REF. REF.

1.44. ss8550t.pdf Size:105K _secos

SS8550T PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : -1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : - 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLEC

1.45. s8550t.pdf Size:343K _secos

S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 4.55 0.2 3.5 0.2 (1.27 Typ.) FEATURES 1.25 0.2 1 2 3 Excellent hFE linearity 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Co

1.46. ss8550w.pdf Size:115K _secos

SS8550W PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : -1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : - 40 V S To

1.47. cmbt8550 c d e.pdf Size:276K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8550 PIN CONFIGURATION (PNP) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage VEBO

1.48. cd8550.pdf Size:173K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD8550 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 25 V Collector -Base Voltage VCBO 40 V Emitter Base Voltage VEBO 6.0 V Collector Current IC 2.0 A Collector Power Dissipation PC 1.0 W Operating And Storage Junct

1.49. cn8050 cn8550 c d.pdf Size:227K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Collecto

1.50. ktc8550.pdf Size:69K _kec

SEMICONDUCTOR KTC8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -35 V Collector-Base Voltage G 0.85 H 0.45 VCEO -30 V Collector-Emitter Voltage _ H J 14.00 +

1.51. ktc8550a.pdf Size:360K _kec

SEMICONDUCTOR KTC8550A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to KTC8050A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25℃) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage -35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage -30 V _ H J 14

1.52. ktc8550s.pdf Size:393K _kec

SEMICONDUCTOR KTC8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8050S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 VCBO -35 V Collector-Base

1.53. mps8550s.pdf Size:390K _kec

SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8050S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO -40 V Collecto

1.54. mps8550.pdf Size:45K _kec

SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25℃) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -40 V Collector-Base Voltage G 0.85 H 0.45 VCEO -25 V Collector-Emitter Voltage _ H J 14.0

1.55. ss8550b.pdf Size:797K _htsemi

SS8 550 TRANSISTOR(PNP) SOT-323 FEA TURES Complimentary to SS8050 1. Base MARKING: Y2 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W Tj J

1.56. s8550.pdf Size:978K _htsemi

S8 550 S901 2 SOT-23 TRANSISTOR(PNP) FEATURES Complimentary to S8050 1. BASE Collector current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Co

1.57. m8550.pdf Size:721K _htsemi

M8 550 TRANSISTOR(PNP) SOT-23 FEATURES Power dissipation MARKING: Y21 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Junctio

1.58. pxt8550.pdf Size:477K _htsemi

PXT8 550 TRANSISTOR(PNP) SOT-89 FEATURES 1. BASE Compliment to PXT8050 1 2. COLLECTOR MARKING: Y2 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.

1.59. s8550a.pdf Size:292K _gsme

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.60. mmt8550.pdf Size:292K _gsme

1.61. ss8550.pdf Size:292K _gsme

1.62. s8550.pdf Size:292K _gsme

1.63. m8550.pdf Size:292K _gsme

1.64. 8550s to-92.pdf Size:166K _lge

8550S(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC

1.65. m8550 sot-23.pdf Size:414K _lge

M8550 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC

1.66. ss8550 sot-23.pdf Size:242K _lge

SS8550 SOT-23 Transistor(PNP) SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC

1.67. s8550 sot-23.pdf Size:217K _lge

S8550 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collec

1.68. m8550 to-92.pdf Size:189K _lge

M8550(PNP) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters) PC Collector

1.69. ss8550 to-92.pdf Size:177K _lge

SS8550(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PC : 1 W (TA=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current-Conti

1.70. s8550 to-92.pdf Size:180K _lge

S8550(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units -40 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters) PC C

1.71. pxt8550.pdf Size:232K _lge

PXT8550 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 Features 2.4 3.75 Compliment to PXT8050 0.8 MIN 0.53 0.40 0.48 0.44 2x) MARKING: Y2 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-

1.72. ss8550.pdf Size:166K _wietron

SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -1.5 Adc Total Device Dissipation T =25 C PD W A 1.0 Jun

1.73. s8550.pdf Size:1656K _wietron

S8550 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. E MIT T E R 1 2 2. B A SE 3 3. COL L E CTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-E m itter Voltage V CE O -2 5 Vdc Collector-B as e Voltage VCB O -4 0 Vdc E m itter-B as e VOltage VE B O -5 . 0 Vdc Collector Current IC -5 0 0 mAdc P 0 . 6 2 5 Total Device Dis s ipation T =2 5 C W

1.74. m8550lt1.pdf Size:429K _wietron

M8550LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http://www.weitron.com.tw M8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC

1.75. ss8550lt1.pdf Size:165K _wietron

SS8550LT1 PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 Value VCEO -25 -40 -5.0 -1500 300 2.4 417 -0.1 -25 -40 -100 -5.0 -100 -0.15 u -40 -0.15 u -5.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Cur

1.76. ss8550w.pdf Size:264K _wietron

SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead(Pb)-Free 1 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. EMITTER 3. COLLECTOR V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A SOT-323(SC-70) . PCM Power Dissipation (Tamb=25°C) W 0.2 TJ Junction Temperature -55 to +150 ? Tstg Storage Temperature -55 to +150 ? EL

1.77. 8550slt1.pdf Size:500K _willas

FM120-M WILLAS 8550SLT1THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers SOT-23 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to

1.78. 8550plt1 8550qlt1 8550rlt1.pdf Size:412K _willas

FM120-M WILLAS 8550xLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board spa

1.79. 8550hxlt1.pdf Size:490K _willas

FM120-M 8550HXLT1 WILLAS THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize boar

1.80. ha8550s.pdf Size:55K _hsmc

Spec. No. : HE6109 HI-SINCERITY Issued Date : 1997.09.05 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 HA8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8050S Absolute Maximum Ratings • Maximum Temperatures

1.81. he8550.pdf Size:46K _hsmc

Spec. No. : HE6114 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2006.07.28 MICROELECTRONICS CORP. Page No. : 1/4 HE8550 PNP Epitaxial Planar Transistor Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature...................................

1.82. ha8550.pdf Size:52K _hsmc

Spec. No. : HE6108 HI-SINCERITY Issued Date : 1997.09.05 Revised Date : 2004.11.23 MICROELECTRONICS CORP. Page No. : 1/5 HA8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features TO-92 • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) •

1.83. hmbt8550.pdf Size:39K _hsmc

Spec. No. : HE6813 HI-SINCERITY Issued Date : 1997.08.11 Revised Date : 2004.08.17 MICROELECTRONICS CORP. Page No. : 1/4 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current: hFE=150-400 at IC=150mA • Complementary to HMBT8050 Absolute Maximum Ratings • Maximum Temperatures Storage

1.84. he8550s.pdf Size:55K _hsmc

Spec. No. : HE6129 HI-SINCERITY Issued Date : 1993.01.15 Revised Date : 2004.07.26 MICROELECTRONICS CORP. Page No. : 1/5 HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550S is designed for general purpose amplifier applications. Features TO-92 • High DC Current gain: 100-500 at IC=150mA • Complementary to HE8050S Absolute Maximum Ratings • Maximum Temperatures Sto

1.85. btp8550n3.pdf Size:259K _cystek

Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp. Revised Date :2009.02.02 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CESAT BTP8550N3 Features • Low VCE(SAT), -0.22V(typically) at IC=-500mA/IB=-50mA. • Complementary to BTN8050N3. • Pb-free package Symbol Outline BTP8550N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maxi

1.86. btp8550a3.pdf Size:163K _cystek

Spec. No. : C313A3 Issued Date : 2003.07.30 CYStech Electronics Corp. Revised Date : 2007.04.19 Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP8550A3 Description The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • Large collector current , IC= -1.5A • Low VCE(sat) • Complementary to BT

1.87. btp8550ba3.pdf Size:247K _cystek

Spec. No. : C313A3-B Issued Date : 2004.03.04 CYStech Electronics Corp. Revised Date : 2009.02.02 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTP8550BA3 Description The BTP8550BA3 is designed for use in 2W output amplifier of portable radios in class B push pull operation. Features • Large collector current , IC= -1.5A • Low VCE(sat) • Complemen

1.88. ss8550.pdf Size:284K _can-sheng

TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PC : 1 W (TA=25℃) 1.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2.BASE 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units 3.COLLECTOR VCBO -40 V VCBO VCBO Collector-Base Voltage VCBO ELECTRICAL ELECTRICAL ELECTRICAL EL

1.89. ss8550 y2 sot-23.pdf Size:508K _can-sheng

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units （符号）（参数名称）（额定值）（单位） VCBO Collector-Base

1.90. s8550 sot-23.pdf Size:274K _can-sheng

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURES Complimentary to S8050 Collector current:Ic=0.5A MARKING:2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units （符号）（参数名称）（额定值）（单�

1.91. s8550 to-92.pdf Size:266K _can-sheng

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURES Excellent Hfe linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units （符号）（参数名称）（额定值）（单位） VCBO Collector-Base Voltage （集�

1.92. s8550a.pdf Size:444K _blue-rocket-elect

S8550A(BR3CG8550AK) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. 特征 / Features PC, IC 大,与 S8050A(BR3DG8050AK)互补。 High PC and IC, complementary pair with S8050A(BR3DG8050AK). 用途 / Applications 用于乙类推挽功放。 Amplifier of portable radios in class B pu

1.93. 8550w.pdf Size:804K _blue-rocket-elect

8550W(BR3CA8550W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-323 Plastic Package. 特征 / Features 与 8050W(BR3DA8050W)互补。 Complementary pair with 8050W(BR3DA8050W). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circui

1.94. 8550t.pdf Size:305K _blue-rocket-elect

8550T(3CA8550T) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于功率放大电路。 Purpose: Power amplifier applications. 特点:与 8050T(3DA8050T)互补。/Features: Complementary pair with 8050T(3DA8050T). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数值单位 Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -1.5 A C

1.95. s8550w.pdf Size:904K _blue-rocket-elect

S8550W(BR3CG8550W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-323 Plastic Package. 特征 / Features 与 S8050W(BR3CG8050W)互补。 Complementary pair with S8050W(BR3CG8050W). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Cir

1.96. 8550m.pdf Size:485K _blue-rocket-elect

8550M(BR3CA8550M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 与 8050M(BR3DA8050M)互补。 Complementary pair with 8050M(BR3DA8050M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit

1.97. s8550m.pdf Size:660K _blue-rocket-elect

S8550M(BR3CG8550M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 与 S8050M(BR3DG8050M)互补。 Complementary pair with S8050M(BR3DG8050M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circu

1.98. l8550m.pdf Size:407K _blue-rocket-elect

L8550M Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 与 L8050M 互补。 Complementary pair with L8050M. 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2

1.99. l8550.pdf Size:603K _blue-rocket-elect

L8550(BR3CA8550K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. 特征 / Features PC, IC 大,与 L8050(BR3DA8050K)互补。 High PC and IC, complementary pair with L8050(BR3DA8050K). 用途 / Applications 用于 2W 乙类推挽功放。 2W output amplifier of portable radios in cl

1.100. l8550plt1g.pdf Size:234K _lrc

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550PLT1G Series PNP Silicon S-L8550PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION SOT–

1.101. l8550hplt1g.pdf Size:89K _lrc

LESHAN RADIO COMPANY, LTD. L8550HPLT1G General Purpose Transistors Series PNP Silicon S-L8550HPLT1G Series FEATURE High current capacity in compact package. Epitaxial planar type. 3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirem

1.102. l8550hqlt1g.pdf Size:85K _lrc

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

1.103. l8550qlt1g.pdf Size:202K _lrc

1.104. l8550hrlt1g.pdf Size:84K _lrc

1.105. lh8550qlt1g.pdf Size:138K _lrc

1.106. hc8550s.pdf Size:128K _shantou-huashan

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8550S █ APPLICATIONS Audio Frequency Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ TO-92 Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation……………………

1.107. h8550s.pdf Size:127K _shantou-huashan

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8550S █ APPLICATIONS Audio Frequency Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ TO-92 Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation……………………

1.108. h8550.pdf Size:138K _shantou-huashan

Shantou Huashan Electronic Devices Co.,Ltd. H8550 █ PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ TO-92 Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation

1.109. hc8550.pdf Size:142K _shantou-huashan

Shantou Huashan Electronic Devices Co.,Ltd. HC8550 █ PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ TO-92 Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation�

1.110. 3cg8550.pdf Size:221K _china

S8550(3CG8550) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于乙类推挽功放。 Purpose: Amplifier of portable radios in class B push-pull operation. 特点:P I 大,与 S8050(3DG8050)互补。 C、 C Features: High P and I , complementary pair with S8050(3DG8050). C C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数值单位 Symbol Rating Uni

1.111. 3cg8550a.pdf Size:184K _china

S8550A(3CG8550A) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于乙类推挽功放。 Purpose: Amplifier of portable radios in class B push-pull operation. 特点:P I 大,与 S8050A(3DG8050A)互补。 C、 C Features: High P and I , complementary pair with S8050A(3DG8050A). C C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数值单位 Symbol Rati

1.112. fta8550h.pdf Size:284K _first_silicon

SEMICONDUCTOR FTA8550H TECHNICAL DATA General Purpose Transistors PNP Silicon FEATURE 3 High current capacity in compact package. I C =-1.5A. 1 Epitaxial planar type. 2 PNP complement: FTC8050H Pb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION COLLECTOR 3 Shipping Device Marking 1 FTA8550H 1FD 3000/Tape&Reel BASE 2 EM

1.113. kst8550s.pdf Size:985K _kexin

SMD Type Transistors SMD Type PNP Transistors KST8550S SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector current: IC-=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VE

1.114. kst8550x.pdf Size:543K _kexin

SMD Type Transistors PNP Transistors KST8550X SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Power Dissipation: PC=0.3W ● Collector Current: IC=-1.5A 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emit

1.115. kst8550d-50.pdf Size:1283K _kexin

SMD Type Transistors SMD Type PNP Transistors KST8550D-50 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features ● Collector Current Capability IC=-1.2A ● Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V C

1.116. h8550.pdf Size:796K _kexin

SMD Type Transistors PNP Transistors H8550 ■ Features 1.70 0.1 ● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=-1.5A Comlementary to H8050 ● 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -

1.117. kst8550m.pdf Size:985K _kexin

SMD Type SMD Type Transistors PNP Transistors KST8550M SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current: IC=-0.8A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-

1.118. kst8550.pdf Size:1092K _kexin

SMD Type Transistors SMD Type PNP Transistors KST8550 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current: IC=-1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEB

1.119. s8550lt1.pdf Size:361K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Unit: mm Operating and storage junction temperature range TJ, Tst

1.120. ss8550.pdf Size:401K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) 3. COLLECTOR : 2 W (TC=25℃) 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltag

1.121. s8550.pdf Size:147K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current 3. COLLECTOR ICM: -0.5 A Collector-base voltage 1 2 3 V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

1.122. ss8550lt1.pdf Size:975K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM: 0.2 W (Tamb=25℃) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBO: -25 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃ ELE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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