February 1996 NDS9400ASingle P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V.transistors are produced using Fairchild's proprietary, high cellHigh density cell design for extremely low RDS(ON).density, DMOS technology. This very high density process ises

December 2001 FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.4 A, 30 V RDS(ON) = 130 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 200 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide r

DI9400SINGLE P-CHANNEL ENHANCEMENT MODEFIELD EFFECT TRANSISTORFeatures High Cell Density DMOS Technology Lower On-State Resistance High Power and Current CapabilitySO-8A Fast Switching SpeedDim Min Max High Transient Tolerance8 7 6 5A 3.94 4.19B 3.20 3.40TOPH BVIEWC 0.381 0.495D 2.67 3.051 2 3 4E 0.89 1.02GC G 0.527 0.679EJ 0.41 NominalJDK

FDS9400Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop