9400 Datasheet. Specs and Replacement
Type Designator: 9400 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
9400 Substitution
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9400 datasheet
February 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low RDS(ON). density, DMOS technology. This very high density process is es... See More ⇒
December 2001 FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.4 A, 30 V RDS(ON) = 130 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 200 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide r... See More ⇒
DI9400 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability SO-8 A Fast Switching Speed Dim Min Max High Transient Tolerance 8 7 6 5 A 3.94 4.19 B 3.20 3.40 TOP H B VIEW C 0.381 0.495 D 2.67 3.05 1 2 3 4 E 0.89 1.02 G C G 0.527 0.679 E J 0.41 Nominal J D K... See More ⇒
Detailed specifications: 92PU393, 92PU45, 92PU45A, 92PU51, 92PU51A, 92PU55, 92PU56, 92PU57, A1015, A157, A157A, A157B, A158, A158A, A158B, A158C, A159
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