BC237 - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC237/D Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 237 238 239 Rating Symbol Unit CASE 29 04, STYLE 17 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 25 25 Vdc Collector Emitter Voltage VCES 50 30 30 Vdc Emitter Ba

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC237; BC237B NPN general purpose transistors 1997 Sep 04 Product specification Supersedes data of 1997 Mar 06 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors BC237; BC237B FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (m

BC237/238/239 Switching and Amplifier Applications Low Noise BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage BC237 50 V BC238/239 30 V VCEO Collector-Emitter Voltage BC237 45 V BC238/239 25 V VEBO Emitter-Base Voltage B

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE BC239 TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Emitter Voltage VCES V BC237 50 V BC238/239 30 Collector-Emitter Voltage VCEO BC237 45 V BC238/239 25 V Emitter-Base Voltage VEBO BC237 6 V BC238/239 5 V Collector Current (DC) IC 100 mA

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC237,238, A,B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC239, B,C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL BC237 BC238 BC239 UNITS Collector Emitter Voltage VCE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237 / BC238 / BC239 TRANSISTOR (NPN) FEATURES TO-92 Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE BC237 BC238 BC239 3. EMITTER XXX XXX XXX 1 1 1 Equivalent Circuit BC237,BC238,BC239=Device code Solid dot=Green molding compound device, if none,the normal dev

SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES High Voltage BC237 VCEO=45V. Low Noise BC239 NF=0.2dB(Typ.), 3dB(Max.) N DIM MILLIMETERS (VCE=6V, IC=0.1mA, f=1kHz). A 4.70 MAX E K For Complementary With PNP type BC307/308/309. G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27

BC237/238/239(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) Collector-Emitter Voltage BC237 45 VCEO V BC238/239 25 Emitter-Base Voltage BC237 6 VEBO V BC238/239 5 IC Collector C

BC237B Amplifier Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector-Emitter Voltage VCEO 45 Vdc Collector-Emitter Voltage VCES 50 Vdc 3 Collector-Emitter Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc Total Power Dissipation @ TA = 25 C PD 350 mW