BC308CP - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC307/D Amplifier Transistors BC307,B,C PNP Silicon BC308C COLLECTOR BC309B 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 307 308C 309 Rating Symbol Unit CASE 29 04, STYLE 17 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 25 25 Vdc Collector Base Voltage VCBO 50 30 30 Vdc E

BC307/308/309 Switching and Amplifier Applications Low Noise BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage BC307 -50 V BC308/309 -30 V VCEO Collector-Emitter Voltage BC307 -45 V BC308/309 -25 V VEBO Emitter-Base Volta

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BC307

SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES High Voltage BC307 VCEO=-45V. Low Noise BC309 NF=0.2dB(Typ.), 3dB(Max.) N DIM MILLIMETERS (VCE=-6V, IC=-0.1mA, f=1kHz). A 4.70 MAX E K For Complementary With NPN type BC237/238/239. G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.2

BC307/308/309(PNP) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Emitter Voltage BC307 -45 VCEO V BC308/309 -25 Emitter-Base Voltage BC307 -6 VEBO V BC308/309 -5 Collector Current -Continuous -0.1 IC A Collec