Справочник транзисторов. BC548

 

Биполярный транзистор BC548 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC548

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 30 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 300 MHz

Ёмкость коллекторного перехода (Cc): 6 pf

Статический коэффициент передачи тока (hfe): 110

Корпус транзистора: TO92

Аналоги (замена) для BC548

 

 

BC548 Datasheet (PDF)

0.1. bc546 bc547 bc548.pdf Size:193K _motorola

BC548
BC548

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC546/DAmplifier TransistorsBC546, BNPN SiliconBC547, A, B, CBC548, A, B, CCOLLECTOR12BASE3EMITTER1MAXIMUM RA

0.2. bc548 bc548a bc548b bc548c.pdf Size:21K _fairchild_semi

BC548
BC548

Discrete POWER & SignalTechnologiesBC548BC548ABC548BBC548CE TO-92BCNPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourced fromProcess 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-

 0.3. bc546 bc547 bc548 bc549 bc550.pdf Size:44K _fairchild_semi

BC548
BC548

BC546/547/548/549/550Switching and Applications High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560TO-9211. Collector 2. Base 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC546 80 V: BC547/550 50 V: BC548/549 30 VVCE

0.4. bc546 bc547 bc548 to-92.pdf Size:295K _mcc

BC548
BC548

BC546A/B/CMCCMicro Commercial C omponentsTMBC547A/B/C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC548A/B/CFax: (818) 701-4939FeaturesNPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Amplifier Transistor Through Hole Package 150 C Junction Tempe

 0.5. bc546b bc547a-b-c bc548b-c.pdf Size:72K _onsemi

BC548
BC548

BC546B, BC547A, B, C,BC548B, CAmplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGS2BASERating Symbol Value UnitCollector - Emitter Voltage VCEO VdcBC546 653BC547 45EMITTERBC548 30Collector - Base Voltage VCBO VdcBC546 80BC547 50BC548 30TO-92Emitter - Base Voltage VEBO 6.0 VdcCASE 2

0.6. sbc548.pdf Size:199K _auk

BC548
BC548

SBC548NPN Silicon TransistorDescriptions PIN Connection General purpose application C Switching application BFeatures High voltage : VCEO=30V E Complementary pair with SBC558 TO-92 Ordering Information Type NO. Marking Package Code SBC548 SBC548 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base volt

0.7. bc546 bc547 bc548.pdf Size:119K _cdil

BC548
BC548

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC546, A, B, CNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC547, A. B, CBC548, A. B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC546 BC547 BC548 UNITSCollector Em

0.8. bc546 bc547 bc548.pdf Size:277K _kec

BC548
BC548

SEMICONDUCTOR BC546/7/8TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .B CFEATURESHigh Voltage : BC546 VCEO=65V.N DIM MILLIMETERSFor Complementary With PNP Type BC556/557/558.A 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25)H 0.45_H J 14.00 + 0.50CHARACTERISTIC S

0.9. bc548 bc547 bc546.pdf Size:548K _lge

BC548
BC548

BC546/BC547/BC548(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER FeaturesHigh Voltage Complement to BC556,BC557,BC558 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage BC546 80 BC547 50 VCBO V BC548 30 Collector-Emitter Voltage BC546 65 VCEO BC547 45 V BC548 30 Dimensions in i

0.10. bc546 bc547 bc548.pdf Size:1074K _wietron

BC548
BC548

BC546, A/BBC547, A/B/CBC548, A/B/CNPN General Purpose Transistor COLLECTOR1TO-922BASE1233EMITTERMaximum Ratings( T =25C unless otherwise noted)ARating Symbol BC546 BC547 BC548 UnitCollector-Emitter Voltage VECO 65 45 30VdcCollector-Base Voltage V 80 50 30 VdcCBOEmitter-Base Voltage VEBO 6 6 6 VdcCollector Current Continuous lC 100mAdcTHERMAL CHA

0.11. bc546abk bc547abk bc548abk bc549abk bc546bbk bc547bbk bc548bbk bc549bbk bc546cbk bc547cbk bc548cbk bc549cbk.pdf Size:81K _diotec

BC548
BC548

BC546xBK ... BC549xBKBC546xBK ... BC549xBKGeneral Purpose Si-Epitaxial Planar TransistorsNPN NPNSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2009-12-030.1Power dissipation Verlustleistung 500 mW4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gC B EPlastic material has UL classification 94V-0Gehusematerial

0.12. bc548.pdf Size:189K _inchange_semiconductor

BC548
BC548

isc Silicon NPN Transistor BC548DESCRIPTIONHigh VoltageComplement to Type BC558Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor TV and home appliance equipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBOV Collector-Emitter Voltage 30 VCEOV Emitter-Base Voltage

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