BC549 - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC549B/D Low Noise Transistors NPN Silicon BC549B,C BC550B,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC549 BC550 Unit CASE 29 04, STYLE 17 Collector Emitter Voltage VCEO 30 45 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 50 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collec

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS

BC546/547/548/549/550 Switching and Applications High Voltage BC546, VCEO=65V Low Noise BC549, BC550 Complement to BC556 ... BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BC546 80 V BC547/550 50 V BC548/549 30 V VCE

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC549,A.B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC550,A,B,C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C Low Noise Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL BC549 BC550 UNITS Collector Emitter Voltage VCEO 30 45 V

Low Noise Transistors BC549B,C NPN Silicon BC550B,C MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector Emitter Voltage VCEO 30 45 Vdc Collector Base Voltage VCBO 30 50 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc 1 Total Device Dissipation @ TA = 25 C PD 625 mW 2 Derate above 25 C 5.0 mW/ C 3 Total Device Dissipation @ TC = 25

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 30-80 V High surge current capability VCEO 30-65 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free accordi

BC546xBK ... BC549xBK BC546xBK ... BC549xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2009-12-03 0.1 Power dissipation Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Geh usematerial