BC807-25LT1. Аналоги и основные параметры
Наименование производителя: BC807-25LT1
Маркировка: 5B
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hFE): 160
Корпус транзистора: SOT23
Аналоги (замена) для BC807-25LT1
- подборⓘ биполярного транзистора по параметрам
BC807-25LT1 даташит
bc807-40lt3g bc807-25lt1g.pdf
BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value
sbc807-25lt1g.pdf
BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value
bc807-16lt1g bc807-25lt1g bc807-40lt1g.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
lbc807-25lt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G PNP Silicon LBC807-40LT1G FEATURE S-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-25LT1G General purpose switching and amplification. S-LBC807-40LT1G PNP complement LBC807 Series. We declare that the material of product complia
Другие транзисторы: BC738-25, BC738-40, BC738-8, BC807, BC807-16, BC807-16LT1, BC807-16W, BC807-25, TIP31, BC807-25W, BC807-40, BC807-40LT1, BC807-40W, BC808, BC808-16, BC808-16W, BC808-25
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