BC807-25LT1 Specs and Replacement
Type Designator: BC807-25LT1
SMD Transistor Code: 5B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Package: SOT23
BC807-25LT1 Substitution
- BJT ⓘ Cross-Reference Search
BC807-25LT1 datasheet
BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value ... See More ⇒
BC807-16L, BC807-25L, BC807-40L General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value ... See More ⇒
bc807-16lt1g bc807-25lt1g bc807-40lt1g.pdf ![]()
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G PNP Silicon LBC807-40LT1G FEATURE S-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-25LT1G General purpose switching and amplification. S-LBC807-40LT1G PNP complement LBC807 Series. We declare that the material of product complia... See More ⇒
Detailed specifications: BC738-25, BC738-40, BC738-8, BC807, BC807-16, BC807-16LT1, BC807-16W, BC807-25, TIP31, BC807-25W, BC807-40, BC807-40LT1, BC807-40W, BC808, BC808-16, BC808-16W, BC808-25
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