Биполярный транзистор BC808-25W - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC808-25W
Маркировка: 5Fs_5Ft
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SOT323
Аналоги (замена) для BC808-25W
BC808-25W Datasheet (PDF)
sbc808-25lt1g.pdf
BC808-25LT1G,SBC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3Features AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2CompliantEMITTER3MAXIMUM RATINGS
bc808-25lt1-40lt1.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -
bc808-25lt1g sbc808-25lt1g bc808-40lt1g.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeaturesCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGSRating Symbol Value U
bc808-40lt1g bc808-25lt1g bc808-40lt1g bc808-25lt1g.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -
bc808-25lt1g bc808-40lt1g.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeaturesCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGSRating Symbol Value U
bc807-16 bc807-25 bc807-40 bc808-16 bc808-25 bc808-40.pdf
BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features AEC-Q101 Qualified and PPAP Capable Halogen and A
bc807-16 bc807-25 bc807-40 bc808-16 bc808-25 bc808-40.pdf
BC807/BC808-16/-25/-40PNP TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the NPN transistors BC817 andBC818 are recommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (T =25, unless otherwisenoted)APa
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050