BC808-25W Datasheet, Equivalent, Cross Reference Search
Type Designator: BC808-25W
SMD Transistor Code: 5Fs_5Ft
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT323
BC808-25W Transistor Equivalent Substitute - Cross-Reference Search
BC808-25W Datasheet (PDF)
sbc808-25lt1g.pdf
BC808-25LT1G,SBC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3Features AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2CompliantEMITTER3MAXIMUM RATINGS
bc808-25lt1-40lt1.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -
bc808-25lt1g sbc808-25lt1g bc808-40lt1g.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeaturesCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGSRating Symbol Value U
bc808-40lt1g bc808-25lt1g bc808-40lt1g bc808-25lt1g.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -
bc808-25lt1g bc808-40lt1g.pdf
BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeaturesCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGSRating Symbol Value U
bc807-16 bc807-25 bc807-40 bc808-16 bc808-25 bc808-40.pdf
BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features AEC-Q101 Qualified and PPAP Capable Halogen and A
bc807-16 bc807-25 bc807-40 bc808-16 bc808-25 bc808-40.pdf
BC807/BC808-16/-25/-40PNP TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the NPN transistors BC817 andBC818 are recommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (T =25, unless otherwisenoted)APa
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
