BC857CWT1. Аналоги и основные параметры
Наименование производителя: BC857CWT1
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hFE): 520
Корпус транзистора: SOT323
Аналоги (замена) для BC857CWT1
- подборⓘ биполярного транзистора по параметрам
BC857CWT1 даташит
nsvbc857cwt1g.pdf
BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement
bc857cwt1g bc857bwt1g.pdf
BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement
bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf
BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement
lbc857cwt1g.pdf
LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G General Purpose Transistors LBC857AWT1G, BWT1G CWT1G PNP Silicon LBC858AWT1G, BWT1G These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ S-LBC856AWT1G, BWT1G SC 70 which is designed for low power surface mount applications. S-LBC857AWT1G, BWT1G Features CWT1G We declare t
Другие транзисторы: BC857BLT1, BC857BR, BC857BW, BC857BWT1, BC857C, BC857CLT1, BC857CR, BC857CW, A1015, BC857S, BC858, BC858A, BC858ALT1, BC858AR, BC858AW, BC858AWT1, BC858B
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