All Transistors. BC857CWT1 Datasheet

 

BC857CWT1 Datasheet and Replacement


   Type Designator: BC857CWT1
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 520
   Noise Figure, dB: -
   Package: SOT323
 

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BC857CWT1 Datasheet (PDF)

 0.1. Size:81K  onsemi
 nsvbc857cwt1g.pdf pdf_icon

BC857CWT1

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 0.2. Size:81K  onsemi
 bc857cwt1g bc857bwt1g.pdf pdf_icon

BC857CWT1

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 0.3. Size:78K  onsemi
 bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf pdf_icon

BC857CWT1

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 0.4. Size:275K  lrc
 lbc857cwt1g.pdf pdf_icon

BC857CWT1

LESHAN RADIO COMPANY, LTD.LBC856AWT1G, BWT1GGeneral Purpose TransistorsLBC857AWT1G, BWT1GCWT1GPNP SiliconLBC858AWT1G, BWT1GThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/S-LBC856AWT1G, BWT1GSC70 which is designed for low power surface mountapplications. S-LBC857AWT1G, BWT1GFeaturesCWT1GWe declare t

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Datasheet: BC857BLT1 , BC857BR , BC857BW , BC857BWT1 , BC857C , BC857CLT1 , BC857CR , BC857CW , TIP3055 , BC857S , BC858 , BC858A , BC858ALT1 , BC858AR , BC858AW , BC858AWT1 , BC858B .

History: 2SD1609 | 2SC3944A | 2SC1740 | CSD1506P | MMBT404 | 40306 | MMBT4354

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