BC859 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC859; BC860 PNP general purpose transistors 1999 May 28 Product specification Supersedes data of 1998 Jul 16 Philips Semiconductors Product specification PNP general purpose transistors BC859; BC860 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEET BC859; BC860 PNP general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 May 28 NXP Semiconductors Product data sheet PNP general purpose transistors BC859; BC860 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise inpu

August 2006 BC856- BC860 tm PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits 3 Low Noise BC859, BC860 Complement to BC846 ... BC850 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO

PNP EPITAXIAL BC856/857/858/859/860 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE BC859, BC860 Complement to BC846 ... BC850 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO BC856 -80 V BC857/860 -50 V BC858/859 -30 V Collecto

PNP Silicon AF Transistors BC 856 ... BC 860 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 846, BC 847, BC 849, BC 850 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 856 A 3As Q62702-C1773 B E C SOT-23 BC 856 B 3Bs Q6

SOT23 PNP SILICON PLANAR BC856 BC857 BC858 BC859 GENERAL PURPOSE TRANSISTORS BC860 ISSUE 6 - APRIL 1997 T I D T I T T E 8 8 8 8 8 C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 8 SOT23 8 8 8 8 8 8 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I I I I I Di i i T i T T T ELECTRICAL CH

SEMICONDUCTOR BC859/860 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L For Complementary with NPN Type BC849/850 DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 MAXIMUM RATING (Ta=25 ) 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 CHARACTERISTIC SYMBOL RATING UNIT G 1.90 H 0.95 BC859 -30 J 0.13+0.10/-0.05

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C COLLECTOR 3 General Purpose Transistor MARKING DIAGRAM 3 3 PNP Silicon 1 1 2 BASE XX = Device SOT-23 Code (See 1 2 Table Below) 2 EMITTER ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit Collector-Emitter Voltage V -65 BC856 CEO V BC857 -45 BC858,BC859 -30 Collector-Base Voltage BC856 -80 V BC857

BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -VCEO 30 V Emitter Base Volt

SMD Type Transistors PNP Transistors BC859 BC860 (KC859 KC860) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 45 V). NPN complements BC849 and BC850. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec

BC856-BC860 BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V B

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC859W; BC860W PNP general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Sep 03 Philips Semiconductors Product specification PNP general purpose transistors BC859W; BC860W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATI

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 Sep 03 NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PNP Silicon AF Transistors BC 856W ... BC 860W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 856 AW 3As Q62702-C2335 B E C SOT-323 BC 856

BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

BC857...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) 1 BC857BL3 is not qualified according AEC Q101 Type Marking Pin

BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2

BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1 Unique Sit

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

SMD Type Transistors PNP Transistors BC859W,BC860W (KC859W,KC860W) Features Low current (max. 100 mA) Low voltage (max. 45 V). Complements to BC849W and BC850W. C B 1.Base 2.Emitter E 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC859W -30 Collector - Base Voltage VCBO BC860W -50 BC859W -30 V Collector - Emitter Voltag

BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 330 mWatt VOLTAGE 30/45/65 Volt FEATURES 0.120(3.04) General Purpose Amplifier Applications 0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices BC846/BC847/BC848/BC849 Series Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) 0.047(1.20) Green molding compound as per IEC61

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon Package outline Features Moisture sensitivity level 1 SOT-23 ESD rating human body model >4000 V,machine model >400 V Epitaxial plana chip construction Ideal for medium power application and switching Capable of 225mW power dissipation. Lead-free parts for green partner, ex

BC856 THRU BC860 BC856 THRU BC860 BC856 THRU BC860 BC8 56 THRU BC8 60 TRANSISTOR(PNP) FEATURES Switching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits 1 BASE Low Noise BC859, BC860 2 EMITTER 3 COLLECTOR Complement to BC846 ... BC850 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec

BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -