BC859 Datasheet and Replacement

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC859; BC860PNP general purpose transistors1999 May 28Product specificationSupersedes data of 1998 Jul 16Philips Semiconductors Product specificationPNP general purpose transistors BC859; BC860FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETBC859; BC860PNP general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 May 28 NXP Semiconductors Product data sheetPNP general purpose transistors BC859; BC860FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector Low noise inpu

August 2006BC856- BC860tmPNP Epitaxial Silicon TransistorFeatures Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits3 Low Noise: BC859, BC860 Complement to BC846 ... BC850 2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO

PNP EPITAXIALBC856/857/858/859/860 SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC859, BC860 Complement to BC846 ... BC850ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO:BC856 -80 V:BC857/860 -50 V:BC858/859 -30 VCollecto

PNP Silicon AF Transistors BC 856 ... BC 860Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,BC 849, BC 850 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 856 A 3As Q62702-C1773 B E C SOT-23BC 856 B 3Bs Q6

SOT23 PNP SILICON PLANAR BC856 BC857BC858 BC859GENERAL PURPOSE TRANSISTORSBC860 ISSUE 6 - APRIL 1997 T I D T I T T E 8 8 8 8 8 C 8 8 8 8 8 8 8 8 8 8B 8 8 8 8 8 8 8 8 SOT23 8 8 8 8 8 8 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I I I I I Di i i T i T T T ELECTRICAL CH

SEMICONDUCTOR BC859/860TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LFor Complementary with NPN Type BC849/850DIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX2MAXIMUM RATING (Ta=25 ) 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201CHARACTERISTIC SYMBOL RATING UNITG 1.90H 0.95BC859 -30 J 0.13+0.10/-0.05

BC856A/B-BC857A/B/CBC858A/B/C-BC859B/CCOLLECTOR3General Purpose Transistor MARKING DIAGRAM33PNP Silicon 112BASEXX = DeviceSOT-23 Code (See1 2 Table Below)2EMITTER( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V -65BC856 CEOVBC857 -45BC858,BC859 -30Collector-Base VoltageBC856 -80VBC857

BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -VCEO 30 V Emitter Base Volt

SMD Type TransistorsPNP TransistorsBC859~BC860 (KC859~KC860)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 45 V). NPN complements: BC849 and BC850.1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

BC856-BC860BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V B

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187BC859W; BC860WPNP general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Sep 03Philips Semiconductors Product specificationPNP general purpose transistors BC859W; BC860WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATI

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D187BC859W; BC860WPNP general purpose transistorsProduct data sheet 1999 Apr 12Supersedes data of 1997 Sep 03 NXP Semiconductors Product data sheetPNP general purpose transistors BC859W; BC860WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PNP Silicon AF Transistors BC 856W ... BC 860WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,BC 849W, BC 850W (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 856 AW 3As Q62702-C2335 B E C SOT-323BC 856

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

SMD Type TransistorsPNP TransistorsBC859W,BC860W(KC859W,KC860W) Features Low current (max. 100 mA) Low voltage (max. 45 V). Complements to BC849W and BC850W.CB1.Base2.EmitterE3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC859W -30 Collector - Base Voltage VCBOBC860W -50BC859W -30 V Collector - Emitter Voltag

BC856 SERIESPNP GENERAL PURPOSE TRANSISTORSPOWER 330 mWattVOLTAGE 30/45/65 VoltFEATURES0.120(3.04) General Purpose Amplifier Applications0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849Series Lead free in compliance with EU RoHS 2011/65/EU directive0.056(1.40)0.047(1.20) Green molding compound as per IEC61

BC856A/B-BC857A/B/CBC858A/B/C-BC859B/CGeneral Purpose TransistorPNP Silicon Package outlineFeatures Moisture sensitivity level: 1SOT-23 ESD rating human body model: >4000 V,machine model: >400 V Epitaxial plana chip construction Ideal for medium power application and switching Capable of 225mW power dissipation. Lead-free parts for green partner, ex

BC856 THRU BC860BC856 THRU BC860BC856 THRU BC860BC8 56 THRU BC8 60 TRANSISTOR(PNP)FEATURESSwitching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits1BASE Low Noise: BC859, BC8602EMITTER 3COLLECTOR Complement to BC846 ... BC850MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec

BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -