2N28. Аналоги и основные параметры
Наименование производителя: 2N28
Тип материала: Ge
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.12 W
Макcимально допустимое напряжение коллектор-база (Ucb): 35 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 85 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.5 MHz
Ёмкость коллекторного перехода (Cc): 16 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: OV17
Аналоги (замена) для 2N28
- подборⓘ биполярного транзистора по параметрам
2N28 даташит
fdaf62n28.pdf
October 2006 TM UniFET FDAF62N28 280V N-Channel MOSFET Features Description 36A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 77 nC) DMOS technology. Low Crss ( typical 83 pF) This advanced technology has been especially tailored
fda62n28.pdf
TM UniFET FDA62N28 280V N-Channel MOSFET Features Description 62A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 77 nC) DMOS technology. Low Crss ( typical 83 pF) This advanced technology has been especially tailored to mini-
2n2857 2n3839.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n2857c1b.pdf
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt
2n2894a.pdf
2N2894A Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA
2n2894ac1a.pdf
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto
2n2857c1.pdf
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt
2n2894.pdf
2N2894 PNP SILICON MECHANICAL DATA Dimensions in mm (inches) TRANSISTOR 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) SILICON PNP TRANSISTOR HIGH SPEED, LOW SATURATION SWITCH APPLICATIONS 0.48 (0.019) GENERAL PURPOSE SWITCHING 0.41 (0.016) dia. APPLICATIONS 2.54 (0.100) Nom. 3 1 2 TO18 Underside View PIN1 EMITER PIN 2 BASE PIN 3 COLLE
2n2896x.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X High Voltage Hermetic TO-18 Metal package. Ideally suited for General Purpose Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 140V VCEO Collector Emitter Voltage 90V VCER Collector Emitter Voltage 140
2n2891smd05.pdf
SILICON NPN TRANSISTOR 2N2891SMD05 V(BR)CEO = 80V (Min). Hermetic Ceramic Surface Mount Package Ideally Suited For Low Frequency Large Signal Applications (High Voltage). Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 80V VEBO Emitter
2n2857c1a.pdf
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt
2n2895.pdf
2N2895 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 65V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX
2n2894ac1b.pdf
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto
2n2845.pdf
2N2845 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN
2n2848.pdf
2N2848 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 20V dia. IC = 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can
2n2896csm4.pdf
2N2896CSM4 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTOR 1.40 0.15 5.59 0.13 (0.055 0.006) (0.22 0.005) 0.25 0.03 (0.01 0.001) FEATURES 0.23 rad. (0.009) 3 2 0.23 NPN High Voltage Planar Transistor 4 1 min. (0.009) Hermetic Ceramic Surface Mount 1.02 0.20 2.03 0.20 Package (0.04 0.008) (0.08 0.008) Full Screenin
2n2857.pdf
2N2857 MECHANICAL DATA Dimensions in mm (inches) NPN TRANSISTOR 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) FEATURES SILICON NPN TRANSISTOR 0.48 (0.019) APPLICATIONS 0.41 (0.016) dia. AMPLIFIER, OSCILLATOR AND CONVERTER APPLICATIONS UP TO 500MHz 2.54 (0.100) Nom. 4 3 1 2 TO-72 METAL PACKAGE ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VC
2n2894adcsm.pdf
2N2894ADCSM DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FEATURES SILICON PLANAR EPITAXIAL DUAL PNP 2.29 0.20 1.65 0.13 1.40 0.15 (0.09 0.008) (0.065 0.005) (0.055 0.006) TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT 2 3 PACKAGE 1 4 CECC SCR
2n2891.pdf
2N2891 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
2n2857dcsm.pdf
2N2857DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 30V CEO 6.22 0.13 A = 1.27 0.13 I = 0.04A C (0.
rt2n28m.pdf
RT2N28M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N28M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=47k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui
2n3749 2n2880.pdf
TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level JAN 2N2880 2N3749 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 110 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Base Current I 0.5 Adc B Collector Current 5.0 Adc IC Total Power Dissipation
2n2880.pdf
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N2880 APPLICATIONS Fast Switching High Frequency Switching and Amplifying 5 Amp, 80V, Planar, NPN FEATURES Power Transistors High Reliability Greater Gain Stability JAN,JTX,JANTXV,JANS DESCRIPTION DESCRIPTION These power transistors are produced by PPC's DO
wm02n28m.pdf
Document W0803348, Rev B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS D R
Другие транзисторы: 2N2791, 2N2792, 2N2793, 2N2795, 2N2796, 2N2797, 2N2798, 2N2799, 2N5401, 2N280, 2N2800, 2N2800-46, 2N2800S, 2N2801, 2N2801-46, 2N2801S, 2N2802
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