2N28 Datasheet and Replacement

October 2006TMUniFETFDAF62N28280V N-Channel MOSFETFeatures Description 36A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 77 nC)DMOS technology. Low Crss ( typical 83 pF)This advanced technology has been especially tailored

TMUniFETFDA62N28280V N-Channel MOSFETFeatures Description 62A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 77 nC)DMOS technology. Low Crss ( typical 83 pF)This advanced technology has been especially tailored to mini-

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

2N2894ADimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 12V 0.48 (0.019)0.41 (0.016)dia.IC = 0.2A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA

HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

2N2894PNP SILICON MECHANICAL DATADimensions in mm (inches) TRANSISTOR 5.84 (0.230)5.31 (0.209)FEATURES4.95 (0.195)4.52 (0.178) SILICON PNP TRANSISTOR HIGH SPEED, LOW SATURATION SWITCHAPPLICATIONS:0.48 (0.019)GENERAL PURPOSE SWITCHING0.41 (0.016)dia.APPLICATIONS2.54 (0.100)Nom.3 12TO18Underside ViewPIN1 EMITER PIN 2 BASE PIN 3 COLLE

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X High Voltage Hermetic TO-18 Metal package. Ideally suited for General Purpose Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 140V VCEO Collector Emitter Voltage 90V VCER Collector Emitter Voltage 140

SILICON NPN TRANSISTOR 2N2891SMD05 V(BR)CEO = 80V (Min). Hermetic Ceramic Surface Mount Package Ideally Suited For Low Frequency Large Signal Applications (High Voltage). Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 80V VEBO Emitter

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

2N2895Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 65V 0.48 (0.019)0.41 (0.016)dia.IC = 1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX

HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto

2N2845Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019)0.41 (0.016)dia.IC = 0.5A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN

2N2848Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 20V dia.IC = 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3 can

2N2896CSM4MECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)FEATURES0.23rad.(0.009)3 20.23 NPN High Voltage Planar Transistor4 1min.(0.009) Hermetic Ceramic Surface Mount1.02 0.20 2.03 0.20Package(0.04 0.008) (0.08 0.008) Full Screenin

2N2857MECHANICAL DATADimensions in mm (inches)NPN TRANSISTOR4.95 (0.195)4.52 (0.178)4.95 (0.195)4.52 (0.178)FEATURES SILICON NPN TRANSISTOR0.48 (0.019)APPLICATIONS:0.41 (0.016)dia. AMPLIFIER, OSCILLATOR ANDCONVERTER APPLICATIONS UP TO500MHz2.54 (0.100)Nom.43 12TO-72 METAL PACKAGEABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)VC

2N2894ADCSMDUAL HIGH SPEED, MEDIUM POWERPNP GENERAL PURPOSE TRANSISTORIN A HERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FEATURES SILICON PLANAR EPITAXIAL DUAL PNP2.29 0.20 1.65 0.13 1.40 0.15(0.09 0.008) (0.065 0.005) (0.055 0.006)TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT2 3PACKAGE 1 4 CECC SCR

2N2891Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

2N2857DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 30V CEO6.22 0.13 A = 1.27 0.13I = 0.04A C(0.

RT2N28M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N28M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level JAN 2N2880 2N3749 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 110 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Base Current I 0.5 Adc B Collector Current 5.0 Adc IC Total Power Dissipation

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N2880APPLICATIONS: Fast Switching High Frequency Switching and Amplifying5 Amp, 80V,Planar, NPNFEATURES:Power Transistors High Reliability Greater Gain StabilityJAN,JTX,JANTXV,JANSDESCRIPTION:DESCRIPTION:These power transistors are produced by PPC's DO

Document: W0803348, Rev: B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS DR