Order this documentMOTOROLAby BD136/DSEMICONDUCTOR TECHNICAL DATABD136BD138Plastic Medium Power SiliconBD140PNP TransistorBD140-10. . . designed for use as audio amplifiers and drivers utilizing complementary or quasicomplementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139POW

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D100BD136; BD138; BD140PNP power transistors1999 Apr 12Product specificationSupersedes data of 1997 Mar 26Philips Semiconductors Product specificationPNP power transistors BD136; BD138; BD140FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to met

BD136BD138/BD140PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTORDESCRIPTIONThe BD136, BD138 and BD140 are siliconepitaxial planar PNP transistors in Jedec SOT-32plastic package, designed for audio amplifiersand drivers utilizing complementary or quasicompementary circuits.12The complementary NPN types are the BD1353BD137 and BD139.SOT-32I

BD136BD138/BD140PNP SILICON TRANSISTORSType MarkingBD136 BD136BD136-10 BD136-10BD136-16 BD136-16BD138 BD138BD140 BD140BD140-10 BD140-101BD140-16 BD140-1623 STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTOR SOT-32DESCRIPTION The BD136, BD138 and BD140 are siliconEpitaxial Planar PNP transistors mounted inJedec SOT-32 plastic package, designed for

BD136/138/140Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage :

BD136/138/140Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage :

BD136 / BD138 / BD140 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-126 High Current 1Emitter 1112Collector 2223Base 333CLASSIFICATION OF hFE Product-Rank BD136-6 BD136-10 BD136-16 AProduct-Rank BD138-6 BD138-10 BD138-16 BEFProduct-Rank BD140-

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138BD140TO126 Plastic PackageECBDesigned for use as Audio Amplifier and Drivers UtilizingComplementary BD135, BD137, BD139ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD136 BD138 BD140 UNITCollector -Emitter Voltage VCEO 45 60 80 VCol

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD136 / BD138 / BD140 TRANSISTOR (PNP)TO 126 FEATURES 1. EMITTER High Current Complement To BD135, BD137 And BD139 2. COLLECTOR3. BASE Equivalent Circuit Equivalent Circuit BD136 BD138 BD140 XX XX XXBD136,BD138,BD140=Device code Solid dot = Green molding compo

BD136/BD138/BD140(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters)2.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 7.4002.9001.1007.8001.500Units Value 3.9003.000Symbol Parameter 4.1003.200BD135 BD137 BD13910.6000.00011.000

3CA138(BD138) PNP PCM TC70 8 W ICM 2 A Tjm 150 Tstg -55~150 VCE=10V Rth 10 /W IC=0.7A V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=5V 0.1 A IC=0.5A VCEsat 0.5 V

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD136 BD138 BD140 DESCRIPTION With TO-126 package High current Complement to type BD135/137/139APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta

isc Silicon PNP Power Transistor BD138DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -60V(Min)CEO(SUS)Complement to type BD137Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi compleme

BD136G, BD138G, BD140GPlastic Medium-PowerSilicon PNP TransistorsThis series of plastic, medium-power silicon PNP transistors aredesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits.www.onsemi.comFeatures High DC Current Gain1.5 A POWER TRANSISTORS BD 136, 138, 140 are complementary with BD 135, 137, 139PNP SILICON

PNP Epitaxial SiliconTransistorBD136 SeriesBD136 / BD138 / BD140Applicationswww.onsemi.com Complement to BD135, BD137 and BD139 Respectively These are Pb-Free DevicesABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol Max UnitCollector-Base Voltage VCBO VBD136 -45BD138 -60TO-126BD140 -80CASE 340AS1 2 3Collector-Emitter Voltage VCEO V

BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications ECB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T-VCBO Collector Base Voltage 45 60 100 V-VCEO Collector Emitter Voltage 45 60 80 V-VEBO Emitter Base Voltage 5 VCollector Current -IC 1.5 ABase Cur

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD138 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25