Биполярный транзистор BD159 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD159
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 375 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 350 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO126
BD159 Datasheet (PDF)
bd157 bd158 bd159.pdf
Order this documentMOTOROLAby BD157/DSEMICONDUCTOR TECHNICAL DATABD157BD158Plastic Medium Power NPNBD159Silicon Transistor. . . designed for power output stages for television, radio, phonograph and otherconsumer product applications. 0.5 AMPEREPOWER TRANSISTORS Suitable for Transformerless, LineOperated EquipmentNPN SILICON Thermopad{ Construction Provides
bd157 bd158 bd159.pdf
BD157/158/159Low Power Fast Switching Output Stages For T.V Radio Audio Output AmplifiersTO-12611. Emitter 2.Collector 3.BaseNPN Epitxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD157 275 V : BD158 325 V : BD159 375 V VCEO Collector-Emitter Voltage : BD157 250 V : BD158 300
bd159.pdf
isc Silicon NPN Power Transistor BD159DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)DC Current Gain-: h = 30~240(Min) @ I = 50mAFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power output stages for television, radio,phonograph and other consumer product applications.ABSOL
bd159-d.pdf
BD159Plastic Medium PowerNPN Silicon TransistorThis device is designed for power output stages for television, radio,phonograph and other consumer product applications.http://onsemi.comFeatures Suitable for Transformerless, Line-Operated Equipment0.5 AMPERE Thermopadt Construction Provides High Power Dissipation RatingPOWER TRANSISTORfor High ReliabilityNPN SILICON
bd159g.pdf
BD159Plastic Medium PowerNPN Silicon TransistorThis device is designed for power output stages for television, radio,phonograph and other consumer product applications.http://onsemi.comFeatures Suitable for Transformerless, Line-Operated Equipment0.5 AMPERE Thermopadt Construction Provides High Power Dissipation RatingPOWER TRANSISTORfor High ReliabilityNPN SILICON
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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