BD159 - описание и поиск аналогов

Order this document MOTOROLA by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 Plastic Medium Power NPN BD159 Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS Suitable for Transformerless, Line Operated Equipment NPN SILICON Thermopad Construction Provides

BD157/158/159 Low Power Fast Switching Output Stages For T.V Radio Audio Output Amplifiers TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD157 275 V BD158 325 V BD159 375 V VCEO Collector-Emitter Voltage BD157 250 V BD158 300

isc Silicon NPN Power Transistor BD159 DESCRIPTION Collector Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) DC Current Gain- h = 30 240(Min) @ I = 50mA FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power output stages for television, radio, phonograph and other consumer product applications. ABSOL

BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http //onsemi.com Features Suitable for Transformerless, Line-Operated Equipment 0.5 AMPERE Thermopadt Construction Provides High Power Dissipation Rating POWER TRANSISTOR for High Reliability NPN SILICON

BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http //onsemi.com Features Suitable for Transformerless, Line-Operated Equipment 0.5 AMPERE Thermopadt Construction Provides High Power Dissipation Rating POWER TRANSISTOR for High Reliability NPN SILICON