BD159 Datasheet and Replacement

Order this documentMOTOROLAby BD157/DSEMICONDUCTOR TECHNICAL DATABD157BD158Plastic Medium Power NPNBD159Silicon Transistor. . . designed for power output stages for television, radio, phonograph and otherconsumer product applications. 0.5 AMPEREPOWER TRANSISTORS Suitable for Transformerless, LineOperated EquipmentNPN SILICON Thermopad{ Construction Provides

BD157/158/159Low Power Fast Switching Output Stages For T.V Radio Audio Output AmplifiersTO-12611. Emitter 2.Collector 3.BaseNPN Epitxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD157 275 V : BD158 325 V : BD159 375 V VCEO Collector-Emitter Voltage : BD157 250 V : BD158 300

isc Silicon NPN Power Transistor BD159DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)DC Current Gain-: h = 30~240(Min) @ I = 50mAFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power output stages for television, radio,phonograph and other consumer product applications.ABSOL

BD159Plastic Medium PowerNPN Silicon TransistorThis device is designed for power output stages for television, radio,phonograph and other consumer product applications.http://onsemi.comFeatures Suitable for Transformerless, Line-Operated Equipment0.5 AMPERE Thermopadt Construction Provides High Power Dissipation RatingPOWER TRANSISTORfor High ReliabilityNPN SILICON

BD159Plastic Medium PowerNPN Silicon TransistorThis device is designed for power output stages for television, radio,phonograph and other consumer product applications.http://onsemi.comFeatures Suitable for Transformerless, Line-Operated Equipment0.5 AMPERE Thermopadt Construction Provides High Power Dissipation RatingPOWER TRANSISTORfor High ReliabilityNPN SILICON