Биполярный транзистор BD204F - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD204F
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 7 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO220F
BD204F Datasheet (PDF)
bd202f bd204f.pdf
isc Silicon PNP Power Transistor BD202F/204FDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD202F(BR)CEO-60V(Min)- BD204FComplement to Type BD201F/203FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in hi-fi equipment delivering an outputof 15 to 15 W into a 4or 8load.ABSOLUTE MAXI
bd202-bd204.pdf
PNP BD202 BD204 NPN BD201 BD203 SILCON EPITAXIAL-BASE POWER TRANSITORS SILCON EPITAXIAL-BASE POWER TRANSITORS The BD202 and BD204 are PNP transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4 or 8 load. NPN complements are BD201 and BD203 ABSOLUTE MAXIMUM RATINGS Symbo
bd202 bd204 bdx78.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD202, BD204, BDX78BD202, BD204, BDX78 PNP PLASTIC POWER TRANSISTORSComplementary BD201, BD203 and BDX77Medium Power Switching and Amplifier ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51
bd204.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD204 DESCRIPTION With TO-220C package Low saturation voltage Complement to type BD203 Wide area of safe operation APPLICATIONS For medium power switching and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum
bd202 bd204.pdf
isc Silicon PNP Power Transistor BD202/204DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD202(BR)CEO-60V(Min)- BD204Complement to Type BD201/203Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in hi-fi equipment delivering an outputof 15 to 15 W into a 4or 8load.ABSOLUTE MAXIMUM RA
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050