Справочник транзисторов. BD246B

 

Биполярный транзистор BD246B - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BD246B
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 80 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO218

 Аналоги (замена) для BD246B

 

 

BD246B Datasheet (PDF)

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bd246 bd246a bd246b bd246c.pdf

BD246B BD246B

isc Silicon PNP Power Transistor BD246/A/B/CDESCRIPTIONCollector Current -I = -10ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD246; -60V(Min)- BD246A(BR)CEO-80V(Min)- BD246B; -100V(Min)- BD246CComplement to Type BD245/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose

 9.1. Size:85K  bourns
bd246-a-b-c.pdf

BD246B BD246B

BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGEBD245 Series (TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maxi

 9.2. Size:91K  power-innovations
bd246.pdf

BD246B BD246B

BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGEBD245 Series(TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector Current 15 A Peak Collector Current 2C Customer-Specified Selections Available3EPin 2 is in

 9.3. Size:210K  inchange semiconductor
bd246 a b c.pdf

BD246B BD246B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION Collector Current -IC= -10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C Complement to Type BD245/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching

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