BD246B Datasheet. Specs and Replacement

Type Designator: BD246B

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO218

 BD246B Substitution

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BD246B datasheet

 ..1. Size:217K  inchange semiconductor

bd246 bd246a bd246b bd246c.pdf pdf_icon

BD246B

isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION Collector Current -I = -10A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD246; -60V(Min)- BD246A (BR)CEO -80V(Min)- BD246B; -100V(Min)- BD246C Complement to Type BD245/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose ... See More ⇒

 9.1. Size:85K  bourns

bd246-a-b-c.pdf pdf_icon

BD246B

BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD245 Series (TOP VIEW) 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current C 2 15 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maxi... See More ⇒

 9.2. Size:91K  power-innovations

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BD246B

BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGE BD245 Series (TOP VIEW) 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current 15 A Peak Collector Current 2 C Customer-Specified Selections Available 3 E Pin 2 is in... See More ⇒

 9.3. Size:210K  inchange semiconductor

bd246 a b c.pdf pdf_icon

BD246B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION Collector Current -IC= -10A Collector-Emitter Breakdown Voltage- V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C Complement to Type BD245/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching... See More ⇒

Detailed specifications: BD245A, BD245B, BD245C, BD245D, BD245E, BD245F, BD246, BD246A, 9014, BD246C, BD246D, BD246E, BD246F, BD249, BD249A, BD249B, BD249C

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