Справочник транзисторов. BD436C

 

Биполярный транзистор BD436C - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BD436C
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 36 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 32 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 250
   Корпус транзистора: TO126

 Аналоги (замена) для BD436C

 

 

BD436C Datasheet (PDF)

 9.1. Size:73K  st
bd433 bd435 bd437 bd434 bd436 bd438.pdf

BD436C
BD436C

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.The BD433 is especially suitable for use in12car-radio output

 9.2. Size:51K  st
bd433 bd434 bd435 bd436 bd437 bd438.pdf

BD436C
BD436C

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.12The BD433 is especially suitable for use in3car

 9.3. Size:160K  st
bd434 bd436 bd438.pdf

BD436C
BD436C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:42K  fairchild semi
bd434 bd436 bd438.pdf

BD436C
BD436C

BD434/436/438Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD434 - 22 V: BD436 - 32 V: BD438 - 45 V VCES Collector-Emitter Voltage:

 9.5. Size:13K  samsung
bd434 bd436 bd438.pdf

BD436C
BD436C

BD434/436/438 PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR AND SWITCHINGAPPLICATIONS Complement to BD433, BD435 and BD437 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit: BD434 Collector Base Voltage VCBO - 22 V: BD436- 32 V: BD438- 45 V: BD434 Collector Emitter Voltage VCES - 22 V: BD436 - 32 V: BD438- 45 V: BD434 Collector

 9.6. Size:58K  onsemi
bd436 bd438 bd440 bd442.pdf

BD436C
BD436C

BD436, BD438, BD440,BD442Plastic Medium PowerSilicon PNP TransistorThis series of plastic, medium-power silicon PNP transistors can beused for for amplifier and switching applications. Complementaryhttp://onsemi.comtypes are BD437 and BD441.4.0 AMP POWERFeaturesTRANSISTORS PNP SILICON Pb-Free Packages are Available*TO-225AAMAXIMUM RATINGS

 9.7. Size:58K  onsemi
bd436g.pdf

BD436C
BD436C

BD436, BD438, BD440,BD442Plastic Medium PowerSilicon PNP TransistorThis series of plastic, medium-power silicon PNP transistors can beused for for amplifier and switching applications. Complementaryhttp://onsemi.comtypes are BD437 and BD441.4.0 AMP POWERFeaturesTRANSISTORS PNP SILICON Pb-Free Packages are Available*TO-225AAMAXIMUM RATINGS

 9.8. Size:41K  onsemi
bd434 bd436 bd438.pdf

BD436C
BD436C

BD434/436/438Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD434 - 22 V: BD436 - 32 V: BD438 - 45 V VCES Collector-Emitter Voltage:

 9.9. Size:130K  cdil
bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf

BD436C
BD436C

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD433 BD434BD435 BD436BD437 BD438BD439 BD440BD441 BD442NPN PNPECTO126 BPlastic PackageIntended for use in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNITBD434 BD436

 9.10. Size:415K  jiangsu
bd434 bd436 bd438.pdf

BD436C
BD436C

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD434 / BD436 / BD438 TRANSISTOR (PNP)TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD433, BD435 And BD437 2. COLLECTOR3. BASE Equivalent Circuit BD434 BD436 BD438 XX XX XXBD434,BD436,BD438=Device code Solid dot = Green moldin

 9.11. Size:179K  lge
bd434 bd436.pdf

BD436C
BD436C

BD434/436(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECOTR 3. BASE 3 21 Features2.5007.400 2.900 Amplifier and switching applications 1.1007.8001.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.9003.0004.100Symbol Parameter Value Units3.20010.600VCBO Collector-Base Voltage BD434 -22 0.000V 11.0000.300BD436 -32 VCEO Collector-

 9.12. Size:145K  shantou-huashan
hbd436.pdf

BD436C
BD436C

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD436 APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector Dissipation

 9.13. Size:119K  shantou-huashan
hsbd436.pdf

BD436C

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD436 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.14. Size:189K  inchange semiconductor
bd436.pdf

BD436C
BD436C

isc Silicon PNP Power Transistor BD436DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = -32V(Min)CEO(SUS)Complement to type BD435Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B

 9.15. Size:118K  inchange semiconductor
bd434 bd436 bd438.pdf

BD436C
BD436C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD434/436/438 DESCRIPTION With TO-126 package Complement to type BD433/435/437 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIO

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History: BD487 | 2SC3568

 

 
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