Биполярный транзистор BD441
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD441
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 36
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 4
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 3
MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора:
TO126
Аналоги (замена) для BD441
BD441
Datasheet (PDF)
..1. Size:106K motorola
bd437 bd441.pdf 
Order this documentMOTOROLAby BD437/DSEMICONDUCTOR TECHNICAL DATABD437BD441Plastic Medium Power SiliconNPN Transistor4.0 AMPERES. . . for amplifier and switching applications. Complementary types are BD438 andPOWER TRANSISTORSBD442.NPN SILICONCASE 7708TO225AA TYPE
..2. Size:69K st
bd439 bd440 bd441 bd442.pdf 
BD439/BD440BD441/BD442COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-baseNPN power transistors in Jedec SOT-32 plasticpackage, intented for use in power linear andswitching applications.The complementary PNP types are BD440, and12BD442 respectively.3SOT-
..3. Size:41K fairchild semi
bd439 bd441.pdf 
BD439/441Medium Power Linear and Switching Applications Complement to BD440, BD442 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD439 60 V: BD441 80 V VCES Collector-Emitter Voltage: BD439 60 V: BD441 80 VVCEO Col
..4. Size:57K samsung
bd439 bd441.pdf 
BD439/441 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR AND SWITCHINGTO-126APPLICATIONS Complement to BD440, BD442 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD439 VCBO 60 V: BD441 80 V Collector Emitter Voltage : BD439 VCES 60 V: BD441 80 V Collector Emitter Voltage : BD439 VCEO 60 V1. Emitter 2.Collector 3.Ba
..5. Size:59K onsemi
bd435 bd437 bd439 bd441.pdf 
BD435, BD437, BD439,BD441Plastic Medium PowerSilicon NPN TransistorThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications. Complementary typeshttp://onsemi.comare BD438 and BD442.4.0 AMPERESFeaturesPOWER TRANSISTORS Pb-Free Packages are Available*NPN SILICONMAXIMUM RATI
..6. Size:130K cdil
bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD433 BD434BD435 BD436BD437 BD438BD439 BD440BD441 BD442NPN PNPECTO126 BPlastic PackageIntended for use in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNITBD434 BD436
..7. Size:2715K jiangsu
bd439 bd441.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD439 / BD441 TRANSISTOR (NPN)TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD440, BD4422. COLLECTOR3. BASE Equivalent Circuit BD439,BD441 o Solid dot = Green molding compound device, if none, the normal device BD439 BD441
..8. Size:184K lge
bd439 bd441.pdf 
BD439/441(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Amplifier and switching applications 2.5007.4002.9001.1007.8001.500MAXIMUM RATINGS(TA=25 unless otherwise noted) 3.900Symbol Parameter Value Units3.000 4.1003.200VCBO Collector-Base Voltage BD439 60 10.600V 0.00011.000BD441 80 0.300VCEO Collector-Em
..9. Size:187K inchange semiconductor
bd441.pdf 
isc Silicon NPN Power Transistor BD441DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = 80V(Min)CEO(SUS)Complement to type BD442Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
..10. Size:117K inchange semiconductor
bd439 bd441.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD439 BD441 DESCRIPTION With TO-126 package Complement to type BD440,BD442 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS V
0.1. Size:76K onsemi
bd435g bd437g bd439g bd441g.pdf 
BD435G, BD437G, BD439G,BD441GPlastic Medium-PowerSilicon NPN TransistorsThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications.http://onsemi.comFeatures4.0 AMPERES Complementary Types are BD438 and BD442POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*NPN SILICONMAXIMUM RATINGSCOLLECTOR
0.2. Size:60K onsemi
bd441g.pdf 
BD435, BD437, BD439,BD441Plastic Medium PowerSilicon NPN TransistorThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications. Complementary typeshttp://onsemi.comare BD438 and BD442.4.0 AMPERESFeaturesPOWER TRANSISTORS Pb-Free Packages are Available*NPN SILICONMAXIMUM RATI
0.3. Size:250K shantou-huashan
hsbd441.pdf 
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD441 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25
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