BD533 BD535 BD537BD534 BD536Complementary power transistors.Features BD533, BD535, and BD537 are NPN transistorsDescription3The devices are manufactured in Planar 21technology with Base Island layout. The resulting transistor shows exceptional high gain TO-220performance coupled with very low saturation voltage. The PNP types are BD534 and BD536.Figure

BD533FPBD534FPCOMPLEMENTARY SILICON POWER TRANSISTORS BD534FP IS SGS-THOMSON PREFERREDSALESTYPE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)DESCRIPTIONThe BD533FP is silicon epitaxial-base NPNpower transistor in Jedec TO-220FP fully moldedisolated package, intented for use in medium32power linear and switching applications.1The complementary P

BD533/5/7BD534/6/8COMPLEMENTARY SILICON POWER TRANSISTORS BD534, BD535, BD536, BD537 AND BD538ARE SGS-THOMSON PREFERREDSALESTYPESDESCRIPTIONThe BD533, BD535, and BD537 are siliconepitaxial-base NPN power transistors in JedecTO-220 plastic package, intented for use inmedium power linear and switching applications.32The complementary PNP types are BD534,1BD536, and B

BD533/535/537Medium Power Linear and Switching Applications Low Saturation Voltage Complement to BD534, BD536 and BD538 respectivelyTO-2201NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD533 45 V : BD535 60 V : BD537 80 V VCES Collect

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD533, BD535, BD537BD534, BD536, BD538BD533, 535, 537 NPN PLASTIC POWER TRANSISTORSBD534, 536, 538 PNP PLASTIC POWER TRANSISTORSMedium Power Linear and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD533/535/537 DESCRIPTION With TO-220C package Complement to type BD534/536/538 Low saturation voltage APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25

isc Silicon NPN Power Transistor BD533DESCRIPTIONDC Current Gain -: h = 40@ I = 0.5AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)CEO(SUS)Complement to Type BD534Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =2