Биполярный транзистор BD536K - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD536K
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO220
BD536K Datasheet (PDF)
bd533 bd534 bd535 bd536 bd537.pdf
BD533 BD535 BD537BD534 BD536Complementary power transistors.Features BD533, BD535, and BD537 are NPN transistorsDescription3The devices are manufactured in Planar 21technology with Base Island layout. The resulting transistor shows exceptional high gain TO-220performance coupled with very low saturation voltage. The PNP types are BD534 and BD536.Figure
bd533 bd534 bd535 bd536 bd537 bd538.pdf
BD533/5/7BD534/6/8COMPLEMENTARY SILICON POWER TRANSISTORS BD534, BD535, BD536, BD537 AND BD538ARE SGS-THOMSON PREFERREDSALESTYPESDESCRIPTIONThe BD533, BD535, and BD537 are siliconepitaxial-base NPN power transistors in JedecTO-220 plastic package, intented for use inmedium power linear and switching applications.32The complementary PNP types are BD534,1BD536, and B
bd534 bd536 bd538.pdf
BD534/536/538Medium Power Linear and Switching Applications Low Saturation Voltage Complement to BD533, BD535 and BD537 respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD534 - 45 V : BD536 - 60 V : BD538 - 80 VVCEO C
bd533 bd534 bd535 bd536 bd537 bd538.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD533, BD535, BD537BD534, BD536, BD538BD533, 535, 537 NPN PLASTIC POWER TRANSISTORSBD534, 536, 538 PNP PLASTIC POWER TRANSISTORSMedium Power Linear and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.
bd534 bd536 bd538.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD534/536/538 DESCRIPTION With TO-220C package Complement to type BD533/535/537 Low saturation voltage APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25
bd536.pdf
isc Silicon PNP Power Transistor BD536DESCRIPTIONDC Current Gain -: h = 40@ I = -0.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type BD535Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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