BD540 - параметры, поиск аналогов, даташиты транзистора

BD540 Datasheet (PDF)

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BD540, BD540A, BD540B, BD540CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD539 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1C 2 Customer-Specified Selections AvailableE 3Pin 2 is in electrical contact with the moun

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isc Silicon PNP Power Transistor BD540DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOComplement to Type BD539Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING

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BD540, BD540A, BD540B, BD540CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD539 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1 Customer-Specified Selections AvailableC 2E 3Pin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum ratings at 25C case temperatu

0.2. Size:193K inchange semiconductor
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isc Silicon PNP Power Transistor BD540ADESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOComplement to Type BD539AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATI