BD650 - аналоги, даташиты, параметры транзистора

BD650 Datasheet (PDF)

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isc Silicon PNP Darlington Power Transistor BD650 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output

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SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD650F DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD649F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stag

Другие транзисторы... BD646 , BD646F , BD647 , BD647F , BD648 , BD648F , BD649 , BD649F , BC548 , BD650F , BD651 , BD651F , BD652 , BD652F , BD661 , BD661K , BD662 .