BD650 - параметры, поиск аналогов, даташиты транзистора

BD650 Datasheet (PDF)

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isc Silicon PNP Darlington Power Transistor BD650DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CLow Saturation VoltageComplement to Type BD649Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull output

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SEMICONDUCTORSBD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

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INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BD650FDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current GainLow Saturation VoltageComplement to Type BD649FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstag

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