BD650 Datasheet. Specs and Replacement

Type Designator: BD650  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 62 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

 BD650 Substitution

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BD650 datasheet

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BD650

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 ..2. Size:195K  inchange semiconductor

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BD650

isc Silicon PNP Darlington Power Transistor BD650 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output ... See More ⇒

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BD650

SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒

 0.2. Size:214K  inchange semiconductor

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BD650

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD650F DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD649F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stag... See More ⇒

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Detailed specifications: BD646, BD646F, BD647, BD647F, BD648, BD648F, BD649, BD649F, BC548, BD650F, BD651, BD651F, BD652, BD652F, BD661, BD661K, BD662

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