Биполярный транзистор BD751 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD751
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 200 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
BD751 Datasheet (PDF)
bd751 bd751a.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors BD751/751ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 90V(Min)- BD751CEO(SUS)= 120V(Min)- BD751AHigh Power DissipationComplement to Type BD750/750AAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
bd751 bd751a .pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SY
bd751 bd751a.pdf
isc Silicon NPN Power Transistors BD751/751ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 90V(Min)- BD751CEO(SUS)= 120V(Min)- BD751AHigh Power DissipationComplement to Type BD750/750AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MAXI
bd751b bd751c.pdf
isc Silicon NPN Power Transistors BD751B/751CDESCRIPTION Collector-Emitter Sustaining Voltage-: V = 100V(Min)- BD751BCEO(SUS)= 130V(Min)- BD751CHigh Power DissipationComplement to Type BD750B/750CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE
bd751b bd751c .pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: BD351B
