All Transistors. BD751 Datasheet

 

BD751 Datasheet and Replacement


   Type Designator: BD751
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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BD751 Datasheet (PDF)

 ..1. Size:165K  cn sptech
 bd751 bd751a.pdf pdf_icon

BD751

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors BD751/751ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 90V(Min)- BD751CEO(SUS)= 120V(Min)- BD751AHigh Power DissipationComplement to Type BD750/750AAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 ..2. Size:113K  inchange semiconductor
 bd751 bd751a .pdf pdf_icon

BD751

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SY

 ..3. Size:207K  inchange semiconductor
 bd751 bd751a.pdf pdf_icon

BD751

isc Silicon NPN Power Transistors BD751/751ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 90V(Min)- BD751CEO(SUS)= 120V(Min)- BD751AHigh Power DissipationComplement to Type BD750/750AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MAXI

 0.1. Size:207K  inchange semiconductor
 bd751b bd751c.pdf pdf_icon

BD751

isc Silicon NPN Power Transistors BD751B/751CDESCRIPTION Collector-Emitter Sustaining Voltage-: V = 100V(Min)- BD751BCEO(SUS)= 130V(Min)- BD751CHigh Power DissipationComplement to Type BD750B/750CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE

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Datasheet: BD746C , BD746D , BD746E , BD746F , BD750 , BD750A , BD750B , BD750C , 2SA1943 , BD751A , BD751B , BD751C , BD775 , BD776 , BD777 , BD778 , BD779 .

History: ISB1035AS1 | MA1706 | 2SB1030 | 2SC4493 | GFT31-30 | GES2905A | GF120

Keywords - BD751 transistor datasheet

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