BD751 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD751
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BD751 Transistor Equivalent Substitute - Cross-Reference Search
BD751 Datasheet (PDF)
bd751 bd751a.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors BD751/751ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 90V(Min)- BD751CEO(SUS)= 120V(Min)- BD751AHigh Power DissipationComplement to Type BD750/750AAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
bd751 bd751a .pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SY
bd751 bd751a.pdf
isc Silicon NPN Power Transistors BD751/751ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 90V(Min)- BD751CEO(SUS)= 120V(Min)- BD751AHigh Power DissipationComplement to Type BD750/750AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MAXI
bd751b bd751c.pdf
isc Silicon NPN Power Transistors BD751B/751CDESCRIPTION Collector-Emitter Sustaining Voltage-: V = 100V(Min)- BD751BCEO(SUS)= 130V(Min)- BD751CHigh Power DissipationComplement to Type BD750B/750CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE
bd751b bd751c .pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 40878
