BD788 - Даташиты. Аналоги. Основные параметры

Order this document MOTOROLA by BD787/D SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP Complementary Plastic Silicon BD788 Power Transistors . . . designed for lower power audio amplifier and low current, high speed switching applications. 4 AMPERE Low Collector Emitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) 60 Vdc (Min) BD787, BD788 COMPLEMENTARY High C

BD787 - NPN, BD788 - PNP Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high-speed switching applications. Features http //onsemi.com Low Collector-Emitter Sustaining Voltage - VCEO(sus) 60 Vdc (Min) 4 AMPERES High Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc POWER TRANSISTORS

isc Silicon PNP Power Transistor BD788 DESCRIPTION DC Current Gain- h = 40 250(Min)@ I = -0.2A FE C Collector-Emitter Sustaining Voltage - V = -60V(Min) CEO(SUS) Complement to type BD787 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier and low current, high-speed switching applicatio

BD787G (NPN), BD788G (PNP) Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high-speed switching applications. http //onsemi.com Features 4 AMPERES Low Collector-Emitter Sustaining Voltage POWER TRANSISTORS High Current-Gain - Bandwidth Product COMPLEMENTARY SILICON These Devices are Pb-Free and