DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N2905; 2N2905APNP switching transistors1997 May 28Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP switching transistors 2N2905; 2N2905AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max.

2N2905A2N2907ASMALL SIGNAL PNP TRANSISTORSDESCRIPTION The 2N2905A and 2N2907A are silicon PlanarEpitaxial PNP transistors in Jedec TO-39 (for2N2905A) and in Jedec TO-18 (for 2N2907A)metal case. They are designed for high speedsaturated switching and general purposeapplications.TO-18 TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit

MCCTMMicro Commercial ComponentsOrdering Information : Device Packing Part Number-BP Bulk;50pcs/Box ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any

2N2904(A) and 2N2905(A) Qualified Levels: PNP SWITCHING SILICON JAN, JANTX, JANTXV Available on TRANSISTOR and JANS commercial versions Qualified per MIL-PRF-19500/290 DESCRIPTION This family of 2N2904 and 2N2905A switching transistors are military qualified up to the JANS level for high-reliability applications. These devices are also available in a TO-5 package. Mic

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2905ACSM Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Vol

2N2904/2N29052N2906/2N2907GENERAL PURPOSE AMPLIFIERS AND SWITCHESDESCRIPTIONThe 2N2904, 2N2905, 2N2906 and 2N2907 are si-licon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904, 2N2905) and in Jedec TO-18 (for2N2906 and 2N2907) metal cases. They are desi-gned for high-speed saturated switching and gene-ral purpose applications.2N2904/2N2905 approved to CECC 50002-

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SILICON PNP TRANSISTORDESCRIPTION:The 2N2905A is Designed forPACKAGE STYLE TO- 39General Purpose Amplifier andSwitching ApplicationsMAXIMUM RATINGSI 600 mAV -60 VP 3.0 W @ T = 25 CT -65 C to +200 C1= E I ER 2 = BASET -65 C to +200 C3 = C LLEC R 58 C/W 1. Y CHARACTERISTICS = 25 CSYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITSBVCEO I = 1